scholarly journals Development of epitaxial PbS layers obtaining method for photoelectric transducers

2021 ◽  
Vol 2086 (1) ◽  
pp. 012045
Author(s):  
T O Zinchenko ◽  
E A Pecherskaya ◽  
A V Volik ◽  
O A Timohina ◽  
V S Alexandrov ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Theoretical Model ◽  
Semiconductor Device ◽  
Electrical Energy ◽  
Technological Parameters ◽  
Thermal Expansion Coefficients ◽  
Technological Cycle ◽  
Expansion Coefficients ◽  
Photonic Energy

Abstract Photoelectric transducers are a semiconductor device that converts photonic energy into electrical energy. This paper describes obtained by the hotwall epitaxy method epitaxial PbS layers technology. Materials, methods, technological parameters of synthesis were selected and substantiated. A theoretical model of the p-n transition has been developed. The calculation of the main parameters has been done. The hotwall epitaxy method was chosen for the synthesis, because it allows to obtain layers with required properties in a single technological cycle with an economical consumption of material. BaF2 was chosen as the substrate, because in this case a smaller difference in the identity periods and the layer and the substrate thermal expansion coefficients is achieved.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Influence of Cr deficiency on sintering, thermal expansion and electrical properties of La0.75Sr0.25Cr1−xO3−δ as a SOFC interconnect material

2016 ◽  
Vol 30 (11) ◽  
pp. 1650127 ◽  
Author(s):  
Yi Ren ◽  
Wen Ma ◽  
Xiaoying Li ◽  
Jun Wang ◽  
Yu Bai ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Ignition Process ◽  
Thermal Expansion Coefficients ◽  
Auto Ignition ◽  
Pure Perovskite Phase ◽  
Maximum Conductivity ◽  
Expansion Coefficients ◽  
Interconnect Material

The SOFC interconnect materials La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] [Formula: see text]–[Formula: see text] were prepared using an auto-ignition process. The influences of Cr deficiency on their sintering, thermal expansion and electrical properties were investigated. All the samples were pure perovskite phase after sintering at 1400[Formula: see text]C for 4 h. The cell volume of La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] decreased with increasing Cr deficient content. The relative density of the sintered bulk samples increased from 93.2% [Formula: see text] to a maximum value of 94.7% [Formula: see text] and then decreased to 87.7% [Formula: see text]. The thermal expansion coefficients of the sintered bulk samples were in the range of [Formula: see text]–[Formula: see text] (30–1000[Formula: see text]C), which are compatible with that of YSZ. Among the investigated samples, the sample with 0.02 Cr deficiency had a maximum conductivity of 40.4 Scm[Formula: see text] and the lowest Seebeck coefficient of 154.8 [Formula: see text]VK[Formula: see text] at 850[Formula: see text]C in pure He. The experimental results indicate that La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] has the best properties and is much suitable for SOFC interconnect material application.

Novel Silicon-Elastomers for Advanced Soft Lithography

2006 ◽  
Vol 947 ◽  
Author(s):  
Kyung Choi
Keyword(s):  
Thermal Expansion ◽  
High Resolution ◽  
Soft Lithography ◽  
Materials Properties ◽  
Nano Scale ◽  
Thermal Expansion Coefficients ◽  
High Thermal Expansion ◽  
Expansion Coefficients

ABSTRACTHigh resolution pattern transfers in the nano-scale regime have been considerable challenges in ‘soft lithography’ to achieve nanodevices with enhanced performances. In this technology, the resolution of pattern integrations is significantly rely on the materials' properties of polydimethylsiloxane (PDMS) stamps. Since commercial PDMS stamps have shown limitations in nano-scale resolution soft lithography due to their low physical toughness and high thermal expansion coefficients, we developed stiffer, photocured PDMS silicon elastomers designed, specifically for nano-sized soft lithography and photopatternable nanofabrications.

Thermal expansion coefficients of NH4ReO4and NH4IO4down to 58 K

1985 ◽  
Vol 82 (3) ◽  
pp. 1611-1612 ◽  
Author(s):  
Stanley L. Segel ◽  
H. Karlsson ◽  
T. Gustavson ◽  
K. Edstrom
Keyword(s):  
Thermal Expansion ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

scholarly journals Organizing Cells Within Non-Periodic Microarchitectured Materials That Achieve Graded Thermal Expansions

2015 ◽  
Author(s):  
Jonathan B. Hopkins ◽  
Lucas A. Shaw ◽  
Todd H. Weisgraber ◽  
George R. Farquar ◽  
Christopher D. Harvey ◽  
...  
Keyword(s):  
Finite Element Analysis ◽  
Thermal Expansion ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Element Analysis ◽  
Thermal Expansion Coefficients ◽  
Large Lattice ◽  
Unit Cells ◽  
Expansion Coefficients ◽  
Bulk Behavior

The aim of this paper is to introduce an approach for optimally organizing a variety of different unit cell designs within a large lattice such that the bulk behavior of the lattice exhibits a desired Young’s modulus with a graded change in thermal expansion over its geometry. This lattice, called a graded microarchitectured material, can be sandwiched between two other materials with different thermal expansion coefficients to accommodate their different expansions or contractions caused by changing temperature while achieving a desired uniform stiffness. First, this paper provides the theory necessary to calculate the thermal expansion and Young’s modulus of large multi-material lattices that consist of periodic (i.e., repeating) unit cells of the same design. Then it introduces the theory for calculating the graded thermal expansions of a large multimaterial lattice that consists of non-periodic unit cells of different designs. An approach is then provided for optimally designing and organizing different unit cells within a lattice such that both of its ends achieve the same thermal expansion as the two materials between which the lattice is sandwiched. A MATLAB tool is used to generate images of the undeformed and deformed lattices to verify their behavior and various examples are provided as case studies. The theory provided is also verified and validated using finite element analysis and experimentation.

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