scholarly journals Characteristic properties of Planacon MCP-PMTs

2021 ◽  
Vol 16 (12) ◽  
pp. P12032
Author(s):  
Y.A. Melikyan ◽  
M. Slupecki ◽  
I.G. Bearden ◽  
J.R. Crowley ◽  
D.A. Finogeev ◽  
...  
Keyword(s):  
Count Rate ◽  
Low Voltage ◽  
Detection Efficiency ◽  
Systematic Investigation ◽  
Anode Current ◽  
Dark Count ◽  
Electron Multiplication ◽  
Noise Characteristics ◽  
Microchannel Plates ◽  
Over Time

Abstract A systematic investigation of Planacon MCP-PMTs was performed using 64 XP85002/ FIT-Q photosensors. These devices are equipped with microchannel plates of reduced resistance. Results of a study of their gain stability over time and saturation level in terms of the average anode current are presented. This information allows one to determine the lower limit of the MCP resistance for stable Planacon operation. The spread of the electron multiplication characteristics for the entire production batch is also presented, indicating the remarkably low voltage requirements of these MCP-PMTs. Detection efficiency and noise characteristics, such as dark count rate and afterpulsing level, are also reviewed.

Collection and counting efficiency

2017 ◽  
Author(s):  
A. G. Wright
Keyword(s):  
Quantum Efficiency ◽  
Standard Method ◽  
Shot Noise ◽  
Count Rate ◽  
Detection Efficiency ◽  
Collection Efficiency ◽  
Counting Efficiency ◽  
Single Electron ◽  
Anode Current ◽  
Secondary Electrons

Standards laboratories can provide a photocathode calibration for quantum efficiency, as a function of wavelength, but their measurements are performed with the photomultiplier operating as a photodiode. Each photoelectron released makes a contribution to the photocathode current but, if it is lost or fails to create secondary electrons at d1, it makes no contribution to anode current. This is the basis of collection efficiency, F. The anode detection efficiency, ε‎, allied to F, refers to the counting efficiency of output pulses. The standard method for determining F involves photocurrent, anode current, count rate, and the use of highly attenuating filters; F may also be measured using methods based on single-electron responses (SERs), shot noise, or the SER at the first dynode.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

Measurements and Simulations of Low Dark Count Rate Single Photon Avalanche Diode Device in a Low Voltage 180-nm CMOS Image Sensor Technology

2013 ◽  
Vol 60 (6) ◽  
pp. 1982-1988 ◽  
Author(s):  
Tomer Leitner ◽  
Amos Feiningstein ◽  
Renato Turchetta ◽  
Rebecca Coath ◽  
Steven Chick ◽  
...  
Keyword(s):  
Count Rate ◽  
Low Voltage ◽  
Single Photon ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Technology ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

scholarly journals InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

2016 ◽  
Vol 3 (3) ◽  
pp. 150584 ◽  
Author(s):  
Xiao Meng ◽  
Shiyu Xie ◽  
Xinxin Zhou ◽  
Niccolò Calandri ◽  
Mirko Sanzaro ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Timing Jitter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Absorption Region ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8  Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

scholarly journals Design of a Real-Time Breakdown Voltage and On-Chip Temperature Monitoring System for Single Photon Avalanche Diodes

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 25
Author(s):  
Shijie Deng ◽  
Alan P. Morrison ◽  
Yong Guo ◽  
Chuanxin Teng ◽  
Ming Chen ◽  
...  
Keyword(s):  
Real Time ◽  
Breakdown Voltage ◽  
Count Rate ◽  
Single Photon ◽  
Photon Counting ◽  
Temperature Monitoring ◽  
Dark Count ◽  
Chip Temperature ◽  
Avalanche Diodes ◽  
On Chip

The design and implementation of a real-time breakdown voltage and on-chip temperature monitoring system for single photon avalanche diodes (SPADs) is described in this work. In the system, an on-chip shaded (active area of the detector covered by a metal layer) SPAD is used to provide a dark count rate for the breakdown voltage and temperature calculation. A bias circuit was designed to provide a bias voltage scanning for the shaded SPAD. A microcontroller records the pulses from the anode of the shaded SPAD and calculates its real-time dark count rate. An algorithm was developed for the microcontroller to calculate the SPAD’s breakdown voltage and the on-chip temperature in real time. Experimental results show that the system is capable of measuring the SPAD’s breakdown voltage with a mismatch of less than 1.2%. Results also show that the system can provide real-time on-chip temperature monitoring for the range of −10 to 50 °C with errors of less than 1.7 °C. The system proposed can be used for the real-time SPAD’s breakdown voltage and temperature estimation for dual-SPADs or SPAD arrays chip where identical detectors are fabricated on the same chip and one or more dummy SPADs are shaded. With the breakdown voltage and the on-chip temperature monitoring, intelligent control logic can be developed to optimize the performance of the SPAD-based photon counting system by adjusting the parameters such as excess bias voltage and dead-time. This is particularly useful for SPAD photon counting systems used in complex working environments such as the applications in 3D LIDAR imaging for geodesy, geology, geomorphology, forestry, atmospheric physics and autonomous vehicles.

Sign in / Sign up

Export Citation Format

Share Document