scholarly journals Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

2016 ◽  
Vol 3 (7) ◽  
pp. 075021 ◽  
Author(s):  
Martin Birkett ◽  
Roger Penlington
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Dc Magnetron Sputtering

Ageing effects on electrical resistivity of Nb-doped TiO2 thin films deposited at a high rate by reactive DC magnetron sputtering

2018 ◽  
Vol 455 ◽  
pp. 267-275 ◽  
Author(s):  
Davide Casotti ◽  
Valentina Orsini ◽  
Alessandro di Bona ◽  
Sandra Gardonio ◽  
Mattia Fanetti ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
High Rate ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Ageing Effects

scholarly journals Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

2017 ◽  
Vol 35 (1) ◽  
pp. 173-180 ◽  
Author(s):  
A. Kavitha ◽  
R. Kannan ◽  
S. Rajashabala
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Dc Magnetron Sputtering ◽  
Target Power ◽  
Reactive Gases ◽  
Hot Filament ◽  
Diode Mode

AbstractThe present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).

TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties

2020 ◽  
Vol 163 ◽  
pp. 110293 ◽  
Author(s):  
Heiddy P. Quiroz ◽  
M. Manso-Silván ◽  
A. Dussan ◽  
Carlos Busó-Rogero ◽  
P. Prieto ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Multilayer Thin Films ◽  
Interface Properties ◽  
Dc Magnetron Sputtering

ELECTRICAL CHARACTERIZATION OF EPITAXIAL BI:2201

2002 ◽  
Vol 16 (04) ◽  
pp. 127-133 ◽  
Author(s):  
A. V. POP ◽  
G. ILONCA ◽  
MARIANA POP ◽  
R. DELTOUR
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Normal State ◽  
Electrical Resistance ◽  
Electrical Characterization ◽  
Dc Magnetron Sputtering ◽  
Normal State Resistivity ◽  
Partial Pressures

Bi2.1Sr1.9CuOy thin films (Bi:2201) were deposited onto heated single crystal (100) MgO substrates using inverted cylindrical DC magnetron sputtering with different partial pressures of oxygen in a sputtering gas. The behavior of the normal state resistivity function of temperature is strongly influenced by the composition of sputtering gas used in thin films synthesis. Near the transition to the superconducting state, electrical resistivity changes strongly from "metallic" to insulator (MI). The origin for the increase of electrical resistance was analyzed using some models for the localization of mobile carriers. A good linearity is obtained for ln R as a function of Tα for α = 1/10 and for R as a function of ln T. The last behavior agrees with the pinning and fragmentation of 1D stripes in CuO2 planes.

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

NANO-INDENTER MECHANICAL PROPERTIES OF ITO/GLASS THIN FILM DEPOSITED BY DC MAGNETRON SPUTTERING METHOD AT LOW TEMPERATURE

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4322-4327
Author(s):  
HAN-KI YOON ◽  
DO HYOUNG KIM ◽  
DO HOON SHIN ◽  
RI-ICHI MURAKAMI
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Optical Transmittance ◽  
Experimental Result ◽  
Dc Magnetron Sputtering ◽  
Ito Film ◽  
Ito Glass ◽  
Sputtering Pressure ◽  
Ito Films

The ITO film was deposited onto the glass substrate at room temperature by the inclination opposite target type DC magnetron sputtering equipment. An indium tin alloy ( In 2 O 3(90 wt %)+ SnO 2(10 wt %)) target was used. The Total sputtering pressure was varied from 2.6×10-1 to 8.3×10-1 Pa . The experimental result showed that the ITO film produced at room temperature had microstructure in which a X-ray diffraction peak is not clear, regardless of the total sputtering pressure. All the films showed a high optical transmittance. The ITO films prepared at low pressures gave low electrical resistivity. The elastic modulus and hardness of ITO films on various total sputtering pressures were increased with decreasing the total sputtering pressure and this tendency was similar to the change in electrical resistivity with decreasing the total sputtering pressure.

Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79383-79388 ◽  
Author(s):  
H. Y. Xu ◽  
Y. H. Huang ◽  
S. Liu ◽  
K. W. Xu ◽  
F. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Vo2 Thin Films

VO2 thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.

Room-Temperature Deposition of ZnO Thin Films by Using DC Magnetron Sputtering

2014 ◽  
Vol 896 ◽  
pp. 237-240 ◽  
Author(s):  
Putut Marwoto ◽  
Sulhadi ◽  
Sugianto ◽  
Didik Aryanto ◽  
Edy Wibowo ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Film Growth ◽  
Transparent Conductive Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Plasma Power ◽  
Zno Film ◽  
Dc Magnetron Sputtering

ZnO thin films have successfully been deposited using DC magnetron sputtering at room temperature by means of plasma power variation. XRD results show that films were grown at a plasma power of 30 W and 40 W are polycrystalline, while at 20 W is considered as amorphous. The optical bandgap of films are shrinkage by increasing the plasma power. The broadest transmittance range is belongs to ZnO film growth at plasma power of 40 W. The electrical conductivity of ZnO films increase from 4.02x10-7(Ωcm)-1to 8.92x10-7(Ωcm)-1once the plasma power is increased. Based on the electrical and optical properties of the films it clearly be seen that ZnO film grown at plasma power of 40 W has highest transmittance and lower electrical resistivity therefore it appropriate for transparent conductive oxide (TCO).

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