scholarly journals High performance room temperature p-type injection in few-layered tungsten diselenide films from cobalt and palladium contacts

2019 ◽  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Tungsten Diselenide ◽  
P Type

scholarly journals High performance p-channel transistors on flexible substrate using direct roll transfer stamping

2021 ◽  
Author(s):  
Ayoub Abdulhafith Sadek Zumeit ◽  
Abhishek S Dahiya ◽  
Adamos Christou ◽  
Ravinder Dahiya
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Electronic Devices ◽  
Silicon On Insulator ◽  
Flexible Substrates ◽  
Device Performance ◽  
Mechanical Bending ◽  
P Type

Abstract lexible electronics with high-performance devices is crucial for transformative advances in several emerging and traditional applications. To address this need, herein we present p-type silicon (Si) nanoribbons (NR)-based high-performance field-effect transistors (FETs) developed using innovative Direct Roll Transfer Stamping (DRTS) process. First, ultrathin Si NRs (~70 nm) are obtained from silicon on insulator (SOI) wafers using conventional top-down method, and then DRTS method is employed to directly place the NRs onto flexible substrates at room temperature (RT). The NRFETs are then developed following RT fabrication process which include deposition of high-quality SiNx dielectric. The fabricated p-channel transistors demonstrate high linear mobility ~100±10 cm2/Vs, current on/off ratio >10^4, and low gate leakage (<1nA). Further, the transistors showed robust device performance under mechanical bending and at wide temperature range (15 to 90 °C), showing excellent potential for futuristic high-performance flexible electronic devices/circuits.

High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

2018 ◽  
Author(s):  
Sotirios Christodoulou ◽  
Francesco Di Stasio ◽  
Santanu Pradhan ◽  
Inigo Ramiro ◽  
Yu Bi ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals

High performance 0.25 [micro sign]m p-type Ge/SiGe MODFETs

1998 ◽  
Vol 34 (19) ◽  
pp. 1888 ◽  
Author(s):  
G. Höck ◽  
T. Hackbarth ◽  
U. Erben ◽  
E. Kohn ◽  
U. König
Keyword(s):  
High Performance ◽  
P Type

P-type Co3O4 nanoarrays decorated on the surface of n-type flower-like WO3 nanosheets for high-performance gas sensing

2019 ◽  
Vol 288 ◽  
pp. 104-112 ◽  
Author(s):  
Yanghai Gui ◽  
Lele Yang ◽  
Kuan Tian ◽  
Hongzhong Zhang ◽  
Shaoming Fang
Keyword(s):  
High Performance ◽  
Gas Sensing ◽  
P Type ◽  
Co3o4 Nanoarrays

Star-shaped arylacetylene resins derived from silicon

2020 ◽  
Vol 40 (8) ◽  
pp. 676-684
Author(s):  
Niping Dai ◽  
Junkun Tang ◽  
Manping Ma ◽  
Xiaotian Liu ◽  
Chuan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Mechanical Test ◽  
Flexural Modulus ◽  
Mechanical Analysis ◽  
Reinforced Composites ◽  
Scanning Calorimetry ◽  
Chemical Structures ◽  
Structures And Properties ◽  
High Performance Resin

AbstractStar-shaped arylacetylene resins, tris(3-ethynyl-phenylethynyl)methylsilane, tris(3-ethynyl-phenylethynyl) phenylsilane, and tris (3-ethynyl-phenylethynyl) silane (TEPHS), were synthesized through Grignard reaction between 1,3-diethynylbenzene and three types of trichlorinated silanes. The chemical structures and properties of the resins were characterized by means of nuclear magnetic resonance, fourier-transform infrared spectroscopy, Haake torque rheomoter, differential scanning calorimetry, dynamic mechanical analysis, mechanical test, and thermogravimetric analysis. The results show that the melt viscosity at 120 °C is lower than 150 mPa⋅s, and the processing windows are as wide as 60 °C for the resins. The resins cure at the temperature as low as 150 °C. The good processabilities make the resins to be suitable for resin transfer molding. The cured resins exhibit high flexural modulus and excellent heat-resistance. The flexural modulus of the cured TEPHS at room temperature arrives at as high as 10.9 GPa. Its temperature of 5% weight loss (Td5) is up to 697 °C in nitrogen. The resins show the potential for application in fiber-reinforced composites as high-performance resin in the field of aviation and aerospace.

scholarly journals Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1692
Author(s):  
Emmanuel K. Ampadu ◽  
Jungdong Kim ◽  
Eunsoon Oh
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Photovoltaic Device ◽  
Photovoltaic Devices ◽  
Temperature Spectrum ◽  
Terahertz Region ◽  
Room Temperature Spectrum ◽  
Ftir Spectrometer ◽  
Titanium Substrates ◽  
Deposition Conditions

We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.

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