An enzymic creatinine assay and a direct ammonia assay in coated thin films.

1983 ◽  
Vol 29 (4) ◽  
pp. 645-649 ◽  
Author(s):  
M W Sundberg ◽  
R W Becker ◽  
T W Esders ◽  
J Figueras ◽  
C T Goodhue
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Linear Regression ◽  
Accurate Determination ◽  
Bromphenol Blue ◽  
Keto Acids ◽  
Liquid Chromatographic ◽  
Enzymic Assay ◽  
Paired Analysis

Abstract We developed a thin-film enzymic assay for creatinine that makes use of creatinine iminohydrolase (EC 3.5.4.21) to convert creatinine to N-methylhydantoin and ammonia. The ammonia diffuses through a semipermeable layer and is quantitated by reaction with bromphenol blue. A paired analysis of the sample on a separate coating without the enzymic reaction measures endogenous ammonia and, for samples with normal concentrations of ammonia, allows accurate determination of serum creatinine to 150 mg/L without dilution. Results of this assay (y) compare well with those by a liquid-chromatographic comparison assay (x) by linear regression (slope = 0.935, intercept = 1.13 mg/L, r2 = 0.995). It is insensitive to many substances, such as ketones and keto acids, that interfere with conventional assays. Results of the ammonia assay (y) correlate well with those by a semi-automated enzymic assay (x) based on glutamate dehydrogenase (slope = 1.068, intercept = 17.3 mumol/L, r2 = 0.985).

Analyzing TEM Images for Accurate Determination of Lattice Parameters of Vacuum Evaporated SnSe Thin Film by Image Processing Software

2016 ◽  
Vol 1141 ◽  
pp. 51-53
Author(s):  
Chetan Zankat ◽  
V.M. Pathak ◽  
Pratik Pataniya ◽  
G.K. Solanki ◽  
K.D. Patel ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Processing ◽  
Optical Properties ◽  
Room Temperature ◽  
Accurate Determination ◽  
Lattice Parameters ◽  
Processing Software ◽  
Image Processing Software

Amorphous SnSe thin films were deposited by thermal evaporation technique on glass substrates kept at room temperature in a vacuum better than 10-5Torr. A detailed study of structural and optical properties of 150 nm thin film was carried out. The selected area diffraction patterns obtained by TEM for this thin film were analyzed by a new method that involves accurate determination of lattice parameters by image processing software. The obtained results are in good agreement with the JCPDS data. Optical transmission spectra obtained at room temperature were analyzed to study optical properties of deposited thin films. It has been found that indirect carrier transition is responsible for optical absorption process in the deposited thin films.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

Accurate Determination of Optical Constants of Amorphous Absorbing Thin Films by Spectroscopic Ellipsometry

2015 ◽  
Vol 35 (4) ◽  
pp. 0431001 ◽  
Author(s):  
李江 Li Jiang ◽  
李沛 Li Pei ◽  
黄峰 Huang Feng ◽  
魏贤华 Wei Xianhua ◽  
葛芳芳 Ge Fangfang ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Accurate Determination

Determination of the Mechanical Response of Thin Films with X-Rays

1993 ◽  
Vol 308 ◽  
Author(s):  
I. C. Noyan ◽  
G. Sheikh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Response ◽  
Strain Analysis ◽  
Local Strain ◽  
X Rays ◽  
Stress Strain ◽  
X Ray ◽  
The Individual

ABSTRACTThe mechanical response of a specimen incorporating thin films is dictated by a combination of fundamental mechanical parameters such as Young's moduli of the individual layers, and by configurational parameters such as adhesion strength at the interface(s), residual stress distribution and other process dependent factors. In most systems, the overall response will be dominated by the properties of the (much thicker) substrate. Failure within the individual layers, on the other hand, is dependent on the local strain distributions and can not be predicted from the substrate values alone. To better understand the mechanical response of these systems, the strain within the individual layers of the thin film system must be measured and correlated with applied stresses. Phase selectivity of X-ray stress/strain analysis techniques is well suited for this purpose. In this paper, we will review the use of the traditional x-ray stress/strain analysis methods for the determination of the mechanical properties of thin film systems.

Determination of thin film refractive index and thickness by means of film phase thickness

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Milen Nenkov ◽  
Tamara Pencheva
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Barium Titanate ◽  
Spectral Region ◽  
Complex Refractive Index ◽  
Refractive Index Dispersion ◽  
New Approach ◽  
Phase Thickness

AbstractA new approach for determination of refractive index dispersion n(λ) (the real part of the complex refractive index) and thickness d of thin films of negligible absorption and weak dispersion is proposed. The calculation procedure is based on determination of the phase thickness of the film in the spectral region of measured transmittance data. All points of measured spectra are included in the calculations. Barium titanate thin films are investigated in the spectral region 0.38–0.78 μm and their n(λ) and d are calculated. The approach is validated using Swanepoel’s method and it is found to be applicable for relatively thin films when measured transmittance spectra have one minimum and one maximum only.

Modification of some Optical and Mechanical Properties of Amorphous As-S-Se Thin Films by Copper Introduction

2013 ◽  
Vol 856 ◽  
pp. 267-271
Author(s):  
D.D. Štrbac ◽  
G.R. Strbac ◽  
G. Stojanovic ◽  
S.R. Lukic ◽  
D.D. Petrovic
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Absorption Region ◽  
Amorphous Thin Film ◽  
Amorphous Thin Films ◽  
Single Oscillator Model ◽  
Single Oscillator ◽  
Evaporation Technique ◽  
Optical And Mechanical Properties

Abstract. In this research experimental investigation of the influence of copper introduction on some relevant parameters in As-S-Se amorphous thin films is performed. Copper is introduced into As2(S0.5Se0.5)3amorphous thin film in concentration of 3 at.%. Samples of As2(S0.5Se0.5)3and Cu3(As2(S0.5Se0.5)3)97amorphous thin films are prepared by the vacuum thermal evaporation technique from previously synthesized bulk samples. Envelope method is applied for the determination of the optical constants, using the transmission and reflection spectra. The dispersion of the refractive index is discussed in terms of the single oscillator model proposed by Wemple–DiDomenico. Values of absorption coefficients in the high absorption region are discussed according to Tauc's law.Instrumented indentation testing is performed, using the Berkovich geometry indenter, for obtaining the value of nano-hardness.All the determined parameters have shown the increase with introduction of copper into amorphous thin film.

On the application of a single-crystal κ-diffractometer and a CCD area detector for studies of thin films

2013 ◽  
Vol 20 (4) ◽  
pp. 644-647 ◽  
Author(s):  
Henrik Hovde Sønsteby ◽  
Dmitry Chernyshov ◽  
Michael Getz ◽  
Ola Nilsen ◽  
Helmer Fjellvåg
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystal Orientation ◽  
Atomic Layer ◽  
Area Detector ◽  
Layer Deposition ◽  
Crucial Information ◽  
Key Features ◽  
Set Up

A multipurpose six-axis κ-diffractometer, together with the brilliance of the ESRF light source and a CCD area detector, has been explored for studying epitaxial relations and crystallinity in thin film systems. The geometrical flexibility of the six-axis goniometer allows measurement of a large volume in reciprocal space, providing an in-depth understanding of sample crystal relationships. By a set of examples of LaAlO3thin films deposited by the atomic layer deposition technique, the possibilities of the set-up are presented. A fast panoramic scan provides determination of the crystal orientation matrices, prior to more thorough inspection of single Bragg nodes. Such information, in addition to a broadening analysis of families of single reflections, is shown to correlate well with the crystallinity, crystallite size, strain and epitaxial relationships in the thin films. The proposed set-up offers fast and easy sample mounting and alignment, along with crucial information on key features of the thin film structures.

Non-Contact Real-Time Evaluation of Polyimide Thin Film Thermoelastic Properties Through Impulsive Stimulated Thermal Scattering

1992 ◽  
Vol 284 ◽  
Author(s):  
J. A. Rogers ◽  
A. R. Duggal ◽  
K. A. Nelson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Real Time ◽  
Viscoelastic Properties ◽  
Thermoelastic Properties ◽  
Substrate Adhesion ◽  
Thermal Scattering ◽  
Film Substrate ◽  
Time Evaluation

ABSTRACTWe demonstrate a new purely optical based method for the excitation and detection of acoustic and thermal disturbances in thin films. This technique is applied to the determination of the viscoelastic properties of unsupported and silicon supported polyimide thin (∼1 micron) films. We show how this technique can be used to detect film delaminations and suggest how it may be used to probe film-substrate adhesion quality.

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