Noise

2020 ◽  
pp. 551-593
Author(s):  
Sandip Tiwari

This chapter examines noise, another example of cause and chance at work, and an example of the statistical fluctuations in the response arising from random events. Approaches to understanding randomness embedded in signals are discussed along with the notion of ergodic behavior, autocorrelation and the use of the Wiener-Khintchin theorem. Fluctuations and noise in semiconductors are analyzed by exploring charge transport between plates under scattering. The quantum and thermodynamic links at resonance are emphasized. The Nyquist relationship, a very general relationship, is derived. Partition thermal noise under limited channels is explored, and shot noise is discussed. Low frequency noise arising as random telegraph noise due to charge trapping and detrapping is analyzed. Noise in a parameter—resistance, for example—can be due to multiple interactions. An example of this is resistance fluctuation due to mobility and carrier fluctuations, which in many materials can be parameterized through the Hooge parameter.

2015 ◽  
Vol 62 (11) ◽  
pp. 3508-3515 ◽  
Author(s):  
Mengwei Si ◽  
Nathan J. Conrad ◽  
Sanghoon Shin ◽  
Jiangjiang Gu ◽  
Jingyun Zhang ◽  
...  

Author(s):  
Jooyoung Pyo ◽  
Akio Ihara ◽  
Shun-ichiro OHMI

Abstract This paper investigated the low frequency noise (LFN) utilizing 1/f noise and random telegraph noise (RTN) characteristics of Hf-based metal/oxide/nitride/oxide/silicon (MONOS) nonvolatile memory (NVM) device with HfO2 and HfON tunneling layer (TL). The low frequency noise spectral density (SID ) was investigated to evaluate the interface characteristics with fresh and after programming/erasing (P/E) cycles of 104. Both devices show similar slope of ~1/f in all of the frequency regions. Although HfON TL shows high SID compared to HfO2 TL, increased ratio is 15.4 which is low compared to HfO2 TL of 21.3. As decreasing the channel length from 10 to 2 μm, HfON TL shows small increased ratio of SID . Due to the nitrided characteristics, HfON TL suppress the degradation of interface. Finally, it is found that trap site of HfO2 TL is located near the interface by RTN measurement with capture (τC) and emission time constant (τE).


MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 327-338 ◽  
Author(s):  
Francesco M. Puglisi ◽  
Luca Larcher ◽  
Andrea Padovani ◽  
Paolo Pavan

ABSTRACTIn this work we explore the mechanisms responsible for Random Telegraph Noise (RTN) fluctuations in HfOx Resistive Random Access Memory (RRAM) devices. The statistical properties of the RTN are analyzed in many operating conditions exploiting the Factorial Hidden Markov Model (FHMM) to decompose the multilevel RTN traces in a superposition of two-level fluctuations. This allows the simultaneous characterization of individual defects contributing to the RTN. Results, together with multi-scale physics-based simulations, allows thoroughly investigating the physical mechanisms which could be responsible for the RTN current fluctuations in the two resistive states of these devices, including also the charge transport features in a comprehensive framework. We consider two possible options, which are the Coulomb blockade effect and the possible existence of metastable states for the defects assisting charge transport. Results indicate that both options may be responsible for RTN current fluctuations in HRS, while RTN in LRS is attributed to the temporary screening effect of the charge trapped at defect sites around the conductive filament.


2015 ◽  
Vol 36 (10) ◽  
pp. 1040-1043 ◽  
Author(s):  
Yong Xu ◽  
Chuan Liu ◽  
Paul Seyram K. Amegadez ◽  
Gi-Seong Ryu ◽  
Huaixin Wei ◽  
...  

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