scholarly journals High-throughput impedance spectroscopy biosensor array chip

2014 ◽  
Vol 372 (2012) ◽  
pp. 20130107 ◽  
Author(s):  
Xiaowen Liu ◽  
Lin Li ◽  
Andrew J. Mason
Keyword(s):  
Impedance Spectroscopy ◽  
Complementary Metal Oxide Semiconductor ◽  
Cellular Membrane ◽  
Measurement Range ◽  
Oxide Semiconductor ◽  
Fully Integrated ◽  
Impedance Response ◽  
Biosensor Array ◽  
Impedance Extraction ◽  
Dependent Behaviour

Impedance spectroscopy is a powerful tool for characterizing materials that exhibit a frequency dependent behaviour to an applied electric field. This paper introduces a fully integrated multi-channel impedance extraction circuit that can both generate AC stimulus signals over a broad frequency range and also measure and digitize the real and imaginary components of the impedance response. The circuit was fabricated in a 0.5 μm complementary metal-oxide semiconductor. Tailored for cellular membrane interface characterization, the signal generator produces sinusoidal waves from 10 mHz to 10 kHz. To suit a variety of applications, the impedance extraction circuit provides a programmable current measurement range from 100 pA to 100 nA with a measured resolution of approximately 100 fA. Occupying only 0.045 mm 2 per measurement channel, the circuit is compact enough to include nearly 200 channels in a 3×3 mm 2 die area.

scholarly journals Fully integrated CMOS-compatible polarization analyzer

Nanophotonics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 467-474 ◽  
Author(s):  
Wenhao Wu ◽  
Yu Yu ◽  
Wei Liu ◽  
Xinliang Zhang
Keyword(s):  
Polarization State ◽  
Complementary Metal Oxide Semiconductor ◽  
Polarization Measurement ◽  
Oxide Semiconductor ◽  
Polarization Angle ◽  
Fully Integrated ◽  
Polarization Analyzer ◽  
On Chip ◽  
Easy Integration ◽  
Silicon Based

AbstractPolarization measurement has been widely used in material characterization, medical diagnosis and remote sensing. However, existing commercial polarization analyzers are either bulky schemes or operate in non-real time. Recently, various polarization analyzers have been reported using metal metasurface structures, which require elaborate fabrication and additional detection devices. In this paper, a compact and fully integrated silicon polarization analyzer with a photonic crystal-like metastructure for polarization manipulation and four subsequent on-chip photodetectors for light-current conversion is proposed and demonstrated. The input polarization state can be retrieved instantly by calculating four output photocurrents. The proposed polarization analyzer is complementary metal oxide semiconductor-compatible, making it possible for mass production and easy integration with other silicon-based devices monolithically. Experimental verification is also performed for comparison with a commercial polarization analyzer, and deviations of the measured polarization angle are <±1.2%.

scholarly journals A Fully-Integrated 180 nm CMOS 1.2 V Low-Dropout Regulator for Low-Power Portable Applications

Electronics ◽  
2021 ◽  
Vol 10 (17) ◽  
pp. 2108
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Low Voltage ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Fully Integrated ◽  
Low Voltage Operation ◽  
Error Amplifier ◽  
Ldo Regulator

This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a –40 to 120°C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (Iq = 8.6 µA) and minimum area consumption (0.109 mm2) are maintained, including a reference voltage Vref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off.

scholarly journals Current Measurement Transducer Based on Current-To-Voltage-To-Frequency Converting Ring Oscillator with Cascade Bias Circuit

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 493
Author(s):  
Jongha Park ◽  
Jung-Hyun Park ◽  
Seong-Ook Jung
Keyword(s):  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Measurement Range ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Measurement Transducer ◽  
Current Output ◽  
Differential Nonlinearity ◽  
Rail To Rail

We propose a ring oscillator (RO) based current-to-voltage-to-frequency (I–V–F) converting current transducer with a cascade bias circuit. The I–V–F converting scheme guarantees highly stable biasing against RO, with a rail-to-rail output operation. This device was fabricated using National NanoFab Center (NNFC) 180 nm complementary metal-oxide-semiconductor (CMOS) technology, which achieves a current resolution of 1 nA in a measurement range up to 200 nA. A noise floor of 11.8 pA/√Hz, maximum differential nonlinearity (DNL) of 0.15 in 1 nA steps, and rail-to-rail output with a 1.8 V power supply is achieved. The proposed transducer can be effectively applied to bio-sensing devices requiring a compact area and low power consumption with a low current output. The fabricated structure can be applied to monolithic-three-dimensional integration with a bio-sensing device.

scholarly journals Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

2005 ◽  
Vol 87 (4) ◽  
pp. 043507 ◽  
Author(s):  
E. Forsen ◽  
G. Abadal ◽  
S. Ghatnekar-Nilsson ◽  
J. Teva ◽  
J. Verd ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mass Sensor ◽  
Fully Integrated

DESIGN OF A FULLY INTEGRATED 2.4 GHz FREQUENCY PLL SYNTHESIZER FOR ZigBee TRANSCEIVER APPLICATION

2014 ◽  
Vol 23 (10) ◽  
pp. 1450137 ◽  
Author(s):  
DI LI ◽  
YINTANG YANG ◽  
DUAN ZHOU ◽  
YANI LI ◽  
XIAOPENG WU
Keyword(s):  
Frequency Synthesizer ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Resolution ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Amplitude Control ◽  
Fully Integrated ◽  
Automatic Amplitude Control ◽  
Metal Insulator Metal

A 2.4-GHz fully integrated frequency synthesizer is presented in this paper for Low-IF ZigBee (IEEE802.15.4) transceiver applications. The frequency synthesizer meets the system requirement of 2.4–2.4835 GHz frequency range with a frequency resolution of 5 MHz. The automatic-amplitude control (AAC) technique is employed for the voltage-controlled oscillator (VCO) which helps to optimize the output amplitude of the VCO over voltage, process and temperature variations. The chip has been fabricated in a 0.18 μm complementary metal oxide semiconductor (CMOS) process using a single poly layer, four metal layers and metal–insulator–metal (MIM) capacitors. The synthesized has a current dissipation of 4.7 mA from a 1.8 V power supply and occupies an area of 1 mm2 × 0.85 mm2. Measurement results show that the phase noise are -82 dBc/Hz–100 kHz offset and -109 dBc/Hz–1 MHz offset respectively.

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