scholarly journals Current Measurement Transducer Based on Current-To-Voltage-To-Frequency Converting Ring Oscillator with Cascade Bias Circuit

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 493
Author(s):  
Jongha Park ◽  
Jung-Hyun Park ◽  
Seong-Ook Jung
Keyword(s):  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Measurement Range ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Measurement Transducer ◽  
Current Output ◽  
Differential Nonlinearity ◽  
Rail To Rail

We propose a ring oscillator (RO) based current-to-voltage-to-frequency (I–V–F) converting current transducer with a cascade bias circuit. The I–V–F converting scheme guarantees highly stable biasing against RO, with a rail-to-rail output operation. This device was fabricated using National NanoFab Center (NNFC) 180 nm complementary metal-oxide-semiconductor (CMOS) technology, which achieves a current resolution of 1 nA in a measurement range up to 200 nA. A noise floor of 11.8 pA/√Hz, maximum differential nonlinearity (DNL) of 0.15 in 1 nA steps, and rail-to-rail output with a 1.8 V power supply is achieved. The proposed transducer can be effectively applied to bio-sensing devices requiring a compact area and low power consumption with a low current output. The fabricated structure can be applied to monolithic-three-dimensional integration with a bio-sensing device.

scholarly journals Radiation Assessment of a 15.6ps Single-Shot Time-to-Digital Converter in Terms of TID

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 558 ◽  
Author(s):  
Bjorn Van Bockel ◽  
Jeffrey Prinzie ◽  
Paul Leroux
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Single Shot ◽  
Digital Converter ◽  
Time To Digital Converter ◽  
Pvt Variations ◽  
Radiation Tolerant ◽  
Radiation Measurements

This article presents a radiation tolerant single-shot time-to-digital converter (TDC) with a resolution of 15.6 ps, fabricated in a 65 nm complementary metal oxide semiconductor (CMOS) technology. The TDC is based on a multipath pseudo differential ring oscillator with reduced phase delay, without the need for calibration or interpolation. The ring oscillator is placed inside a Phase Locked Loop (PLL) to compensate for Process, Voltage and Temperature (PVT) variations- and variations due to ionizing radiation. Measurements to evaluate the performance of the TDC in terms of the total ionizing dose (TID) were done. Two different samples were irradiated up to a dose of 2.2 MGy SiO 2 while still maintaining a resolution of 15.6 ps. The TDC has a differential non-linearity (DNL) and integral non-linearity (INL) of 0.22 LSB rms and 0.34 LSB rms respectively.

Wireless Transceiver for Three-Dimensional Integrated Circuits Using a Ring Oscillator

2019 ◽  
Vol 29 (10) ◽  
pp. 2050161
Author(s):  
Dongwoo Moon ◽  
Milim Lee ◽  
Changhyun Lee ◽  
Joung-Hu Park ◽  
Changkun Park
Keyword(s):  
Integrated Circuits ◽  
Three Dimensional ◽  
Digital Signal ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Voltage Multiplier ◽  
Wireless Transceiver ◽  
Pulse Type

In this paper, we propose an oscillation-type transceiver for wireless chip-to-chip communication (WCC). The proposed transceiver is composed of a ring oscillator, coils, inverter-type amplifier, voltage multiplier and comparator. The ring oscillator itself acts as the on–off keying (OOK) modulator. The envelope of the transferred OOK-modulated signal is detected in the voltage multiplier of the receiver. Given that the proposed transceiver uses an OOK-modulated oscillating signal, the noise immunity is improved compared to the typical pulse-type transceiver. To verify the functionality of the proposed transceiver, we design the transceiver using the 180-nm complementary metal-oxide-semiconductor process. From the measured results, we verify that the proposed transceiver recovers the entered digital signal up to a distance of 0.2[Formula: see text]mm between the primary and secondary coils. Additionally, the sensitivity to the bias voltage of the latch is nonexistent by virtue of removing the latch in the proposed transceiver.

scholarly journals Performance Analysis of Ring Oscillators and Current-Starved VCO in 45-nm CMOS Technology

2022 ◽  
Vol 10 (1) ◽  
pp. 732-737
Author(s):  
Prakash Sharma
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Center Frequency ◽  
Noise Power ◽  
Ring Oscillators ◽  
Voltage Controlled Oscillator

Abstract: This paper presents a relative study among two Ring oscillators architecture (CMOS, NMOS) and current-starved Voltage-controlled oscillator (CS-VCO) on the basis of different parameters like power dissipation ,phase noise etc. All the design has been done in 45- nm CMOS technology node and 2.3 GHz Centre frequency have been taken for the comparison because of their applications in AV Devices and Radio control. An inherent idea of the given performance parameters has been realize by thecomparative study. The comparative data shows that NMOS based Ring oscillator is good option in terms of the phase noise performance. In this study NMOS Ring Oscillator have attain a phase noise -97.94 dBc/Hz at 1 MHz offset frequency from 2.3 GHz center frequency. The related data also shows that CMOS Ring oscillator is the best option in terms of power consumption. In this work CMOS Ring oscillator evacuatea power of 1.73 mW which is quite low. Keywords: Voltage controlled oscillator (VCO), phase noise, power consumption, Complementary metal-oxide-semiconductor (CMOS), Current Starved Voltage-Controlled Oscillator (CS- VCO), Pull up network (PUN), Pull down network (PDN)

Monolithic-3D (M3D) Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical (CMOS-NEM) Hybrid Reconfigurable Logic (RL) Circuits

2020 ◽  
Vol 20 (7) ◽  
pp. 4176-4181
Author(s):  
Ji Wang Ko ◽  
Woo Young Choi
Keyword(s):  
Metal Oxide ◽  
Power Consumption ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Reconfigurable Logic ◽  
Signal Transfer ◽  
Technology Node

Monolithic-three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM) hybrid reconfigurable logic (RL) circuits are compared and analyzed with CMOS-only RL ones in the 130-nm CMOS technology node. M3D CMOS-NEM hybrid RL circuits are superior to CMOS-only ones in terms of power consumption and signal transfer speed thanks to the NEM memory switches. As well as in the routing part, it has many advantages in the logic part following the switch.

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1050-1053 ◽  
Author(s):  
Masayasu Miyake ◽  
Toshio Kobayashi ◽  
Yutaka Sakakibara ◽  
Kimiyoshi Deguchi ◽  
Mitsutoshi Takahashi
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

A 60 GHz reconfigurable active phase shifter based on a vector modulator in 65 nm CMOS technology

2016 ◽  
Vol 8 (3) ◽  
pp. 399-404 ◽  
Author(s):  
Boris Moret ◽  
Nathalie Deltimple ◽  
Eric Kerhervé ◽  
Baudouin Martineau ◽  
Didier Belot
Keyword(s):  
Phase Shift ◽  
Phase Shifter ◽  
Complementary Metal Oxide Semiconductor ◽  
Active Phase ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
60 Ghz ◽  
Semiconductor Technology ◽  
Vector Modulator ◽  
Active Phase Shifter

This paper presents a 60 GHz reconfigurable active phase shifter based on a vector modulator implemented in 65 nm complementary metal–oxide–semiconductor technology. This circuit is based on the recombination of two differential paths in quadrature. The proposed vector modulator allows us to generate a phase shift between 0° and 360°. The voltage gain varies between −13 and −9 dB in function of the phase shift generated with a static consumption between 26 and 63 mW depending on its configuration.

scholarly journals LTCC Packaged Ring Oscillator Based Sensor for Evaluation of Cell Proliferation

Sensors ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 3346 ◽  
Author(s):  
Joni Kilpijärvi ◽  
Niina Halonen ◽  
Maciej Sobocinski ◽  
Antti Hassinen ◽  
Bathiya Senevirathna ◽  
...  
Keyword(s):  
Frequency Shift ◽  
Flip Chip ◽  
Effective Permittivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Cellular Adhesion ◽  
Sensor Response ◽  
Lung Epithelial Cells ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Chip Surface

A complementary metal-oxide-semiconductor (CMOS) chip biosensor was developed for cell viability monitoring based on an array of capacitance sensors utilizing a ring oscillator. The chip was packaged in a low temperature co-fired ceramic (LTCC) module with a flip chip bonding technique. A microcontroller operates the chip, while the whole measurement system was controlled by PC. The developed biosensor was applied for measurement of the proliferation stage of adherent cells where the sensor response depends on the ratio between healthy, viable and multiplying cells, which adhere onto the chip surface, and necrotic or apoptotic cells, which detach from the chip surface. This change in cellular adhesion caused a change in the effective permittivity in the vicinity of the sensor element, which was sensed as a change in oscillation frequency of the ring oscillator. The sensor was tested with human lung epithelial cells (BEAS-2B) during cell addition, proliferation and migration, and finally detachment induced by trypsin protease treatment. The difference in sensor response with and without cells was measured as a frequency shift in the scale of 1.1 MHz from the base frequency of 57.2 MHz. Moreover, the number of cells in the sensor vicinity was directly proportional to the frequency shift.

scholarly journals High-throughput impedance spectroscopy biosensor array chip

2014 ◽  
Vol 372 (2012) ◽  
pp. 20130107 ◽  
Author(s):  
Xiaowen Liu ◽  
Lin Li ◽  
Andrew J. Mason
Keyword(s):  
Impedance Spectroscopy ◽  
Complementary Metal Oxide Semiconductor ◽  
Cellular Membrane ◽  
Measurement Range ◽  
Oxide Semiconductor ◽  
Fully Integrated ◽  
Impedance Response ◽  
Biosensor Array ◽  
Impedance Extraction ◽  
Dependent Behaviour

Impedance spectroscopy is a powerful tool for characterizing materials that exhibit a frequency dependent behaviour to an applied electric field. This paper introduces a fully integrated multi-channel impedance extraction circuit that can both generate AC stimulus signals over a broad frequency range and also measure and digitize the real and imaginary components of the impedance response. The circuit was fabricated in a 0.5 μm complementary metal-oxide semiconductor. Tailored for cellular membrane interface characterization, the signal generator produces sinusoidal waves from 10 mHz to 10 kHz. To suit a variety of applications, the impedance extraction circuit provides a programmable current measurement range from 100 pA to 100 nA with a measured resolution of approximately 100 fA. Occupying only 0.045 mm 2 per measurement channel, the circuit is compact enough to include nearly 200 channels in a 3×3 mm 2 die area.

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