Imaging with Nanometer Resolution Using Optically Active Defects in Silicon Carbide

AbstractErbium doping of silicon and silicon carbide using implantation followed by ion beam induced epitaxial crystallization (IBIEC) is investigated. The implanted concentration of Er was 1.4 at% in both cases. In Si(100), Rutherford backscattering/channeling revealed that about 40% of the Er atoms evolved upon rapid thermal annealing from an undetermined position (room temperature) to an interstitial tetrahedral position (650°C) and finally to a substitutional position (950°C). The remaining Er atoms were presumably trapped in the small precipitates visible in high resolution transmission electron microscopy. The photoluminescence at 1.54 μπι of Er3+ is enhanced with annealing and persists up to room temperature after a 950 °C 1 min anneal. The high concentration of optically active Er atoms is illustrated by the lack of saturation of the photoluminescence at high pumping excitation intensity. Erbium was also implanted into cubic silicon carbide films prepared by chemical vapor deposition on Si at 900 °C. Both solid phase epitaxy (SPE) and IBIEC were performed. After a 950°C anneal, the low temperature photoluminescence at 1.54 μιη after IBIEC was five times higher in SiC than in silicon. The difference in photoluminescence linewidth between IBIEC (broad lines) and SPE (sharp lines) is explained in terms of interactions between optically active erbium atoms.

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Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Nature Communications ◽

10.1038/ncomms8578 ◽

2015 ◽

Vol 6 (1) ◽

Cited By ~ 90

Author(s):

F. Fuchs ◽

B. Stender ◽

M. Trupke ◽

D. Simin ◽

J. Pflaum ◽

...

Keyword(s):

Silicon Carbide ◽

Near Infrared ◽

Single Photon ◽

Optically Active ◽

Single Photon Emitters

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Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

Nano Letters ◽

10.1021/acs.nanolett.6b05395 ◽

2017 ◽

Vol 17 (5) ◽

pp. 2865-2870 ◽

Cited By ~ 39

Author(s):

H. Kraus ◽

D. Simin ◽

C. Kasper ◽

Y. Suda ◽

S. Kawabata ◽

...

Keyword(s):

Silicon Carbide ◽

Proton Beam ◽

Three Dimensional ◽

Optically Active ◽

Proton Beam Writing

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Оптический квантовый термометр с субмикронным разрешением, основанный на явлении кросс-релаксации спиновых уровней

Письма в журнал технической физики ◽

10.21883/pjtf.2018.17.46568.17399 ◽

2018 ◽

Vol 44 (17) ◽

pp. 34

Author(s):

А.Н. Анисимов ◽

Р.А. Бабунц ◽

М.В. Музафарова ◽

А.П. Бундакова ◽

В.А. Солтамов ◽

...

Keyword(s):

Silicon Carbide ◽

Fine Structure ◽

Spatial Resolution ◽

Spin State ◽

Physical Phenomenon ◽

Strong Dependence ◽

Optical Response ◽

Optically Active ◽

Cross Relaxation ◽

Active Centers

AbstractAn optical quantum thermometer with a submicron spatial resolution that is based on the physical phenomenon of optical response in the system of spin centers in silicon carbide under conditions of cross-relaxation between the optically active centers in quadruplet spin state and triplet centers, where there is anomalously strong dependence of the splitting of the fine structure on temperature, has been proposed.

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Imaging of Optically Active Defects with Nanometer Resolution

Nano Letters ◽

10.1021/acs.nanolett.7b04819 ◽

2018 ◽

Vol 18 (3) ◽

pp. 1739-1744 ◽

Cited By ~ 30

Author(s):

Jiandong Feng ◽

Hendrik Deschout ◽

Sabina Caneva ◽

Stephan Hofmann ◽

Ivor Lončarić ◽

...

Keyword(s):

Optically Active ◽

Nanometer Resolution

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Irradiation behavior of pyrolytic silicon carbide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074288 ◽

1983 ◽

Vol 41 ◽

pp. 72-73

Author(s):

R. J. Lauf

Keyword(s):

Silicon Carbide ◽

Fission Products ◽

Thermodynamics And Kinetics ◽

Neutron Fluences ◽

Fuel Particles ◽

Sic Coatings ◽

Irradiation Behavior ◽

Kinetics Of ◽

Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

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Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088919 ◽

1991 ◽

Vol 49 ◽

pp. 920-921

Author(s):

K. B. Alexander ◽

P. F. Becher

Keyword(s):

Silicon Carbide ◽

High Resolution Electron Microscopy ◽

Ceramic Composites ◽

Interface Debonding ◽

Resolution Electron ◽

Microstructural Evaluation ◽

Carbon Coated ◽

Electron Energy Loss ◽

Interfacial Films ◽

Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

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TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138129 ◽

1995 ◽

Vol 53 ◽

pp. 350-351

Author(s):

L. A. Giannuzzi ◽

C. A. Lewinsohn ◽

C. E. Bakis ◽

R. E. Tressler

Keyword(s):

Silicon Carbide ◽

Creep Rate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Primary Creep ◽

Excess Carbon ◽

Silicon Carbide Fibers ◽

Sic Fiber ◽

Carbon Core ◽

Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1980420 ◽

1980 ◽

Vol 41 (C4) ◽

pp. C4-111-C4-112 ◽

Cited By ~ 1

Author(s):

V. V. Makarov ◽

T. Tuomi ◽

K. Naukkarinen ◽

M. Luomajärvi ◽

M. Riihonen

Keyword(s):

Silicon Carbide ◽

Ion Implanted

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Optical analysis of ink and other contaminants in process waters

TAPPI Journal ◽

10.32964/tj11.8.51 ◽

2012 ◽

Vol 11 (8) ◽

pp. 51-58

Author(s):

ANTTI HAAPALA ◽

MIKA KÖRKKÖ ◽

ELISA KOIVURANTA ◽

JOUKO NIINIMÄKI

Keyword(s):

Optically Active ◽

Process Water ◽

Paper Machine ◽

Optical Analysis ◽

Direct Process ◽

Active Components ◽

Water Contaminants ◽

Dependent Measurement ◽

Measurement Methodology

Analysis methods developed specifically to determine the presence of ink and other optically active components in paper machine white waters or other process effluents are not available. It is generally more interest¬ing to quantify the effect of circulation water contaminants on end products. This study compares optical techniques to quantify the dirt in process water by two methods for test media preparation and measurement: direct process water filtration on a membrane foil and low-grammage sheet formation. The results show that ink content values obtained from various analyses cannot be directly compared because of fundamental issues involving test media preparation and the varied methodologies used to formulate the results, which may be based on different sets of assumptions. The use of brightness, luminosity, and reflectance and the role of scattering measurements as a part of ink content analysis are discussed, along with fine materials retention and measurement media selection. The study concludes with practical tips for case-dependent measurement methodology selection.

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