Electron diffraction patterns from scroll nanotubes: interpretation peculiarities

2015 ◽  
Vol 48 (1) ◽  
pp. 29-36 ◽  
Author(s):  
Zufar Khalitov ◽  
Azat Khadiev ◽  
Dmitry Pashin
Keyword(s):  
Electron Diffraction ◽  
Small Deviation ◽  
Structure Identification ◽  
Tube Axis ◽  
Azimuthal Dependence ◽  
Characteristic Sign ◽  
Special Values ◽  
Diffraction Patterns ◽  
Diffraction Effects ◽  
Good Agreement

This article describes the structure of scroll nanotubes and associated diffraction effects in the context of electron diffraction from a single nanotube. It is suggested that the effect of multiple equidistant splitting of diffuse reflections into cone series be used as a diffraction criterion for conical scroll structure identification. For cylindrical scroll structure determination, the effect of the azimuthal dependence of the intensity of basal diffraction spots is proposed as a characteristic sign. Good agreement between specific oscillations in both theoretical and experimental profiles of basal diffraction spots was achieved. It was also established that there are special values of chiral angles in cylindrical scroll nanotubes that lead to order enhancement in their structure along the tube axis, whereas even a small deviation from these angles results in degradation of diffraction conditions for some diffraction spots in the diffraction pattern.

Electron Diffraction Effects in Multi-Layered (Overlapping) Palladium Single-Crystal Films

1971 ◽  
Vol 29 ◽  
pp. 190-191
Author(s):  
G. I. Wong ◽  
H. P. Singh ◽  
L. E. Murr
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Multiple Diffraction ◽  
Polycrystalline Thin Films ◽  
Crystalline Substrate ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Diffraction Effects ◽  
Vapor Deposit

Simple multiple diffraction effects dealing with scattered or re-entrant beams in single foils containing twins or crystalline phases giving rise to double diffraction are generally well known. In addition, multiple diffraction arising in two overlapping thin films such as a multiple vapor deposit or an oxide on a crystalline substrate or base film has been studied. There are very few, if any, studies which attempt to systematically describe the diffraction patterns arising from overlapped, rotated, and imperfect single and polycrystalline thin films. This study demonstrates the complicated electron diffraction patterns which can arise by multiple diffraction in laye redarrays of thin Pd films, and describes the origins of some of the observed reflections.

Struktur amorpher Aufdampfschichten der Legierung (Ag+50 At.-Proz. Cu) / Structure of the Amorphous Alloy (Ag + 50 at.-% Cu)

1973 ◽  
Vol 28 (7) ◽  
pp. 1120-1130 ◽  
Author(s):  
G. Breitling ◽  
S. Mader ◽  
H. Richter
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Amorphous Alloy ◽  
Distribution Curve ◽  
Close Packing ◽  
Hexagonal Close Packing ◽  
Cu Alloy ◽  
Atomic Distribution ◽  
Diffraction Patterns ◽  
Good Agreement

A discussion of the atomic distribution curves obtained by Fourier-analysis of electron diffraction patterns shows that thin films of the alloy (Ag + 50 at.-% Cu) are liquid-like amorphous. The amorphous alloy (Ag + 50 at.% Cu) is composed of the 3 regions Cu, (Ag + 50 at.-% Cu) alloy and Ag. Further investigations yield two different degrees of order. At lesser order only the distances of the 3 zigzag chains of the amorphous regions show up in the atomic distribution curve, while at more extended order the three (r1) Cu, alloy, -distances of the hexagonal close packing are also observed. Finally, in the case of lesser order it is shown that the atomic distribution curve calculated from the 3 zigzag chains of the amorphous alloy (Ag + 50 at.-% Cu) is in good agreement with the experimental one.

Structure model for the τ(μ) phase in Al–Cr–Si alloys deduced from the λ phase by the strong-reflections approach

2006 ◽  
Vol 62 (1) ◽  
pp. 16-25 ◽  
Author(s):  
H. Zhang ◽  
Z.B. He ◽  
P. Oleynikov ◽  
X. D. Zou ◽  
S. Hovmöller ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Unit Cell ◽  
Structure Model ◽  
Common Features ◽  
Structure Factors ◽  
Icosahedral Clusters ◽  
Diffraction Patterns ◽  
Good Agreement

There are very obvious common features in the electron diffraction patterns of the λ and τ(μ) phases in the Al–Cr–Si system. The positions of the strong reflections and their intensity distributions are similar for the two structures. The relation of the reciprocal lattices of the λ and τ(μ) phases is studied. By applying the strong-reflections approach, the structure factors of τ(μ) are deduced from the corresponding structure factors of the known λ phase. Rules for selecting reflections for the strong-reflections approach are described. Similar to that of λ, the structure of τ(μ) contains six layers stacked along the c axis in each unit cell. There are 752 atoms in each unit cell, 53 of them are unique. The corresponding composition of the τ(μ) model is Al3.82 − x CrSi x . Simulated electron diffraction patterns from the structure model are in good agreement with the experimental ones. The arrangement of interpenetrated icosahedral clusters in the τ(μ) phase is discussed.

The Molecular Structure and Hydrogen Bond Geometry in Liquid Formamide: Electron, Neutron, and X-Ray Diffraction Studies

1983 ◽  
Vol 38 (2) ◽  
pp. 231-236 ◽  
Author(s):  
E. Kálmán ◽  
I. Serke ◽  
G. Pálinkás ◽  
M. D. Zeidler ◽  
F. J. Wiesmann ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Hydrogen Bond ◽  
Electron Diffraction ◽  
Diffraction Data ◽  
Free Molecule ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Mean ◽  
Diffraction Patterns ◽  
Good Agreement

Abstract Electron, neutron and X-ray diffraction patterns of liquid formamide have been measured at a temperature of 25 °C. Analysis of the diffraction data yields the molecular structure and the average geometry of the hydrogen bond. The molecular parameters obtained from liquid diffraction experiments are in good agreement with those from gas electron diffraction for the free molecule. The mean O…N and O…H hydrogen bond distances are 2.9 Å and 1.9 Å, respectively. Four H-bonds per molecule are found on the average. The deviation of the H-bonds from the linearity is estimated.

Transmission Electron Diffraction Analysis by Computer

1970 ◽  
Vol 28 ◽  
pp. 40-41
Author(s):  
R.A. Ploc ◽  
G.H. Keech
Keyword(s):  
Electron Diffraction ◽  
Input Data ◽  
Reciprocal Lattice ◽  
Computer Programme ◽  
Transmission Electron Diffraction ◽  
Usual Procedure ◽  
Transmission Electron ◽  
Complex Shapes ◽  
Computer Input ◽  
Diffraction Effects

An unambiguous analysis of transmission electron diffraction effects requires two samplings of the reciprocal lattice (RL). However, extracting definitive information from the patterns is difficult even for a general orthorhombic case. The usual procedure has been to deduce the approximate variables controlling the formation of the patterns from qualitative observations. Our present purpose is to illustrate two applications of a computer programme written for the analysis of transmission, selected area diffraction (SAD) patterns; the studies of RL spot shapes and epitaxy.When a specimen contains fine structure the RL spots become complex shapes with extensions in one or more directions. If the number and directions of these extensions can be estimated from an SAD pattern the exact spot shape can be determined by a series of refinements of the computer input data.

Computer Indexing of Electron Diffraction Patterns Including the Effects of Lattice Symmetry

1977 ◽  
Vol 35 ◽  
pp. 22-23
Author(s):  
J. S. Lally ◽  
R. J. Lee
Keyword(s):  
Electron Diffraction ◽  
Zone Axis ◽  
Crystal Thickness ◽  
Double Diffraction ◽  
Automated Method ◽  
Lattice Symmetry ◽  
Intensity Calculations ◽  
Unknown Structure ◽  
Diffraction Patterns ◽  
Orientation Parameters

In the 50 year period since the discovery of electron diffraction from crystals there has been much theoretical effort devoted to the calculation of diffracted intensities as a function of crystal thickness, orientation, and structure. However, in many applications of electron diffraction what is required is a simple identification of an unknown structure when some of the shape and orientation parameters required for intensity calculations are not known. In these circumstances an automated method is needed to solve diffraction patterns obtained near crystal zone axis directions that includes the effects of systematic absences of reflections due to lattice symmetry effects and additional reflections due to double diffraction processes.Two programs have been developed to enable relatively inexperienced microscopists to identify unknown crystals from diffraction patterns. Before indexing any given electron diffraction pattern, a set of possible crystal structures must be selected for comparison against the unknown.

Electron-diffraction studies in synthetic polymer materials

1983 ◽  
Vol 41 ◽  
pp. 362-365
Author(s):  
D.T. Grubb
Keyword(s):  
Electron Diffraction ◽  
Synthetic Polymer ◽  
Polymer Materials ◽  
Crystallographic Structure ◽  
High Dose ◽  
Electron Dose ◽  
Dose Rates ◽  
First Case ◽  
Diffraction Patterns ◽  
The Many

Diffraction studies in polymeric and other beam sensitive materials may bring to mind the many experiments where diffracted intensity has been used as a measure of the electron dose required to destroy fine structure in the TEM. But this paper is concerned with a range of cases where the diffraction pattern itself contains the important information.In the first case, electron diffraction from paraffins, degraded polyethylene and polyethylene single crystals, all the samples are highly ordered, and their crystallographic structure is well known. The diffraction patterns fade on irradiation and may also change considerably in a-spacing, increasing the unit cell volume on irradiation. The effect is large and continuous far C94H190 paraffin and for PE, while for shorter chains to C 28H58 the change is less, levelling off at high dose, Fig.l. It is also found that the change in a-spacing increases at higher dose rates and at higher irradiation temperatures.

Crystalline order to a resolution of 4.7 A in the sheath of Methanospirilium hungatii: A cross-beta structure

1984 ◽  
Vol 42 ◽  
pp. 214-215
Author(s):  
Murray Stewart ◽  
T.J. Beveridge ◽  
D. Sprott
Keyword(s):  
Cell Wall ◽  
Single Layer ◽  
Uranyl Acetate ◽  
Optical Diffraction ◽  
Tube Axis ◽  
Basic Subunit ◽  
Beta Structure ◽  
Diffraction Patterns ◽  
Protein Treatment ◽  
General Appearance

The archaebacterium Methanospirillum hungatii has a sheath as part of its cell wall which is composed mainly of protein. Treatment with dithiothreitol or NaOH released the intact sheaths and electron micrographs of this material negatively stained with uranyl acetate showed flattened hollow tubes, about 0.5 μm diameter and several microns long, in which the patterns from the top and bottom were superimposed. Single layers, derived from broken tubes, were also seen and were more simply analysed. Figure 1 shows the general appearance of a single layer. There was a faint axial periodicity at 28.5 A, which was stronger at irregular multiples of 28.5 A (3 and 4 times were most common), and fine striations were also seen at about 3° to the tube axis. Low angle electron diffraction patterns (not shown) and optical diffraction patterns (Fig. 2) from these layers showed a complex meridian (as a result of the irregular nature of the repeat along the tube axis) which showed a clear maximum at 28.5 A, consistent with the basic subunit spacing.

An Interactive Minicomputer Program for the Indexing and Simulation of Electron Diffraction Patterns

1976 ◽  
Vol 34 ◽  
pp. 542-543
Author(s):  
R.P. Goehner ◽  
W.T. Hatfield ◽  
Prakash Rao
Keyword(s):  
Electron Diffraction ◽  
Real Time ◽  
Pattern Analysis ◽  
Flow Diagram ◽  
Hard Copy ◽  
Time Analysis ◽  
Real Time Analysis ◽  
Transmission Electron ◽  
One Step ◽  
Diffraction Patterns

Computer programs are now available in various laboratories for the indexing and simulation of transmission electron diffraction patterns. Although these programs address themselves to the solution of various aspects of the indexing and simulation process, the ultimate goal is to perform real time diffraction pattern analysis directly off of the imaging screen of the transmission electron microscope. The program to be described in this paper represents one step prior to real time analysis. It involves the combination of two programs, described in an earlier paper(l), into a single program for use on an interactive basis with a minicomputer. In our case, the minicomputer is an INTERDATA 70 equipped with a Tektronix 4010-1 graphical display terminal and hard copy unit.A simplified flow diagram of the combined program, written in Fortran IV, is shown in Figure 1. It consists of two programs INDEX and TEDP which index and simulate electron diffraction patterns respectively. The user has the option of choosing either the indexing or simulating aspects of the combined program.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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