Depth-dependent atomic valence determination by synchrotron techniques

2018 ◽  
Vol 25 (6) ◽  
pp. 1711-1718
Author(s):  
Robbyn Trappen ◽  
Jinling Zhou ◽  
Vu Thanh Tra ◽  
Chih-Yeh Huang ◽  
Shuai Dong ◽  
...  
Keyword(s):  
Weighted Average ◽  
Fluorescence Yield ◽  
Layer By Layer ◽  
Total Electron ◽  
Model Hamiltonian ◽  
Properties Of Materials ◽  
X Ray Absorption ◽  
Non Destructive ◽  
Atomic Valence

The properties of many materials can be strongly affected by the atomic valence of the contained individual elements, which may vary at surfaces and other interfaces. These variations can have a critical impact on material performance in applications. A non-destructive method for the determination of layer-by-layer atomic valence as a function of material thickness is presented for La0.7Sr0.3MnO3 (LSMO) thin films. The method utilizes a combination of bulk- and surface-sensitive X-ray absorption spectroscopy (XAS) detection modes; here, the modes are fluorescence yield and surface-sensitive total electron yield. The weighted-average Mn atomic valence as measured from the two modes are simultaneously fitted using a model for the layer-by-layer variation of valence based on theoretical model Hamiltonian calculations. Using this model, the Mn valence profile in LSMO thin film is extracted and the valence within each layer is determined to within an uncertainty of a few percent. The approach presented here could be used to study the layer-dependent valence in other systems or extended to different properties of materials such as magnetism.

Determination of the Anomalous Scattering Factors in the Soft-X-ray Range using Diffraction from a Multilayer

1998 ◽  
Vol 31 (5) ◽  
pp. 700-707 ◽  
Author(s):  
L. Sève ◽  
J. M. Tonnerre ◽  
D. Raoux
Keyword(s):  
Fluorescence Yield ◽  
Bragg Diffraction ◽  
Anomalous Scattering ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Scattering Factor ◽  
X Ray Absorption ◽  
Kronig Relation

Bragg diffraction from an Ag/Ni multilayer was used to determine independently both the real and imaginary parts of the anomalous scattering factor (ASF) around the NiLIIIandLIIedges in the soft-X-ray range. Huge resonant variations were observed with f'' reaching 55\,r_o and f' decreasing to −63 r_o at the NiLIIIedge. The independent measurements of f' and f'' are tested for coherency using the Kramers–Kronig relation. The f'' values are also compared with those derived from X-ray absorption methods such as total electron yield and fluorescence yield measurements.

Texture and Strain Experiments at OPAL

2010 ◽  
Vol 638-642 ◽  
pp. 2823-2828 ◽  
Author(s):  
Ulf Garbe ◽  
Oliver Kirstein ◽  
Andrew Studer ◽  
Vladimir Luzin ◽  
Klaus Dieter Liss
Keyword(s):  
Residual Stresses ◽  
New Technologies ◽  
Physical And Mechanical Properties ◽  
Local Variation ◽  
Inhomogeneous Deformation ◽  
New Materials ◽  
Destructive Analysis ◽  
Properties Of Materials ◽  
Non Destructive

In response to the development of new materials and the application of materials and components in new technologies the direct measurement, calculation and evaluation of textures and residual stresses has gained worldwide significance in recent years. Non-destructive analysis for phase specific residual stresses and textures is only possible by means of diffraction methods. The determination of global texture and the local variation of texture for example by inhomogeneous deformation are very important due to the coherence between the texture and the physical and mechanical properties of materials.

scholarly journals Non-destructive determination of manganese state in rice leaf by X-ray absorption spectrometry

1990 ◽  
Vol 36 (1) ◽  
pp. 149-152 ◽  
Author(s):  
Hisao Watanabe ◽  
Masayasu Kurahashi ◽  
Isao Kojima ◽  
Kazumasa Honda ◽  
Natsuo Fukumoto
Keyword(s):  
Absorption Spectrometry ◽  
X Ray ◽  
Rice Leaf ◽  
X Ray Absorption ◽  
Non Destructive

Determination of Mechanical Properties of Magnesium Alloys and Composites by Small Punch Testing

2016 ◽  
Vol 821 ◽  
pp. 435-441 ◽  
Author(s):  
Denisa Bártková ◽  
Jiří Langer ◽  
Petr Dymáček ◽  
Libor Válka
Keyword(s):  
Mechanical Properties ◽  
Magnesium Alloys ◽  
Tensile Tests ◽  
Uniaxial Tensile ◽  
Empirical Formulas ◽  
Small Punch ◽  
Properties Of Materials ◽  
Non Destructive ◽  
Deflection Rate

Tests on miniature samples are increasingly used for the determination of mechanical properties of materials available in small volumes (non-destructive or semi-destructive approach). Small punch testing at constant deflection rate (SPT-CDR) of selected magnesium alloys and composites was performed at room temperature. Mechanical properties (yield strength, ultimate strength) were evaluated from SPT and correlated with results of uniaxial tensile tests (UTT). SPT characteristics were converted to uniaxial tensile properties by empirical formulas available in the literature. New formulas more appropriate for magnesium alloys were suggested.

X-Ray Absorption Fine Structure (Xafs) Studies Of Cobalt Silicide Thin Films

1998 ◽  
Vol 524 ◽  
Author(s):  
S. J. Naftel ◽  
I Coulthard ◽  
Y. Hu ◽  
T. K. Sham ◽  
M. Zinke-Allmang
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Fluorescence Yield ◽  
Sputter Deposition ◽  
Cobalt Silicide ◽  
Total Electron ◽  
X Ray ◽  
Absorption Fine ◽  
Fine Structures ◽  
X Ray Absorption

ABSTRACTCobalt silicide thin films, prepared on Si(100) wafers, have been studied by X-ray absorption near edge structures (XANES) at the Si K-, L2,3 and Co K-edges utilizing both total electron (TEY) and fluorescence yield (FLY) detection as well as extended X-ray absorption fine structure (EXAFS) at the Co K-edge. Samples made using DC sputter deposition on clean Si surfaces and MBE were studied along with a bulk CoSi2 sample. XANES and EXAFS provide information about the electronic structure and morphology of the films. It was found that the films studied have essentially the same structure as bulk CoSi2. Both the spectroscopy and materials characterization aspects of XAFS (X-ray absorption fine structures) are discussed.

scholarly journals EXPERIMENTAL CHARACTERIZATION OF A PHOTO-ACOUSTIC MEASUREMENT SYSTEM

2017 ◽  
pp. 053 ◽  
Author(s):  
Slobodan Todosijević ◽  
Dejan Ćirić ◽  
Branko Radičević ◽  
Zlatan Šoškić
Keyword(s):  
Transfer Function ◽  
Measurement System ◽  
Photoacoustic Signal ◽  
Electronic System ◽  
Photoacoustic Effect ◽  
Properties Of Materials ◽  
Optical Properties Of Materials ◽  
Non Destructive

The photoacoustic effect, as a non-destructive method, has increased application in defining thermal and optical properties of materials. Since the measurement of photoacoustic signal requires use of an electronic system, knowledge of the transfer function of the measurement system is a prerequisite for its application. This paper presents two different experimental techniques for the determination of the transfer function of a PA measurement system.

Silicate Formation at the Interface of high-k dielectrics and Si(001) Surfaces

2006 ◽  
Vol 917 ◽  
Author(s):  
Dieter Schmeisser ◽  
F. Zheng ◽  
F.J. Himpsel ◽  
H.J. Engelmann
Keyword(s):  
High Sensitivity ◽  
Fluorescence Yield ◽  
Gate Stacks ◽  
Total Electron ◽  
Silicate Formation ◽  
High K ◽  
Total Fluorescence ◽  
Characteristic Features ◽  
X Ray Absorption

AbstractThe composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used SR based photoelectron spectroscopies and, in particular, X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Hf-oxide prepared by ALD and compare to Pr2O3 / Si(001), and compare the two to the SiO2 / Si(001) system as a reference. For both, Hf-oxide and Pr-oxide thin films we find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges.

Silicon L2, 3-Edge Xanes Study of Platinum Silicide Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
S. J. Naftel ◽  
T. K. Sham ◽  
S. R. Das ◽  
D.-X. Xu
Keyword(s):  
Fluorescence Yield ◽  
Detection Methods ◽  
Sampling Depth ◽  
Total Electron ◽  
Edge Structure ◽  
X Ray ◽  
Platinum Silicide ◽  
Depth Difference ◽  
Total Fluorescence ◽  
X Ray Absorption

AbstractPlatinum silicide films, with a typical thickness of several hundred Å, prepared on n-type Si(100) wafers by UHV mnagnetron sputter deposition followed by rapid thermal annealing, have been studied by Si L2,3-edge X-ray absorption near edge structure (XANES) using both total electron and total fluorescence yield detection. Samples of various annealing times were studied. XANES provides information on the electronic structure and morphology of the samples. By utilizing the sampling depth difference between the two detection methods, we can clearly see XANES data from each layer (eg. surface oxide, silicide) in the sample and can estimate the thickness of the oxide layer.

Stoichiometric Determination of Graphite Intercalation Compounds Using Rutherford Backscatiering Spectrometry

1983 ◽  
Vol 27 ◽  
Author(s):  
L. Salamanca-Riba ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Experimental Error ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Intercalation Compounds ◽  
Graphite Intercalation Compounds ◽  
X Ray ◽  
Donor And Acceptor ◽  
Graphite Intercalation ◽  
Non Destructive

ABSTRACTRutherford backscattering spectrometry (RBS) is used to characterize the stoichiometry of graphite intercalation compounds (GIC). Specific application is made to several stages of different donor and acceptor compounds and to commensurate and incommensurate intercalants. A deviation from the theoretical stoichiometry is measured for most of the compounds using this non-destructive method. Within experimental error, the RBS results agree with those obtained from analysis of the (00ℓ) x-ray diffractograms and weight uptake measurements on the same samples.

Application of EDS Technique for OSP Film Thickness Measurement

2006 ◽  
Author(s):  
Prong Kongsubto ◽  
Sirarat Kongwudthiti
Keyword(s):  
Thin Film ◽  
Quantitative Analysis ◽  
Joint Strength ◽  
Critical Factor ◽  
Thickness Measurement ◽  
Ic Manufacturing ◽  
And Control ◽  
Film Thickness Measurement ◽  
Non Destructive

Abstract Organic solderability preservatives (OSPs) pad is one of the pad finishing technologies where Cu pad is coated with a thin film of an organic material to protect Cu from oxidation during storage and many processes in IC manufacturing. Thickness of OSP film is a critical factor that we have to consider and control in order to achieve desirable joint strength. Until now, no non-destructive technique has been proposed to measure OSP thickness on substrate. This paper reports about the development of EDS technique for estimating OSP thickness, starting with determination of the EDS parameter followed by establishing the correlation between C/Cu ratio and OSP thickness and, finally, evaluating the accuracy of the EDS technique for OSP thickness measurement. EDS quantitative analysis was proved that it can be utilized for OSP thickness estimation.

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