AN EFFICIENT ALGORITHM TO CALCULATE THE TEMPERATURE DISTRIBUTION AND THERMAL COUPLING ELEMENTS IN INTEGRATED CIRCUITS

The International Technology Roadmap for Silicon (ITRS) predicted that by the year 2016, a high-performance chip could dissipate as much as 300 W/cm² of heat. Another more noticeable thermal issue in IC's is the uneven temperature distribution. Increased power dissipation and greater temperature variation highlight the need for electrothermal analysis of electronic components. The goal of this research is to develop an experimental infrared measurement technique for the thermal and electrothermal analysis of electronic circuits. The objective of the electrothermal analysis is to represent the behavior of the temperature dependent characteristics of electronic device in near real work condition. An infrared (IR) thermography setup to perform the temperature distribution analysis and power dissipation measurement of the device under test is proposed in this reasearch. The system is based on a transparent oil heatsink which captures the thermal profile and run-time power dissipation from the device under test with a very fine degree of granularity. The proposed setup is used to perform the thermal analysis and power measurement of an Intel Dual Core E2180 processor. The power dissipation of the processor is obtained by calculating and measuring the heat transfer coefficient of the oil heatsink. Moreover, the power consumption of the processor is measured by isolating the current used by the CPU at run time. A three-dimensional fininte element thermal model is developed to simulate the thermal properties of the processor. The results obtained using this simulation is compared to the experimental results from IR thermography. A methodology to perform electrothermal analysis on integrated circuits is introduced. This method is based on coupling a standard electrical simulator, which is often used in the design process, and IR thermography system through an efficient interface program. The proposed method is capable of updating the temperature dependent parameters of device in near real time. The proposed method is applied to perform electrothermal analysis of a power MOSFET to measure the temperature distribution and the device performance. The DC characteristics of the device are investigated. The obtained results indicated that the operating point, I-V characteristics and power dissipation of the MOSFET vary significantly with temperature.

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Thermomechanical coupling of ice flow with the bedrock

Annals of Glaciology ◽

10.3189/172756403781815988 ◽

2003 ◽

Vol 37 ◽

pp. 390-396 ◽

Cited By ~ 1

Author(s):

Richard C.A. Hindmarsh

Keyword(s):

Temperature Distribution ◽

Horizontal Velocity ◽

Time Dependent ◽

Thermomechanical Coupling ◽

Positive Anomaly ◽

Thermal Coupling ◽

Steady Temperature ◽

Ice Flow ◽

Time Dependent Problem ◽

Geomorphological Processes

AbstractTwo aspects of thermal coupling with bedrock are considered: the coupled time-dependent problem of co-evolving temperatures in lithosphere and ice; and the influence of basal topography on steady temperature distribution within the ice. The nature of the time-dependent coupling is found to depend on the horizontal velocity. As has been suggested, there is a cooling of steady temperatures on bedrock highs, but this is phase-shifted downstream when horizontal velocities increase. This observation may have consequences for geomorphological processes such as plucking and protection. The effect of bedrock channelling on steady temperature is considered. The positive anomaly of basal temperature due to channelling increases as the transverse wavelength decreases, but not monotonically, reaching a plateau when both the wavelengths of the basal topography are around 100 km.

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Determination of temperature distribution in three-dimensional integrated circuits (3D ICs) with unequally-sized die

Applied Thermal Engineering ◽

10.1016/j.applthermaleng.2013.03.006 ◽

2013 ◽

Vol 56 (1-2) ◽

pp. 176-184 ◽

Cited By ~ 9

Author(s):

Leila Choobineh ◽

Ankur Jain

Keyword(s):

Temperature Distribution ◽

Integrated Circuits ◽

Three Dimensional ◽

3D Ics

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Thermal coupling in integrated circuits: application to thermal testing

IEEE Journal of Solid-State Circuits ◽

10.1109/4.896232 ◽

2001 ◽

Vol 36 (1) ◽

pp. 81-91 ◽

Cited By ~ 48

Author(s):

J. Altet ◽

A. Rubio ◽

E. Schaub ◽

S. Dilhaire ◽

W. Claeys

Keyword(s):

Integrated Circuits ◽

Thermal Testing ◽

Thermal Coupling

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Experimental Analysis of Thermal Coupling in 3-D Integrated Circuits

IEEE Transactions on Very Large Scale Integration (VLSI) Systems ◽

10.1109/tvlsi.2014.2357441 ◽

2015 ◽

Vol 23 (10) ◽

pp. 2077-2089 ◽

Cited By ~ 5

Author(s):

Ioannis Savidis ◽

Boris Vaisband ◽

Eby G. Friedman

Keyword(s):

Integrated Circuits ◽

Experimental Analysis ◽

Thermal Coupling

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Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.816-817.80 ◽

2013 ◽

Vol 816-817 ◽

pp. 80-83

Author(s):

R.X. Hua ◽

D.Y. Jin ◽

W.R. Zhang ◽

D. Lu ◽

Q. Fu ◽

...

Keyword(s):

Thermal Stability ◽

Temperature Distribution ◽

Simultaneous Optimization ◽

Doping Profile ◽

Current Gain ◽

Thermal Coupling ◽

Base Region ◽

Sige Hbt ◽

Ge Doping ◽

Thermal Stability Of

Considering the effect of electro-thermal feedback on the thermal stability of multi-finger power SiGe HBT, optimization of SiGe HBT on both Ge doping profile (electrical aspect) and layout (thermal aspect) is demonstrated in this paper. A novel stepped Ge doping profile of SiGe HBT with a grading Ge concentration in base region is proposed to improve the temperature coefficient of current gain, meanwhile, the cut-off frequency of HBT is also increased considerably due to the accelerated electric field caused by the Ge concentration grading. However, there is still an uneven temperature distribution. Therefore, the layout of multi-finger HBT with nun-uniform emitter finger length is optimized to compensate the thermal coupling effects and hence the uneven temperature distribution is improved obviously. It is shown that the device with simultaneous optimization of Ge doping profile and layout could be in thermal stability over a wide temperature range, which presents useful guideline to design microwave power HBTs.

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Numerical Modeling of Chemical and Thermal Coupling in a Silicon Carbide Based Heat Exchanger Reactor

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.112.93 ◽

2010 ◽

Vol 112 ◽

pp. 93-101

Author(s):

Benjamin Boniface ◽

Serge Caperaa ◽

Olivier Dalverny

Keyword(s):

Silicon Carbide ◽

Numerical Modeling ◽

Heat Exchanger ◽

Temperature Distribution ◽

Thermal Coupling ◽

Mechanical Reliability ◽

Reliability Study

The objective of this paper is to present the solution developed to model the chem- ical and thermal coupling occurring in an intensied heat exchanger reactor. The results of this modeling are all the properties of the chemical uid along the conduit, and the temperature distribution in the structure. This will be used to manage a thermal and mechanical reliability study of the heat exchanger reactor.

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