scholarly journals Modeling the temperature distribution of multi-chip integrated circuits combining Wire-Bond and Flip-Chip technologies

2019 ◽  
Vol 1399 ◽  
pp. 022036
Author(s):  
P P Boriskov ◽  
N Yu Ershova ◽  
V V Putrolaynen ◽  
P N Seredov ◽  
M A Belyaev
Keyword(s):  
Temperature Distribution ◽  
Integrated Circuits ◽  
Flip Chip ◽  
Wire Bond

Failure Analysis of Short Faults on Advanced Wire-Bond and Flip-Chip Packages with Scanning SQUID Microscopy

2004 ◽  
Author(s):  
Steve K. Hsiung ◽  
Kevan V. Tan ◽  
Andrew J. Komrowski ◽  
Daniel J. D. Sullivan ◽  
Jan Gaudestad
Keyword(s):  
Magnetic Fields ◽  
Integrated Circuits ◽  
Quantum Interference ◽  
Flip Chip ◽  
Infrared Emission ◽  
Fault Analysis ◽  
Wire Bond ◽  
Overlay Design ◽  
Scanning Squid ◽  
Metal Layers

Abstract Scanning SQUID (Superconducting Quantum Interference Device) Microscopy, known as SSM, is a non-destructive technique that detects magnetic fields in Integrated Circuits (IC). The magnetic field, when converted to current density via Fast Fourier Transform (FFT), is particularly useful to detect shorts and high resistance (HR) defects. A short between two wires or layers will cause the current to diverge from the path the designer intended. An analyst can see where the current is not matching the design, thereby easily localizing the fault. Many defects occur between or under metal layers that make it impossible using visible light or infrared emission detecting equipment to locate the defect. SSM is the only tool that can detect signals from defects under metal layers, since magnetic fields are not affected by them. New analysis software makes it possible for the analyst to overlay design layouts, such as CAD Knights, directly onto the current paths found by the SSM. In this paper, we present four case studies where SSM successfully localized short faults in advanced wire-bond and flip-chip packages after other fault analysis methods failed to locate the defects.

Effects of Backside Circuit Edit on Transistor Characteristics

2007 ◽  
Author(s):  
R.K. Jain ◽  
T. Malik ◽  
T.R. Lundquist ◽  
Q.S. Wang ◽  
R. Schlangen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Flip Chip ◽  
Intrinsic Parameters ◽  
Chip Type ◽  
Device Structures ◽  
Before And After ◽  
Silicon Device ◽  
Metal Layers

Abstract Backside circuit edit techniques on integrated circuits (ICs) are becoming common due to increase number of metal layers and flip chip type packaging. However, a thorough study of the effects of these modifications has not been published. This in spite of the fact that the IC engineers have sometimes wondered about the effects of backside circuit edit on IC behavior. The IC industry was well aware that modifications can lead to an alteration of the intrinsic behavior of a circuit after a FIB edit [1]. However, because alterations can be controlled [2], they have not stopped the IC industry from using the FIB to successfully reconfigure ICs to produce working “silicon” to prove design and mask changes. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after various steps of modification.

Magnetic Current Imaging Techniques: Comparative Case Studies

2004 ◽  
Author(s):  
Olivier Crépel ◽  
Philippe Descamps ◽  
Patrick Poirier ◽  
Romain Desplats ◽  
Philippe Perdu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Integrated Circuits ◽  
Case Studies ◽  
Flip Chip ◽  
Imaging Techniques ◽  
Optimal Domain ◽  
Magnetic Current ◽  
Comparative Case Studies ◽  
Current Flows

Abstract Magnetic field based techniques have shown great capabilities for investigation of current flows in integrated circuits (ICs). After reviewing the performances of SQUID, GMR (hard disk head technologies) and MTJ existing sensors, we will present results obtained on various case studies. This comparison will show the benefit of each approach according to each case study (packaged devices, flip-chip circuits, …). Finally we will discuss on the obtained results to classify current techniques, optimal domain of applications and advantages.

Packaging Approach for Integrating 40/45-nm ELK Devices Into Wire Bond and Flip-Chip Packages

2011 ◽  
Vol 1 (12) ◽  
pp. 1923-1933 ◽  
Author(s):  
Tan Hua Hong ◽  
John Beleran ◽  
Koh Y. S. Drake ◽  
Ong P. L. Wilson ◽  
Gaurav Mehta ◽  
...  
Keyword(s):  
Flip Chip ◽  
Wire Bond

Electrothermal analysis of integrated circuits: a realization by infrared thermography

2021 ◽  
Author(s):  
Farnoos Farrokhi
Keyword(s):  
Temperature Distribution ◽  
Integrated Circuits ◽  
Power Dissipation ◽  
Electronic Device ◽  
Power Measurement ◽  
Device Under Test ◽  
Distribution Analysis ◽  
Ir Thermography ◽  
Temperature Dependent ◽  
Run Time

The International Technology Roadmap for Silicon (ITRS) predicted that by the year 2016, a high-performance chip could dissipate as much as 300 W/cm² of heat. Another more noticeable thermal issue in IC's is the uneven temperature distribution. Increased power dissipation and greater temperature variation highlight the need for electrothermal analysis of electronic components. The goal of this research is to develop an experimental infrared measurement technique for the thermal and electrothermal analysis of electronic circuits. The objective of the electrothermal analysis is to represent the behavior of the temperature dependent characteristics of electronic device in near real work condition. An infrared (IR) thermography setup to perform the temperature distribution analysis and power dissipation measurement of the device under test is proposed in this reasearch. The system is based on a transparent oil heatsink which captures the thermal profile and run-time power dissipation from the device under test with a very fine degree of granularity. The proposed setup is used to perform the thermal analysis and power measurement of an Intel Dual Core E2180 processor. The power dissipation of the processor is obtained by calculating and measuring the heat transfer coefficient of the oil heatsink. Moreover, the power consumption of the processor is measured by isolating the current used by the CPU at run time. A three-dimensional fininte element thermal model is developed to simulate the thermal properties of the processor. The results obtained using this simulation is compared to the experimental results from IR thermography. A methodology to perform electrothermal analysis on integrated circuits is introduced. This method is based on coupling a standard electrical simulator, which is often used in the design process, and IR thermography system through an efficient interface program. The proposed method is capable of updating the temperature dependent parameters of device in near real time. The proposed method is applied to perform electrothermal analysis of a power MOSFET to measure the temperature distribution and the device performance. The DC characteristics of the device are investigated. The obtained results indicated that the operating point, I-V characteristics and power dissipation of the MOSFET vary significantly with temperature.

Ultra-low Residue Flux Applications in RF Front-End Packages

2020 ◽  
Vol 2020 (1) ◽  
pp. 000125-000130
Author(s):  
Leo Hu ◽  
Sze Pei Lim
Keyword(s):  
Integrated Circuits ◽  
Flip Chip ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Reflow Process ◽  
Reliability Study ◽  
Rf Switches ◽  
Front End ◽  
Rf Front End ◽  
Package Reliability

Abstract With the leap into the 5G era, the demand for improvements in the performance of mobile phones is on the rise. This is also true for the quantity of radio frequency (RF) front-end integrated circuits (ICs), especially for RF switches and low noise amplifiers (LNA). It is well-known that improvements in performance depend on the combination of new design, package technology, and choice of materials. Ultra-low residue (ULR) flux is an innovative, truly no-clean, flip-chip bonding material. By using ULR flux, the typical water-wash cleaning process can be removed and, in some instances, package reliability can be improved as well. This simplified assembly process will help to reduce total packaging costs. This paper will discuss the application of ULR fluxes on land grid arrays (LGAs) and quad-flat no-leads/dual-flat no-leads (QFN/DFN) packages for RF front-end ICs, as well as the reflow process. The solder joint strength and reliability study will be shared as well.

ГИБРИДНАЯ ТЕХНОЛОГИЯ ПРОИЗВОДСТВА МНОГОКРИСТАЛЬНЫХ СИСТЕМ В КОРПУСЕ С ОДНОВРЕМЕННЫМ ПРИМЕНЕНИЕМ ТЕХНОЛОГИЙ FLIP-CHIP И WIRE BOND

2020 ◽  
Vol 13 (5s) ◽  
pp. 105-109
Author(s):  
С.А. Региня ◽  
Н.Ю. Ершова ◽  
П.В. Луньков
Keyword(s):  
Flip Chip ◽  
Wire Bond

Рассмотрена гибридная технология производства микросборок с одновременным применением технологий Flip-Chip и Wire Bond, отрабатываемая на предприятии индустриального партнера GS Nanotech. Описаны особенности основных технологических операций и методов контроля качества на каждом этапе производства.

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