An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices

2009 ◽  
Author(s):  
L. Ngwendson ◽  
M. R. Sweet ◽  
E. M. Sankara Narayanan
Keyword(s):  
High Voltage ◽  
Power Semiconductor ◽  
Bipolar Devices ◽  
Recent Developments

Wide Bandgap Semiconductor Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
T. P. Chow ◽  
N. Ramungul ◽  
M. Ghezzo
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Device ◽  
Experimental Demonstration ◽  
Power Devices ◽  
Process Technology ◽  
Power Semiconductor ◽  
Wide Bandgap Semiconductor ◽  
Simulated Performance ◽  
Device Structures

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Wide Bandgap ◽  
Power Module ◽  
Cost Performance ◽  
Power Semiconductor ◽  
Current Switch ◽  
Power Modules ◽  
Voltage Stress ◽  
3D Printed

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

scholarly journals Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies

2008 ◽  
Vol 600-603 ◽  
pp. 1031-1034
Author(s):  
Tarek Ben Salah ◽  
Samien Risaletto ◽  
Christophe Raynaud ◽  
Kamel Besbes ◽  
Dominique Bergogne ◽  
...  
Keyword(s):  
High Voltage ◽  
Doping Level ◽  
Buck Converter ◽  
Experimental Results ◽  
Resistive Load ◽  
Bipolar Devices ◽  
Voltage Transient ◽  
Set Up ◽  
Switching Mode

A novel experimental set-up is developed and validated to characterize high voltage diodes in transient switching mode. Parameters extracted from DMTVCA and OCVD techniques, like ambipolar lifetime, epilayer thickness and doping level, diode area, are validated in a buck converter with resistive load. The experimental set-up allows to measure the current and voltage transient characteristics without noise and influence of high parasitic wiring. Experimental results are compared with device simulations and a good correlation is found.

Simulation Analysis of Snubber Circuit for SiC MOSFET Inverter

2014 ◽  
Vol 1070-1072 ◽  
pp. 1241-1245
Author(s):  
Li Jun Xie ◽  
Xian Zheng Liu ◽  
Jin Yuan Li ◽  
Kun Shan Yu
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Frequency ◽  
Simulation Analysis ◽  
Pwm Inverter ◽  
Parasitic Inductance ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Snubber Circuit ◽  
Parasitic Parameters

SiC MOSFET, as a promising power semiconductor devices, has attracted attention from many laboratories and companies for its super performance in high temperature, high voltage and high frequency applications. To protect the devices from overvoltage induced by parasitic inductance in high frequency applications, snubber circuit is a must. In this paper, simulation of snubber circuit in a high frequency PWM inverter is invested, under different numbers of snubber circuit , parasitic parameters, different kinds of load and whether a SiC SBD exsits. Some useful conclusions are obtained to help design more perfect snubber circuit.

A Case for High Temperature, High Voltage SiC Bipolar Devices

2007 ◽  
Vol 556-557 ◽  
pp. 687-692 ◽  
Author(s):  
Anant K. Agarwal
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Low Voltage ◽  
Schottky Diodes ◽  
Life Time ◽  
Extreme Environment ◽  
Junction Temperature ◽  
Current Gain ◽  
Pin Diodes ◽  
Bipolar Devices

The last three years have seen a rapid growth of 600 V and 1200 V SiC Schottky diodes primarily in the Power Factor Correction (PFC) circuits. The next logical step is introduction of a SiC MOSFET to not only further improve the power density and efficiency of the PFC circuits but also to enable the entry of all SiC power modules in Pulse Width Modulated (PWM) based power converters such as motor control in 600-1200 V range. The combination of SiC MOSFET and Schottky diodes will offer 60-80% lower losses in most low voltage applications at normal operating temperatures (< 200°C) where no significant improvements in packaging are required. This will cover most commercial applications with the exception of those having to function under extreme environment (>200°C) such as applications in automotive, aerospace and oil/gas exploration. For these high temperature applications, a case can be made for 600 - 2000 V Bipolar Junction Transistors (BJTs) and PiN diodes provided we do our homework on high temperature packaging. A number of interesting device related problems persist in bipolar devices such as forward voltage increase in PiN diodes and current gain degradation in BJTs. For very high voltage (>10 kV) applications such as those found in utilities (Transmission and Distribution), Large Drives and Traction, a case can be made for >10 kV PiN diodes, IGBTs, Thyristors and GTOs. While IGBTs will be restricted to <200°C junction temperature, the PiN diodes, Thyristors and GTOs may be operated at >250°C junction temperature provided that the high temperature, high voltage packaging issues are also addressed. Significant progress has been made in the development of the p-channel IGBTs and GTOs. The main issues seem to be the VF degradation due to stacking fault formation and improvement of minority carrier life-time.

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