Electro-Migration Behavior Study on Metal Line Width and Length of AlCu Interconnects

2021 ◽  
Author(s):  
Jizhou Li ◽  
Lei Sun ◽  
Weihai Fan
Keyword(s):  
Line Width ◽  
Migration Behavior ◽  
Metal Line ◽  
Behavior Study

Latch-Up Induced Slit Voiding in Aluminum Metal Lines

1999 ◽  
Author(s):  
Chunyu Zhang ◽  
Lakshmi Vedula ◽  
Shekhar Khandekar
Keyword(s):  
High Temperature ◽  
Line Width ◽  
Fold Increase ◽  
Metal Line ◽  
Operating Life ◽  
Mixed Signal ◽  
Aluminum Metal ◽  
Temperature Operating ◽  
Latch Up

Abstract Latch-up induced during High Temperature Operating Life (HTOL) test of a mixed signal device fabricated with 1.0 μm CMOS, double poly, double metal process caused failures due to an open in aluminum metal line. Metal lines revealed wedge voids of about 50% of the line width. Triggering of latch up mechanism during the HTOL test resulted in a several fold increase of current flowing through the ground metal line. This increase in current resulted in the growth of the wedge voids leading to failures due to open metal lines.

X-Ray Diffraction Determination of the Effect of Passivations on Stress in Patterned Lines of Tungsten

1994 ◽  
Vol 338 ◽  
Author(s):  
L. Maniguet ◽  
M. Ignat ◽  
M. Dupeux ◽  
J.J. Bacmann ◽  
Ph. Normandon
Keyword(s):  
Tensile Stress ◽  
Line Width ◽  
Intrinsic Stress ◽  
X Ray Diffraction ◽  
Metal Line ◽  
X Ray ◽  
The Third ◽  
Diffraction Determination ◽  
Strain Tensors

ABSTRACTThe determination by X-ray diffraction of the elastic strain tensors and the corresponding stress tensors in patterned lines of tungsten has been performed to investigate the effect of various passivation. For unpassivated lines, the stresses are biaxial and decrease with decreasing line width. Passivation over patterned lines results in triaxial tensile stress. The stress along the line is not changed by the passivation. The stress across the line decreases as the line width decreases. The third component of stress, perpendicular to the surface, which appears with the passivation, increases with decreasing line width. High compressive intrinsic stress in the passivation does not result in high tensile stress in the metal line.

Copper damascene using low dielectric constant fluorinated amorphous carbon interlayer

1998 ◽  
Vol 511 ◽  
Author(s):  
Y. Matsubara ◽  
K. Endo ◽  
M. Iguchi ◽  
N. Ito ◽  
K. Aoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Leakage Current ◽  
Line Width ◽  
Amorphous Carbon ◽  
Annealing Temperature ◽  
Low Dielectric Constant ◽  
Metal Line ◽  
Low Dielectric ◽  
Protection Layer ◽  
Low K

ABSTRACTWe have developed a new interconnect technique using a low-k (εt,=2.5) organic interlayer (fluorinated amorphous carbon: a-C:F) and a low-resistivity metal line (copper). The new technique attains a duction in both the capacitance of the interlayer and the resistance of the metal line. We found that a-C:F on Cu reduces reflection to 10% for Kr-F line lithography. However, a-C:F cannot act as a protection layer for oxidation even at 200°C in atmospheric ambient annealing. Cu diffusion into a-C:F is about 100 nm at the annealing temperature of 450°C. The resistivity of the Cu line is 2.3–2.4 μΩ · cm for the 0.5-μm line width. Although the leakage current of the a-C:F ILD is one order higher than that of the SiO2 ILD, electrical isolation is acceptable at < 20 V when annealing is carried out at 350°C in a vacuum.

Effect of metal line width on electromigration of BEOL Cu interconnects

2018 ◽  
Author(s):  
Seungman Choi ◽  
Cathryn Christiansen ◽  
Linjun Cao ◽  
James Zhang ◽  
Ronald Filippi ◽  
...  
Keyword(s):  
Line Width ◽  
Metal Line ◽  
Cu Interconnects

On The Radii of Ap Stars

1976 ◽  
Vol 32 ◽  
pp. 49-55 ◽  
Author(s):  
F.A. Catalano ◽  
G. Strazzulla
Keyword(s):  
Observational Data ◽  
Line Width ◽  
Main Sequence ◽  
Main Sequence Stars ◽  
Ap Stars

SummaryFrom the analysis of the observational data of about 100 Ap stars, the radii have been computed under the assumption that Ap are main sequence stars. Radii range from 1.4 to 4.9 solar units. These values are all compatible with the Deutsch's period versus line-width relation.

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

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