Design of a stable pulse generator system based on a Ring-VCO Phase-Locked Loop using 180nm CMOS technology

Author(s):  
G. Blasco ◽  
E. Isern ◽  
E. Martin
2009 ◽  
Vol 18 (03) ◽  
pp. 487-495 ◽  
Author(s):  
VINCENZO STORNELLI ◽  
GIUSEPPE FERRI ◽  
KING PACE

This work presents a single chip integrated pulse generator-modulator to be utilized in a short range wireless radio sensors remote control applications. The circuit, which can generate single pulses, modulated in BPSK, OOK, PAM, and also PPM, has been developed in a standard CMOS technology (AMS 0.35 μm). Typical pulse duration is about 1 ns while pulse repetition frequency is until 200 MHz (5 ns "chip" time). The operating supply voltage is ± 2.5 V, while the whole power consumption is about 15 mW. Post-layout parametric and corner analyses have confirmed the theoretical expectations.


2019 ◽  
Vol 82 (1) ◽  
Author(s):  
Florence Choong ◽  
Mamun Ibne Reaz ◽  
Mohamad Ibrahim Kamaruzzaman ◽  
Md. Torikul Islam Badal ◽  
Araf Farayez ◽  
...  

Digital controlled oscillator (DCO) is becoming an attractive replacement over the voltage control oscillator (VCO) with the advances of digital intensive research on all-digital phase locked-loop (ADPLL) in complementary metal-oxide semiconductor (CMOS) process technology. This paper presents a review of various CMOS DCO schemes implemented in ADPLL and relationship between the DCO parameters with ADPLL performance. The DCO architecture evaluated through its power consumption, speed, chip area, frequency range, supply voltage, portability and resolution. It can be concluded that even though there are various schemes of DCO that have been implemented for ADPLL, the selection of the DCO is frequently based on the ADPLL applications and the complexity of the scheme. The demand for the low power dissipation and high resolution DCO in CMOS technology shall remain a challenging and active area of research for years to come. Thus, this review shall work as a guideline for the researchers who wish to work on all digital PLL.


2011 ◽  
Vol 32 (3) ◽  
pp. 035004 ◽  
Author(s):  
Niansong Mei ◽  
Yu Sun ◽  
Bo Lu ◽  
Yaohua Pan ◽  
Yumei Huang ◽  
...  

2011 ◽  
Vol 383-390 ◽  
pp. 7025-7031
Author(s):  
Zhong Fang Wang ◽  
Cheng Min Xie ◽  
Hong Ju Yue ◽  
Long Sheng Wu ◽  
You Bao Liu

Although body contact can solve the problem of floating body effect in the partially-depleted (PD) SOI technology, it still has important influence on the ESD protection performance. In order to investigate the influence of body contact on the ESD protection performance, three different structures are fabricated in 0.35μm PD SOI salicided CMOS technology, they are stick gate structure with body floating, H gate structure with body contact located outside the edge gate, and body tied source (BTS)structure with body contact placed intermittently along the source diffusion. The transmission line pulse generator(TLPG) measured results of these three different structures are compared and analyzed, both the stick gate structure with body floating and BTS structure have a better robustness level than H gate structure with body contact.


2012 ◽  
Vol 472-475 ◽  
pp. 2401-2404 ◽  
Author(s):  
Guo Zheng Zhu ◽  
Ji Cheng Bai ◽  
Yong Feng Guo ◽  
Peng Ju Hou ◽  
Chao Jiang Li

As demands for the micro array holes in modern industry and the characteristics of micro Electrical Discharge Machining (micro EDM), a new type micro EDM machine tool used to machine micro array holes was designed and manufactured. The machine tool contains following systems: the mechanism system, the control system, the pulse generator system and other auxiliary systems. Each system was studied respectively. Base on a large number of experiments, finally, a sample with 256 array holes was processed by the machine tool. The diameter of single hole is 45µm and precision of the holes is ±1µm. The sample has been successfully applied to R & D test of micro nozzle components


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