scholarly journals Direct Bonding and Debonding Approach of Ultrathin Glass Substrates for High Temperature Devices

Author(s):  
Messaoud Bedjaoui ◽  
Sylvain Poulet

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.



Author(s):  
Teona Mirea ◽  
Jimena Olivares ◽  
Marta Clement ◽  
Jesus Sangrador ◽  
Enrique Iborra


2015 ◽  
Vol 26 (7) ◽  
pp. 4708-4715 ◽  
Author(s):  
Naba R. Paudel ◽  
Corey R. Grice ◽  
Chuanxiao Xiao ◽  
Yanfa Yan


1991 ◽  
Vol 69 (6) ◽  
pp. 738-742
Author(s):  
M. R. Harwood ◽  
D. E. Brodie

a-Ga1−xAsx films containing small GaAs crystallites were prepared by flash evaporation onto low-temperature glass substrates. The As content in the films was varied from 41 to 69 at.%. Thermoelectric power measurements indicate that Ga-rich films are n-type and As-rich films are p-type, but the Seebeck coefficients for samples near the stoichiometric ratio were too small to measure. The optical gaps vary with As content in a way that is consistent with the suggestion that the material appears to be an alloy of a-GaAs and the excess component. High-temperature activation energies place the Fermi level near midgap in all samples and this is in line with the suggestion that this class of materials tend to self compensate as the film grows.



Author(s):  
T. Subba Rao ◽  
B. K. Samantaray ◽  
A. K. Chaudhuri

AbstractThin films of SnSe vacuum deposited on glass substrates kept at different temperatures have been studied by X-ray diffraction. It is observed that the high temperature phase of SnSe, usually found above 807 K is frozen in along with the low temperature phase when deposited at substrate temperatures of 473 K and above.



1997 ◽  
Vol 471 ◽  
Author(s):  
Dawne M. Moffatt-Fairbanks ◽  
David L. Tennent

ABSTRACTThe glass substrate plays a crucial role in the successful performance of advanced flat panel displays (FPDs). These FPD technologies include active-matrix liquid crystal displays (AMLCD) and Plasma Displays (PDP). Although these displays are different in the way in which they operate, there are several common substrate requirements, all of which are determined by the process for making the entire display. These include issues relating to substrate size, thermal shrinkage, high temperature stability, and substrate surface quality.While AMLCD technology is moving toward larger sizes, PDPs are currently large size displays, requiring large glass substrates. The primary issue in using larger substrates is minimizing distortion of the glass during high temperature processes, both viscous sag and shrinkage. These are related to the high temperature thermal stability which, in turn, is largely determined by the strain point and thermal history of the substrate. Finally, thickness uniformity and surface flaws are critical to the performance of the final display.Coming's Code 1737 glass substrate meets the requirements for AMLCDs and has become the industry standard. Corning/Saint-Gobain Code CS25 glass is a new glass that has significant benefits over soda-lime glass for PDP applications. This paper will discuss these two glasses in terms of the above-mentioned issues.



2020 ◽  
Vol 59 (7) ◽  
pp. 070901
Author(s):  
Kai-Yuan Cheng ◽  
Wei-Fu Wang ◽  
Meng-Chyi Wu ◽  
Kuang-Chien Hsieh


Author(s):  
Xiuxia Zhang

The nanocrystalline diamond film (NCDF) was screen-printed on the glass substrates. The diamond paste of printing was fabricated by mixing nanographite. High-temperature reached 573K thermal-sintering technique and the 600 K and10mins anneal-treatment was explored. SEM images shown that the surface morphology of NCDF was improved, and nanocrystalline diamond emitters exposed from NCDF through the special thermal-sintering technique and anneal-treatment process. Edges and corners of nanocrystalline diamond are natural electron emitters. The electron emission was measured in every condition under 10−6pa pressure. The result indicated that electron transfer and electron emission of NCDF were improved by thermal treatment process.



2007 ◽  
Vol 1058 ◽  
Author(s):  
Motofumi Suzuki ◽  
Kenji Hamachi ◽  
Koji Nagai ◽  
Ryo Kita ◽  
Kaoru Nakajima ◽  
...  

ABSTRACTWe demonstrate high temperature glancing deposition (HT-GLAD) of metals on the heated substrate. It has been found that Al, Ag, Au, Fe nano-whiskers grow on the substrate of Si, SiO2, and glass substrates. The robustness in the selection of materials suggests that the HT-GLAD is a universal method to grow nano-whiskers of various metals. We also demonstrate the selective growth of the nano-whiskers on the substrate with micro-trench patterns. The metal nano-whiskers are useful for the nano electromechanical devices and vacuum microelectronics.



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