Multilayer Glass Substrate with High Density Via Structure for All Inorganic Multi-chip Module

2019 ◽  
Author(s):  
Toshiki Iwai ◽  
Taiji Sakai ◽  
Daisuke Mizutani ◽  
Seiki Sakuyama ◽  
Kenji Iida ◽  
...  
Keyword(s):  
Glass Substrate ◽  
High Density

DEVELOPMENT OF A HIGH DENSITY FINITE SET OF UNIFORM FIELD EMITTERS ON A THIN FILM GLASS SUBSTRATE

1986 ◽  
Vol 47 (C2) ◽  
pp. C2-79-C2-83
Author(s):  
G. A. KITZMANN
Keyword(s):  
Thin Film ◽  
Glass Substrate ◽  
High Density ◽  
Uniform Field ◽  
Field Emitters ◽  
Finite Set

3D IPD on Thru Glass Via Substrate using panel Manufacturing Technology

2017 ◽  
Vol 2017 (1) ◽  
pp. 000097-000102 ◽  
Author(s):  
Takamasa Takano ◽  
Satoru Kuramochi ◽  
Hobie Yun
Keyword(s):  
Form Factor ◽  
Quality Factor ◽  
Glass Substrate ◽  
High Density ◽  
Color Filter ◽  
Glass Panel ◽  
Low Resistance ◽  
Low Dielectric ◽  
Front End ◽  
Rf Front End

Abstract As electronic products become smaller and thinner with increasing number of functions, the demand for high density and high integration becomes stronger. Glass has many properties that make it an ideal substrate for high integration substrate such as; ultra high resistivity, adjustable thermal expansion (CTE) high modulus, low dielectric constant, low dielectric loss and manufacturability with large panel sizes. Multi-bands with carrier aggregation, Wi-Fi/GPS coexistence, and LTE-U make RF front end more and more complicated. 3D IPD (integrated passive devices) on Glass substrate technology could be advantage solution include reducing power consumption and small form factor. This paper presents a demonstration of 3D RF front end filters using 3D solenoid inductors with through glass vias (TGV) and Cu-SiN-Cu MIM structure on Gen1 glass substrate (300mm × 400mm) panel format using color filter manufacturing line for flat panel display. For inductors, drastic performance (size and low resistance therefore high-quality factor) improvement have been demonstrated by technology evolutions from 3D solenoid using TGV with conformal Cu plating method, achieving low resistance of 3.1mohm per 70um diameter TGV on a 400um thick glass panel. This low-resistance TGV with 2.7mOhm/sq TGV connections on both sides of the glass substrate, record high inductor quality factor of 39 was obtained at 2.5GHz using five and half turn inductor of 7.9nH inductance, For capacitors, we have successfully integrated a Cu MIM (metal-insulator-metal) structure by using 15um thick Cu plates and dielectric, resulting in high capacitance density of 0.26nF/mm2 for RF application. By integrating TGV inductor-first and MIM capacitor-next, high-performance and high-density LC components are synthesized to perform as RF front end filters such as low-pass filters, diplexers, triplexers, and multiplexers. The 3D inductors, Cu MIM, LC resonators and filters were successfully integrated using glass panel manufacturing infrastructure for the first time. Process characterization and process control monitors were evaluated at the panel level to address high-volume and high-yield manufacturability of RF filters with the unprecedented filter performance in terms of insertion loss and out of band rejections in smaller form factor than any other technologies have achieved so far. Furthermore, the TGV filters were mounted on electrical evaluation boards as well as JEDEC standard testing boards to check any device-level, chip-level, and board-level reliabilities associated with glass or TGV materials as well as their interaction with Cu, SiN, polymer inter layer dielectric materials, and solder joints, showing no performance degradations during thermal cycling, drop shock, bending, or high-power testing situations.

Improving the optical and crystal properties of ZnO nanotubes via a metallic glass quantum dot underlayer

2019 ◽  
Vol 7 (17) ◽  
pp. 5163-5171 ◽  
Author(s):  
Bohr-Ran Huang ◽  
Jinn P. Chu ◽  
Cheng-Liang Hsu ◽  
Joseph E. Greene ◽  
You-Syuan Chen ◽  
...  
Keyword(s):  
Metallic Glass ◽  
Quantum Dot ◽  
Glass Substrate ◽  
High Density ◽  
Crystal Properties ◽  
Zno Nanotubes

In this study, high density (∼38 μm−2) ZnO nanotubes (NTs) were hydrothermally synthesized on a Cu47.2Zr42.1Al6.7Ti4.0 metallic glass quantum dot (MGQD)/glass substrate.

Fabrication and Photochromism of High-density Diarylethene Monolayer Immobilized on a Quartz-glass Substrate

2010 ◽  
Vol 39 (6) ◽  
pp. 638-639 ◽  
Author(s):  
Hiroyasu Nishi ◽  
Seiya Kobatake
Keyword(s):  
Quartz Glass ◽  
Glass Substrate ◽  
High Density ◽  
Quartz Glass Substrate

The Possibility of Glass Storage Device with Long Term Preservation and High Density Adopted Nd:YAG Laser

2008 ◽  
Vol 368-372 ◽  
pp. 1458-1460
Author(s):  
Tae Ho Kim ◽  
Kyu Ho Lee ◽  
Young Seok Kim ◽  
Young Joon Jung ◽  
Bong Ki Ryu
Keyword(s):  
Laser Fluence ◽  
Nd:Yag Laser ◽  
Glass Substrate ◽  
Bonding Strength ◽  
High Density ◽  
Minimum Size ◽  
Storage Device ◽  
Analogical Inference ◽  
Long Term Preservation

The purpose of this study is doing analogical inference of characteristic of glass by using the critical disconnect bonding and verifies this equation is proper or not to predict the property of matter when a laser is induced to glass substrate. As starting composition, 10Na2O-10CaO-xB2O3-(70-x)SiO2 glasses (x= 10 ~ 25) were used and Nd:YAG laser(532nm) was applied to make a microstructure onto surface. Followed to the portion of B2O3 is increasing the bonding strength was increased. As the result bump size was decreased at the same laser fluence. The minimum size of the bump was about 1.3μm at 328J/cm2 laser fluence. This size is similar pitch size compared with commercial polycarbonate CD.

scholarly journals High Density Attachment of Silver Nanoparticles onto an NH2+ Ion Implanted Indium Tin Oxide Glass Substrate

2011 ◽  
Vol 27 (11) ◽  
pp. 2671-2676
Author(s):  
LI Shuo-Qi ◽  
◽  
LIU Lu ◽  
TIAN Hui-Feng ◽  
HU Jing-Bo ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Glass Substrate ◽  
High Density ◽  
Oxide Glass ◽  
Indium Tin Oxide Glass ◽  
Ion Implanted

Laser Microformation of Thin Film on Glass Substrate for Repair of Transparent Defects on High-Density Masks

CIRP Annals ◽  
1992 ◽  
Vol 41 (1) ◽  
pp. 247-250
Author(s):  
T. Miyauchi ◽  
M. Hongo ◽  
K. Mizukoshi ◽  
M. Okunaka ◽  
T. Kawanabe ◽  
...  
Keyword(s):  
Thin Film ◽  
Glass Substrate ◽  
High Density

Benzylamine Tartrate as an Organic Glass Substrate for Carbon Films by Evaporation

1970 ◽  
Vol 28 ◽  
pp. 484-485
Author(s):  
A. C. Faberge
Keyword(s):  
Vapor Pressure ◽  
Viscous Liquid ◽  
Glass Substrate ◽  
Room Temperature ◽  
Carbon Film ◽  
Carbon Films ◽  
Organic Glass ◽  
Spectroscopic Examination ◽  
Polymeric Substrates

Benzylamine tartrate (m.p. 63°C) seems to be a better and more convenient substrate for making carbon films than any of those previously proposed. Using it in the manner described, it is easy consistently to make batches of specimen grids as open as 200 mesh with no broken squares, and without individual handling of the grids. Benzylamine tartrate (hereafter called B.T.) is a viscous liquid when molten, which sets to a glass. Unlike polymeric substrates it does not swell before dissolving; such swelling of the substrate seems to be a principal cause of breakage of carbon film. Mass spectroscopic examination indicates a vapor pressure less than 10−9 Torr at room temperature.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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