Analytical model for 3D IC temperature considering lateral heat conduction

Author(s):  
Fengjuan Wang ◽  
Ningmei Yu
Author(s):  
Xiaobin Shen ◽  
Yu Zeng ◽  
Guiping Lin ◽  
Zuodong Mu ◽  
Dongsheng Wen

During the aircraft icing process caused by super-cooled droplet impingement, the surface temperature and heat flux distributions of the skin would vary due to the solid substrate heat conduction. An unsteady thermodynamic model of the phase transition was established with a time-implicit solution algorithm, in which the solid heat conduction and the water freezing were analyzed simultaneously. The icing process on a rectangular skin segment was numerically simulated, and the variations of skin temperature distribution, thicknesses of ice layer and water film were obtained. Results show that the presented model could predict the icing process more accurately, and is not sensitive to the selection of time step. The latent heat released by water freezing affects the skin temperature, which in turn changes the icing characteristics. The skin temperature distribution would be affected notably by the boundary condition of the inner skin surface, the lateral heat conduction and thermal property of the skin. It was found that the ice accretion rate of the case that the inner surface boundary is in natural convection at ambient temperature is much smaller than that with constant ambient temperature there; due to the skin lateral heat conduction, the outer skin surface temperature increases first and then decreases with uneven distribution, leading to an unsteady ice accretion rate and uneven ice thickness distribution; a smaller heat conductivity would lead to a more uneven temperature distribution and a lower ice accretion rate in most regions, but the maximum ice thickness could be larger than that of higher heat conductivity skin. Therefore, in order to predict the aircraft icing phenomenon more accurately, it is necessary to consider the solid heat conduction and the boundary conditions of the skin substrate, instead of applying a simple boundary condition of adiabatic or a fixed temperature for the outer skin surface.


2020 ◽  
Vol 2020 ◽  
pp. 1-8
Author(s):  
Najat A. Alghamdi ◽  
Hamdy M. Youssef

Thermal and mechanical relaxation times play vital roles in the values of the quality factor of micro/nanoresonators. They can control the energy dissipation across the coupling of mechanical and thermal behavior. In this paper, we introduce an analytical model that considers a pre-stress in a micro-viscothermoelastic resonator to modify the thermal and mechanical relaxation times and thus higher the quality factor. The impacts of length scale and static pre-stress on the quality factor have been discussed. The model expects that significant improvement in terms of quality factors is possible by tuning the pre-stress and the thermal and mechanical relaxation times parameters, and the isothermal value of frequency have significant effects on the thermal quality factor of the resonators.


2016 ◽  
Vol 28 (4) ◽  
pp. 177-187
Author(s):  
Mei-Ling Wu ◽  
Jia-Shen Lan

Purpose This paper aims to develop the thermal resistance network model based on the heat dissipation paths from the multi-die stack to the ambient and takes into account the composite effects of the thermal spreading resistance and one-dimensional (1D) thermal resistance. The thermal spreading resistance comprises majority of the thermal resistance when heat flows in the horizontal direction of a large plate. The present study investigates the role of determining the temperature increase compared to the thermal resistances intrinsic to the 3D technology, including the thermal resistances of bonding layers and through silicon vias (TSVs). Design/methodology/approach This paper presents an effective method that can be applied to predict the thermal failure of the heat source of silicon chips. An analytical model of the 3D integrated circuit (IC) package, including the full structure, is developed to estimate the temperature of stacked chips. Two fundamental theories are used in this paper – Laplace’s equation and the thermal resistance network – to calculate 1D thermal resistance and thermal spreading resistance on the 3D IC package. Findings This paper provides a comprehensive model of the 3D IC package, thus improving the existing analytical approach for predicting the temperature of the heat source on the chip for the 3D IC package. Research limitations/implications Based on the aforementioned shortcomings, the present study aims to determine if the use of an analytical resistance model would improve the handling of a temperature increase on the silicon chips in a 3D IC package. To achieve this aim, a simple rectangular plate is utilized to analyze the temperature of the heat source when applying the heat flux on the area of the heat source. Next, the analytical model of a pure plate is applied to the 3D IC package, and the temperature increase is analyzed and discussed. Practical implications The main contribution of this paper is the use of a simple concept and a theoretical resistance network model to improve the current understanding of thermal failure by redesigning the parameters or materials of a printed circuit board. Social implications In this paper, an analytical model of a 3D IC package was proposed based on the calculation of the thermal resistance and the analysis of the network model. Originality/value The aim of this work was to estimate the mean temperature of the silicon chips and understand the heat convection paths in the 3D IC package. The results reveal these phenomena of the complete structure, including TSV and bump, and highlight the different thermal conductivities of the materials used in creating the 3D IC packages.


2012 ◽  
Vol 2012 (1) ◽  
pp. 001221-001228 ◽  
Author(s):  
Jui-Feng Hung ◽  
John H. Lau ◽  
Peng-Shu Chen ◽  
Shih-Hsien Wu ◽  
Sheng-Che Hung ◽  
...  

In this study, the electrical performance of a general TSV structure for high-frequency 3D IC integration applications is investigated. Emphasis is placed on the proposal of an analytical model and the analytical equations of a TSV with all its key parameters. Also, the model and equations are verified, both in the frequency and time domains, by more detailed finite element analyses. Finally, a TSV electrical design guideline is proposed.


Measurement ◽  
2015 ◽  
Vol 66 ◽  
pp. 54-61 ◽  
Author(s):  
Ruizhen Yang ◽  
Yunze He ◽  
Bin Gao ◽  
Gui Yun Tian ◽  
Jianping Peng

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