Analytical Study of Unipolar Junction Transistor as a Novel Dual Material Double Gate MOSFET to Suppress Short-Channel Effect

2018 IEEE Electron Devices Kolkata Conference (EDKCON) ◽

10.1109/edkcon.2018.8770518 ◽

2018 ◽

Author(s):

Arighna Basak ◽

Angsuman Sarkar

Keyword(s):

Analytical Study ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Double Gate Mosfet ◽

Junction Transistor ◽

Dual Material

Relation of Short Channel Effect and Scaling Theory for Double Gate MOSFET in Subthreshold Region

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2012.16.7.1463 ◽

2012 ◽

Vol 16 (7) ◽

pp. 1463-1469

Author(s):

Hak-Kee Jung

Keyword(s):

Scaling Theory ◽

Double Gate ◽

Short Channel ◽

Subthreshold Region ◽

Short Channel Effect ◽

Channel Effect ◽

Double Gate Mosfet

A Short-Channel-Effect-Degraded Noise Margin Model for Junctionless Double-Gate MOSFET Working on Subthreshold CMOS Logic Gates

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2581826 ◽

2016 ◽

Vol 63 (8) ◽

pp. 3354-3359 ◽

Cited By ~ 6

Author(s):

Te-Kuang Chiang

Keyword(s):

Logic Gates ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Noise Margin ◽

Channel Effect ◽

Double Gate Mosfet ◽

Subthreshold Cmos

Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2096 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2096-2100 ◽

Cited By ~ 4

Author(s):

Hideki Oka ◽

Ryo Tanabe ◽

Norio Sadachika ◽

Akihiro Yumisaki ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Transistor

Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach

IEEE Transactions on Electron Devices ◽

10.1109/16.535323 ◽

1996 ◽

Vol 43 (9) ◽

pp. 1387-1393 ◽

Cited By ~ 34

Author(s):

Shiao-Shien Chen ◽

J.B. Kuo

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Fully Depleted ◽

Channel Effect ◽

Deep Submicrometer ◽

Threshold Voltage Model

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2020.3020976 ◽

2020 ◽

Vol 8 ◽

pp. 939-947

Author(s):

Amin Rassekh ◽

Jean-Michel Sallese ◽

Farzan Jazaeri ◽

Morteza Fathipour ◽

Adrian M. Ionescu

Keyword(s):

Negative Capacitance ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

A Charge

Nano Scale Dual Material Gate Silicon on Nothing Junctionless MOSFET for Improving Short Channel Effect and Analog Performance

Communications in Computer and Information Science - Smart Trends in Information Technology and Computer Communications ◽

10.1007/978-981-10-3433-6_4 ◽

2016 ◽

pp. 27-38 ◽

Cited By ~ 1

Author(s):

S. C. Wagaj ◽

Y. V. Chavan

Keyword(s):

Short Channel ◽

Short Channel Effect ◽

Nano Scale ◽

Channel Effect ◽

Analog Performance ◽

Dual Material

DICE: A Beneficial Short-Channel Effect in Nanoscale Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.914835 ◽

2008 ◽

Vol 55 (3) ◽

pp. 796-802 ◽

Cited By ~ 4

Author(s):

Siddharth Chouksey ◽

Jerry G. Fossum

Keyword(s):

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

2008 11th International Biennial Baltic Electronics Conference ◽

10.1109/bec.2008.4657483 ◽

2008 ◽

Cited By ~ 14

Author(s):

Pedram Razavi ◽

Ali A. Orouji

Keyword(s):

Gate Oxide ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Double Gate Mosfet ◽

Channel Effects ◽

Dual Material

Comparison of short-channel effect and offstate leakage in symmetric vs. asymmetric double gate MOSFETs

2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) ◽

10.1109/soi.2000.892799 ◽

2002 ◽

Cited By ~ 6

Author(s):

S.H. Tang ◽

Peiqi Xuan ◽

J. Bokor ◽

Chenming Hu

Keyword(s):

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0106 ◽

2012 ◽

Author(s):

Yuk L. Tsang ◽

Xiang D. Wang ◽

Reyhan Ricklefs ◽

Jason Goertz

Keyword(s):

Threshold Voltage ◽

Electrical Characterization ◽

Cmos Technology ◽

Short Channel ◽

Visual Defect ◽

Subthreshold Region ◽

Short Channel Effect ◽

Channel Effect ◽

Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.