Extraction Method for the Impact-Ionization Multiplication Factor in Silicon at Large Operating Temperatures

2002 ◽  
Author(s):  
E. Gnani ◽  
S. Reggiani ◽  
M. Rudan ◽  
G. Baccarani
Keyword(s):  
Extraction Method ◽  
Impact Ionization ◽  
Multiplication Factor ◽  
Operating Temperatures ◽  
The Impact

Drift Velocity of Hot Carriers in a-Se Photoconductive Target

2013 ◽  
Vol 787 ◽  
pp. 337-340 ◽  
Author(s):  
Wug Dong Park ◽  
Kenkichi Tanioka
Keyword(s):  
Relaxation Time ◽  
Electric Field ◽  
Drift Velocity ◽  
Impact Ionization ◽  
Length Ratio ◽  
Multiplication Factor ◽  
Hot Carriers ◽  
Avalanche Multiplication ◽  
Relaxation Length ◽  
The Impact

Avalanche multiplication of the 0.4-μm-thick a-Se HARP (High-gain Avalanche Rushing amorphous Photoconductor) target was obtained at a high electric field. To study the drift velocity of hot carriers in the a-Se layer, the energy-and field-dependent energy relaxation length was considered in the lucky-drift model. The impact ionization energyEIof 2.0 eV and the optical phonon energyћωof 31 meV for a-Se were used to obtain the impact ionization parameters in the a-Se layer. The drift velocity of hot carriers at 1×108V/m in the 0.4-μm-thick a-Se HARP target was obtained as 1.87×106cm/s. The drift velocity of hot carriers saturates as the electric field and the avalanche multiplication factor increase. In the 0.4-μm-thick a-Se HARP target, the relaxation length ratioλE/λand the relaxation time ratioτE/τsaturate as the avalanche multiplication factor increases. In addition, the relaxation length ratioλE/λand the relaxation time ratioτE/τat 1×108V/m were 2.75 and 14.66, respectively.

Truck Tire Operating Temperatures on Flat and Curved Test Surfaces

2005 ◽  
Vol 33 (3) ◽  
pp. 156-178 ◽  
Author(s):  
T. J. LaClair ◽  
C. Zarak
Keyword(s):  
Flat Surface ◽  
Operating Temperature ◽  
Operating Conditions ◽  
Load Pressure ◽  
Truck Tire ◽  
Endurance Testing ◽  
Operating Temperatures ◽  
The Impact ◽  
Tread Rubber ◽  
Cylindrical Test

Abstract Operating temperature is critical to the endurance life of a tire. Fundamental differences between operations of a tire on a flat surface, as experienced in normal highway use, and on a cylindrical test drum may result in a substantially higher tire temperature in the latter case. Nonetheless, cylindrical road wheels are widely used in the industry for tire endurance testing. This paper discusses the important effects of surface curvature on truck tire endurance testing and highlights the impact that curvature has on tire operating temperature. Temperature measurements made during testing on flat and curved surfaces under a range of load, pressure and speed conditions are presented. New tires and re-treaded tires of the same casing construction were evaluated to determine the effect that the tread rubber and pattern have on operating temperatures on the flat and curved test surfaces. The results of this study are used to suggest conditions on a road wheel that provide highway-equivalent operating conditions for truck tire endurance testing.

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

Measurement of the impact ionization rates in Al0.06Ga0.94Sb

1990 ◽  
Vol 57 (3) ◽  
pp. 249-251 ◽  
Author(s):  
H. Kuwatsuka ◽  
T. Mikawa ◽  
S. Miura ◽  
N. Yasuoka ◽  
Y. Kito ◽  
...  
Keyword(s):  
Impact Ionization ◽  
The Impact ◽  
Ionization Rates

Effect of the impact ionization of deep traps on the field distribution in planar thin-film GaAs structures

2001 ◽  
Vol 89 (1) ◽  
pp. 327-331
Author(s):  
Eugenio F. Prokhorov ◽  
Jesus González-Hernández ◽  
Nikolai B. Gorev ◽  
Inna F. Kodzhespirova ◽  
Yury A. Kovalenko
Keyword(s):  
Thin Film ◽  
Field Distribution ◽  
Impact Ionization ◽  
Deep Traps ◽  
The Impact

scholarly journals Evaluating the Impact of DNA Extraction Method on the Representation of Human Oral Bacterial and Fungal Communities

PLoS ONE ◽  
2017 ◽  
Vol 12 (1) ◽  
pp. e0169877 ◽  
Author(s):  
Anna Vesty ◽  
Kristi Biswas ◽  
Michael W. Taylor ◽  
Kim Gear ◽  
Richard G. Douglas
Keyword(s):  
Dna Extraction ◽  
Extraction Method ◽  
Fungal Communities ◽  
Dna Extraction Method ◽  
The Impact

scholarly journals A Feature Extraction Method of Wheelset-Bearing Fault Based on Wavelet Sparse Representation with Adaptive Local Iterative Filtering

2020 ◽  
Vol 2020 ◽  
pp. 1-20
Author(s):  
Zhan Xing ◽  
Jianhui Lin ◽  
Yan Huang ◽  
Cai Yi
Keyword(s):  
Feature Extraction ◽  
Sparse Representation ◽  
Extraction Method ◽  
High Speed ◽  
Optimal Solution ◽  
Feature Extraction Method ◽  
Bearing Fault ◽  
Fault Features ◽  
Iterative Filtering ◽  
The Impact

The feature extraction of wheelset-bearing fault is important for the safety service of high-speed train. In recent years, sparse representation is gradually applied to the fault diagnosis of wheelset-bearing. However, it is difficult for traditional sparse representation to extract fault features ideally when some strong interference components are imposed on the signal. Therefore, this paper proposes a novel feature extraction method of wheelset-bearing fault based on the wavelet sparse representation with adaptive local iterative filtering. In this method, the adaptive local iterative filtering reduces the impact of interference components effectively and contributes to the extraction of sparse impulses. The wavelet sparse representation, which adopts L1-regularized optimization for a globally optimal solution in sparse coding, extracts intrinsic features of fault in the wavelet domain. To validate the effectiveness of this proposed method, both simulated signals and experimental signals are analyzed. The results show that the fault features of wheelset-bearing are sufficiently extracted by the proposed method.

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