Preliminary study on switching characteristics of silver tin oxide type contacts for capacitive load

2017 ◽  
Author(s):  
Wanbin Ren ◽  
Jianmin Wei ◽  
Xu Zhang ◽  
Fubiao Luo ◽  
Zhefeng Zhou ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Capacitive Load ◽  
Preliminary Study ◽  
Switching Characteristics

Effect of a static magnetic field onEscherichia coliadhesion and orientation

2016 ◽  
Vol 62 (11) ◽  
pp. 944-952 ◽  
Author(s):  
Lotfi Mhamdi ◽  
Nejib Mhamdi ◽  
Naceur Mhamdi ◽  
Philippe Lejeune ◽  
Nicole Jaffrezic ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Bacterial Adhesion ◽  
Parallel Magnetic Field ◽  
Field Orientation ◽  
Static Magnetic Fields ◽  
Preliminary Study ◽  
The Difference ◽  
The Magnetic Field

This preliminary study focused on the effect of exposure to 0.5 T static magnetic fields on Escherichia coli adhesion and orientation. We investigated the difference in bacterial adhesion on the surface of glass and indium tin oxide-coated glass when exposed to a magnetic field either perpendicular or parallel to the adhesion surface (vectors of magnetic induction are perpendicular or parallel to the adhesion surface, respectively). Control cultures were simultaneously grown under identical conditions but without exposure to the magnetic field. We observed a decrease in cell adhesion after exposure to the magnetic field. Orientation of bacteria cells was affected after exposure to a parallel magnetic field. On the other hand, no effect on the orientation of bacteria cells was observed after exposure to a perpendicular magnetic field.

Resistive switching characteristics of indium-tin-oxide thin film devices

2014 ◽  
Vol 211 (5) ◽  
pp. 1194-1199 ◽  
Author(s):  
Ali Khiat ◽  
Iulia Salaoru ◽  
Themistoklis Prodromakis
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Switching Characteristics ◽  
Thin Film Devices

Multi-level resistive switching characteristics of W/Co:TiO 2 /fluorine-doped tin oxide (FTO) structures

2017 ◽  
Vol 131 ◽  
pp. 34-38 ◽  
Author(s):  
Zhao Yang ◽  
Zhi Luo ◽  
Haitao Tang ◽  
Bo Huang ◽  
Weiguang Xie
Keyword(s):  
Resistive Switching ◽  
Tin Oxide ◽  
Multi Level ◽  
Switching Characteristics

Preliminary Study on Resistance of Non-Treated and Treated ITO Films

2014 ◽  
Vol 680 ◽  
pp. 111-114
Author(s):  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Chai Jee Keng ◽  
Moganraj Palianysamy ◽  
Hussin Kamarudin
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Extensive Study ◽  
Annealing Process ◽  
Tube Furnace ◽  
Sputtered Films ◽  
Number Of Layers ◽  
Preliminary Study ◽  
Type Tube ◽  
Ito Films

A study on the resistance of directly sputtered films and treated films of Indium Tin Oxide (ITO) is done to initiate an extensive study on the material. This study involves variation in terms of number of layers and duration of deposition. Treated films are produced by undergoing annealing process which is carried out using Split Type Tube Furnace. Resistance measurements were carried out using Semiconductor Parametric Analyzer (SPA). Results show that the directly sputtered ITO films produced lower resistance compared to the treated ITO films.

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