Preliminary Study on Resistance of Non-Treated and Treated ITO Films

2014 ◽  
Vol 680 ◽  
pp. 111-114
Author(s):  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Chai Jee Keng ◽  
Moganraj Palianysamy ◽  
Hussin Kamarudin
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Extensive Study ◽  
Annealing Process ◽  
Tube Furnace ◽  
Sputtered Films ◽  
Number Of Layers ◽  
Preliminary Study ◽  
Type Tube ◽  
Ito Films

A study on the resistance of directly sputtered films and treated films of Indium Tin Oxide (ITO) is done to initiate an extensive study on the material. This study involves variation in terms of number of layers and duration of deposition. Treated films are produced by undergoing annealing process which is carried out using Split Type Tube Furnace. Resistance measurements were carried out using Semiconductor Parametric Analyzer (SPA). Results show that the directly sputtered ITO films produced lower resistance compared to the treated ITO films.

Piezoresistive Properties of Ceramic Strain Sensors with Controlled Nanoporosity

2003 ◽  
Vol 785 ◽  
Author(s):  
Otto J. Gregory ◽  
Tao You
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Structural Integrity ◽  
Average Pore Size ◽  
Average Pore ◽  
Sputtered Films ◽  
Order Of Magnitude ◽  
Improved Performance ◽  
Temperature Exposure ◽  
Ito Films

ABSTRACTA ceramic strain gage based on reactively sputtered indium tin oxide thin films is being developed to monitor the structural integrity of components employed in aerospace propulsion systems that operate at temperatures in excess of 1500°C. When relatively thick indium-tin-oxide (ITO) strain gages were prepared by reactive sputtering in oxygen:argon atmospheres and annealed in nitrogen, an extremely stable piezoresistive response was observed at temperatures as high as 1530°C. SEM and AFM of these sensor surfaces after high temperature exposure revealed a partially sintered microstructure with interconnected nanoporosity. Specifically, the microstructure consisted of a contiguous network of uniform sized ITO particles with well-defined necks between individual particles. When these microstructures were compared to those of relatively thin ITO sensors sputtered in nitrogen:argon:oxygen atmospheres, i.e. ITO films prepared in a nitrogen rich plasma, the average pore size and particle size was estimated to be an order of magnitude smaller than those associate with thick ITO sensors. In the nitrogen sputtered films, enhanced electrical conduction along the surfaces of the contiguous ITO particles resulted in a very stable and large piezoresistive response with a gage factor of 11.4 and a drift rate of 0.0001%/hour at 1560°C. The improved performance realized when the ITO films were processed in nitrogen may be extended to other ITO based sensors including gas sensors and the advantages of films processed in this manner will be discussed.

scholarly journals Optoelectronic Properties of Ultrathin Indium Tin Oxide Films: A First-Principle Study

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 30
Author(s):  
Xiaoyan Liu ◽  
Lei Wang ◽  
Yi Tong
Keyword(s):  
Film Thickness ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Density Functional ◽  
Optoelectronic Properties ◽  
Surface Strain ◽  
Strain Effect ◽  
First Principle ◽  
Electrical Resistivities ◽  
Ito Films

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.

Effect of a static magnetic field onEscherichia coliadhesion and orientation

2016 ◽  
Vol 62 (11) ◽  
pp. 944-952 ◽  
Author(s):  
Lotfi Mhamdi ◽  
Nejib Mhamdi ◽  
Naceur Mhamdi ◽  
Philippe Lejeune ◽  
Nicole Jaffrezic ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Bacterial Adhesion ◽  
Parallel Magnetic Field ◽  
Field Orientation ◽  
Static Magnetic Fields ◽  
Preliminary Study ◽  
The Difference ◽  
The Magnetic Field

This preliminary study focused on the effect of exposure to 0.5 T static magnetic fields on Escherichia coli adhesion and orientation. We investigated the difference in bacterial adhesion on the surface of glass and indium tin oxide-coated glass when exposed to a magnetic field either perpendicular or parallel to the adhesion surface (vectors of magnetic induction are perpendicular or parallel to the adhesion surface, respectively). Control cultures were simultaneously grown under identical conditions but without exposure to the magnetic field. We observed a decrease in cell adhesion after exposure to the magnetic field. Orientation of bacteria cells was affected after exposure to a parallel magnetic field. On the other hand, no effect on the orientation of bacteria cells was observed after exposure to a perpendicular magnetic field.

Plasma-Assisted Deposition and Crystal Growth of Thin Indium-Tin-Oxide (ITO) Films

2004 ◽  
pp. 299-312 ◽  
Author(s):  
R. Hippler ◽  
H. Steffen ◽  
M. Quaas ◽  
T. Röwf ◽  
T.M. Tun ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ito Films

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Patterning of indium-tin-oxide (ITO) films using laser-induced forward transfer (LIFT) technique

2011 ◽  
Author(s):  
Hironobu Sakata ◽  
Akira Yoshikado ◽  
Eisuke Yokoyama ◽  
Moriaki Wakaki
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Forward Transfer ◽  
Ito Films

Efficacy of titanium doped-indium tin oxide (Ti/TiO2–ITO) films in rapid oxygen generation under photocatalysis and their suitability for bio-medical application

2014 ◽  
Vol 16 (45) ◽  
pp. 24790-24799 ◽  
Author(s):  
A. Subrahmanyam ◽  
A. Rajakumar ◽  
Md. Rakibuddin ◽  
T. Paul Ramesh ◽  
M. Raveendra Kiran ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Medical Application ◽  
Artificial Lung ◽  
Assistive Devices ◽  
Oxygen Generation ◽  
Ito Films

Fabrication of novel titanium doped ITO films and understanding the mechanism for effective photocatalytic oxygen generation for artificial lung-assistive devices.

Cu/MoS2/ITO based hybrid structure for catalysis of hydrazine oxidation

RSC Advances ◽  
2015 ◽  
Vol 5 (20) ◽  
pp. 15374-15378 ◽  
Author(s):  
Sajjad Hussain ◽  
Kamran Akbar ◽  
Dhanasekaran Vikraman ◽  
Muhmmad Arslan Shehzad ◽  
Seunho Jung ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Sputtering ◽  
Hybrid Structure ◽  
Annealing Process ◽  
Large Area ◽  
Post Annealing ◽  
Hydrazine Oxidation

We have successfully demonstrated large-area and continuous MoS2 films grown on indium tin oxide (ITO) substrates by RF sputtering followed by a post-annealing process.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

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