Use of the p-floating shielding layer for improving electric field concentration of the recessed gate

Author(s):  
Sang Jun Hwang ◽  
Seung Woo Yu ◽  
Jae In Lee ◽  
Ey-Goo Kang ◽  
Man Young Sung
Keyword(s):  
2007 ◽  
Vol 17 (01) ◽  
pp. 19-23 ◽  
Author(s):  
Valentin O. Turin ◽  
Michael S. Shur ◽  
Dmitry B. Veksler

We report on two-dimensional isothermal simulations of recessed gate and field-plated AlGaN - GaN HFETs with submicron gates. The optimization of the recessed gate shape allows us to reduce the electric field at the drain-side gate edge by approximately 30%. Our simulations reveal a dramatic increase of the effective gate length with increasing drain-to-source bias with a commensurate decrease of the cutoff frequency (up to 40% decrease for 50V). To improve the cutoff frequency for the high drain-to-source bias, we suggest using the second field plate connected to the drain with a small gap between the two field plates. In this design, the electric field in the gap between the gate and the drain field plate is higher leading to a significant reduction of the effective gate length and, as a consequence, to an increase in the cutoff frequency at high drain-to-source biases (compared to the conventional design).


Author(s):  
G. F. Rempfer

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.


Author(s):  
Patrick P. Camus

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).


1993 ◽  
Vol 3 (8) ◽  
pp. 1201-1225 ◽  
Author(s):  
G. N�ron de Surgy ◽  
J.-P. Chabrerie ◽  
O. Denoux ◽  
J.-E. Wesfreid

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