Optoelectronic Devices Based on the Directed Self-Assembly of Single InAs/InP Quantum Dots

Author(s):  
Robin L. Williams ◽  
Dan Dalacu ◽  
Michael E. Reimer ◽  
Khaled Mnaymneh ◽  
Philip J. Poole ◽  
...  
2005 ◽  
Vol 16 (9) ◽  
pp. 1630-1635 ◽  
Author(s):  
J Sormunen ◽  
J Riikonen ◽  
M Mattila ◽  
M Sopanen ◽  
H Lipsanen

2000 ◽  
Vol 380 (1-2) ◽  
pp. 183-188 ◽  
Author(s):  
K Eberl ◽  
M Lipinski ◽  
Y.M Manz ◽  
N.Y Jin-Phillipp ◽  
W Winter ◽  
...  

2021 ◽  
Author(s):  
Jianjun Liu ◽  
Kazushi Enomoto ◽  
Kotaro Takeda ◽  
Daishi Inoue ◽  
Yong-Jin Pu

The geometry in self-assembled superlattices of colloidal quantum dots (QDs) strongly affects their optoelectronic properties and is thus of critical importance for applications in optoelectronic devices. Here, we achieve the...


2001 ◽  
Vol 223 (3) ◽  
pp. 321-331 ◽  
Author(s):  
R.L. Williams ◽  
G.C. Aers ◽  
P.J. Poole ◽  
J. Lefebvre ◽  
D. Chithrani ◽  
...  

Author(s):  
Prashant Malik ◽  
Neha Gulati ◽  
Raj Kaur Malik ◽  
Upendra Nagaich

Nanotechnology deal with the particle size in nanometers. Nanotechnology is ranging from extensions of conventional device physics to completely new approaches based upon molecular self assembly, from developing new materials with dimensions on the nanoscale to direct control of matter on the atomic scale. In nanotechnology mainly three types of nanodevices are described: carbon nanotubes, quantum dots and dendrimers. It is a recent technique used as small size particles to treat many diseases like cancer, gene therapy and used as diagnostics. Nanotechnology used to formulate targeted, controlled and sustained drug delivery systems. Pharmaceutical nanotechnology embraces applications of nanoscience to pharmacy as nanomaterials and as devices like drug delivery, diagnostic, imaging and biosensor materials. Pharmaceutical nanotechnology has provided more fine tuned diagnosis and focused treatment of disease at a molecular level.    


2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.


Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).


Author(s):  
Sudesh Yadav ◽  
Satya Ranjan Jena ◽  
Bhavya M.B. ◽  
Ali Altaee ◽  
Manav Saxena ◽  
...  

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