The research on breakdown voltage of high voltage SOI LDMOS devices with shielding trench

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

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Investigation on the Breakdown Characteristics of Different Types of Lightning Rods

ELEKTRIKA- Journal of Electrical Engineering ◽

10.11113/elektrika.v17n2.30 ◽

2018 ◽

Vol 17 (2) ◽

pp. 1-5

Author(s):

Noor Azlinda Ahmad ◽

Rosniza Zainal ◽

Zuraimy Adzis

Keyword(s):

Breakdown Voltage ◽

High Voltage ◽

Horizontal Distance ◽

Different Types ◽

Series Of Experiments ◽

Voltage Breakdown

This paper investigates the voltage breakdown characteristics of three types of lightning rods - blunt, sharp and flat. The objectives of this study are to determine the voltage breakdown characteristics of various types of lightning rods and to obtain the striking distance of each rod. A series of experiments were conducted in the high voltage laboratory consisting of individual testing rod, competitive testing rod and also horizontal distance changing. All three types of rods have been tested in each experiment in order to obtain a comprehensive result. The blunt rod has been proven as the best strike receptor in comparison to sharp and flat rod. This is because breakdown voltage for blunt rod is much lower (199 kV) than that of flat and sharp rod. Therefore, replacement of widely used sharp rod with the blunt one should be considered in order to provide better protection for buildings from lightning activities.

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Thermal breakdown in high voltage direct current cable insulations due to space charges

COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering ◽

10.1108/compel-12-2017-0531 ◽

2018 ◽

Vol 37 (5) ◽

pp. 1689-1697 ◽

Cited By ~ 2

Author(s):

Christoph Jörgens ◽

Markus Clemens

Keyword(s):

Electric Field ◽

Breakdown Voltage ◽

High Voltage ◽

Direct Current ◽

Aging Effect ◽

Radial Symmetry ◽

Thermal Breakdown ◽

Content Type ◽

High Voltage Direct Current ◽

Space Charges

Purpose In high voltage direct current (HVDC), power cables heat is generated inside the conductor and the insulation during operation. A higher amount of the generated heat in comparison to the dissipated one, results in a possible thermal breakdown. The accumulation of space charges inside the insulation results in an electric field that contributes to the geometric electric field, which comes from the applied voltage. The total electric field decreases in the vicinity of the conductor, while it increases near the sheath, causing a possible change of the breakdown voltage. Design/methodology/approach Here, the thermal breakdown is studied, also incorporating the presence of space charges. For a developed electro-thermal HVDC cable model, at different temperatures, the breakdown voltage is computed through numerical simulations. Findings The simulation results show a dependence of the breakdown voltage on the temperature at the location of the sheath. The results also show only limited influence of the space charges on the breakdown voltage. Research limitations/implications The study is restricted to one-dimensional problems, using radial symmetry of the cable, and does not include any aging or long-term effect of space charges. Such aging effect can locally increase the electric field, resulting in a reduced breakdown voltage. Originality/value A comparison of the breakdown voltage with and without space charges is novel. The chosen approach allows for the first time to assess the influence of space charges and field inversion on the thermal breakdown.

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High Voltage Silicon Carbide Devices

MRS Proceedings ◽

10.1557/proc-512-77 ◽

1998 ◽

Vol 512 ◽

Cited By ~ 22

Author(s):

B. Jayant Baliga

Keyword(s):

Silicon Carbide ◽

Breakdown Voltage ◽

High Voltage ◽

Impact Ionization ◽

Voltage Drop ◽

Schottky Diodes ◽

Inversion Layer ◽

Drift Region ◽

Edge Termination ◽

Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

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Quantificational dependence of vertival breakdown voltage on top silicon and dielectric layer thickness for SOI high voltage devices

2008 International Conference on Communications, Circuits and Systems ◽

10.1109/icccas.2008.4657999 ◽

2008 ◽

Author(s):

Shengdong Hu ◽

Zhaoji Li ◽

Bo Zhang

Keyword(s):

Layer Thickness ◽

Breakdown Voltage ◽

High Voltage ◽

Dielectric Layer

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Comparative Study of SiC MOSFETs in High Voltage Switching Operation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.1081 ◽

2012 ◽

Vol 717-720 ◽

pp. 1081-1084 ◽

Cited By ~ 1

Author(s):

Tsuyoshi Funaki ◽

Yuki Nakano ◽

Takashi Nakamura

Keyword(s):

Breakdown Voltage ◽

High Voltage ◽

Current Density ◽

Power Device ◽

Resistive Load ◽

Density Condition ◽

Switching Speed ◽

Switching Operation ◽

Switching Performance ◽

Turn On

SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. Therefore, SiC MOSFETs show slower switching speed than Si MOSFETs for same current density condition.

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4.5kV SiC JBS Diodes

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.347-350.1506 ◽

2013 ◽

Vol 347-350 ◽

pp. 1506-1509 ◽

Cited By ~ 2

Author(s):

Yong Hong Tao ◽

Run Hua Huang ◽

Gang Chen ◽

Song Bai ◽

Yun Li

Keyword(s):

Numerical Simulations ◽

Breakdown Voltage ◽

High Voltage ◽

Current Density ◽

Doping Level ◽

Doping Concentration ◽

Device Structure ◽

Reverse Voltage ◽

Edge Termination ◽

Drift Layer

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V.

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Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.977 ◽

2012 ◽

Vol 717-720 ◽

pp. 977-980 ◽

Cited By ~ 3

Author(s):

Megan Snook ◽

Ty McNutt ◽

Chris Kirby ◽

Harold Hearne ◽

Victor Veliadis ◽

...

Keyword(s):

Breakdown Voltage ◽

High Voltage ◽

Cycle Time ◽

Pin Diodes ◽

Edge Termination ◽

Comparable Performance ◽

Process Complexity ◽

Single Implant ◽

The Ideal

The multi-zone junction termination extension (MJTE) is a widely used edge termination technique for achieving high voltage SiC devices. It is commonly implemented with multiple lithography and implantation events. In order to reduce process complexity, cycle time, and cost, a single photolithography and single implant MJTE technique has been successfully developed. The method utilizes a pattern of finely graduated oxide windows that filter the implant dose and create a graded MJTE in a single implant and single photolithography step. Based on this technique, 6 kV / 0.09 cm2 PiN diodes were fabricated utilizing a 120-zone single-implant JTE design. This novel single-implant MJTE design captures 93% of the ideal breakdown voltage and has comparable performance and yield to a baseline three implant process.

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