Quantificational dependence of vertival breakdown voltage on top silicon and dielectric layer thickness for SOI high voltage devices

2008 ◽  
Author(s):  
Shengdong Hu ◽  
Zhaoji Li ◽  
Bo Zhang
Keyword(s):  
Layer Thickness ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Dielectric Layer

scholarly journals A Novel Evaluation Method For Particle Deposition Measurement

Open Physics ◽  
2019 ◽  
Vol 17 (1) ◽  
pp. 927-934
Author(s):  
Tao Song ◽  
Chao Liu ◽  
Hengxuan Zhu ◽  
Min Zeng ◽  
Jin Wang
Keyword(s):  
Layer Thickness ◽  
Dielectric Layer ◽  
Gas Turbines ◽  
Particle Deposition ◽  
Optimization Design ◽  
Turbine Blades ◽  
Simulation Software ◽  
Circuit Board ◽  
Normal Operation ◽  
Mass Detection

Abstract Normal operation of gas turbines will be affected by deposition on turbine blades from particles mixed in fuels. This research shows that it is difficult to monitor the mass of the particles deposition on the wall surface in real time. With development of electronic technology, the antenna made of printed circuit board (PCB) has been widely used in many industrial fields. Microstrip antenna is first proposed for monitoring particles deposition to analyse the deposition law of the particles accumulated on the wall. The simulation software Computer Simulation Technology Microwave Studio (CST MWS) 2015 is used to conduct the optimization design of the PCB substrate antenna. It is found that the S11 of vivaldi antenna with arc gradient groove exhibits a monotonous increase with the increase of dielectric layer thickness, and this antenna is highly sensitive to the dielectric layer thickness. Moreover, a cold-state test is carried out by using atomized wax to simulate the deposition of pollutants. A relationship as a four number of times function is found between the capacitance and the deposited mass. These results provide an important reference for the mass detection of the particle deposition on the wall, and this method is suitable for other related engineering fields.

On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon

2021 ◽  
Author(s):  
Luigi Balestra ◽  
Susanna Reggiani ◽  
Antonio Gnudi ◽  
Elena Gnani ◽  
Jagoda Dobrzynska ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Diamond Like Carbon ◽  
Power Diode

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

scholarly journals Investigation on the Breakdown Characteristics of Different Types of Lightning Rods

2018 ◽  
Vol 17 (2) ◽  
pp. 1-5
Author(s):  
Noor Azlinda Ahmad ◽  
Rosniza Zainal ◽  
Zuraimy Adzis
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Horizontal Distance ◽  
Different Types ◽  
Series Of Experiments ◽  
Voltage Breakdown

This paper investigates the voltage breakdown characteristics of three types of lightning rods - blunt, sharp and flat. The objectives of this study are to determine the voltage breakdown characteristics of various types of lightning rods and to obtain the striking distance of each rod. A series of experiments were conducted in the high voltage laboratory consisting of individual testing rod, competitive testing rod and also horizontal distance changing. All three types of rods have been tested in each experiment in order to obtain a comprehensive result. The blunt rod has been proven as the best strike receptor in comparison to sharp and flat rod. This is because breakdown voltage for blunt rod is much lower (199 kV) than that of flat and sharp rod. Therefore, replacement of widely used sharp rod with the blunt one should be considered in order to provide better protection for buildings from lightning activities. 

Thermal breakdown in high voltage direct current cable insulations due to space charges

2018 ◽  
Vol 37 (5) ◽  
pp. 1689-1697 ◽  
Author(s):  
Christoph Jörgens ◽  
Markus Clemens
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Direct Current ◽  
Aging Effect ◽  
Radial Symmetry ◽  
Thermal Breakdown ◽  
Content Type ◽  
High Voltage Direct Current ◽  
Space Charges

Purpose In high voltage direct current (HVDC), power cables heat is generated inside the conductor and the insulation during operation. A higher amount of the generated heat in comparison to the dissipated one, results in a possible thermal breakdown. The accumulation of space charges inside the insulation results in an electric field that contributes to the geometric electric field, which comes from the applied voltage. The total electric field decreases in the vicinity of the conductor, while it increases near the sheath, causing a possible change of the breakdown voltage. Design/methodology/approach Here, the thermal breakdown is studied, also incorporating the presence of space charges. For a developed electro-thermal HVDC cable model, at different temperatures, the breakdown voltage is computed through numerical simulations. Findings The simulation results show a dependence of the breakdown voltage on the temperature at the location of the sheath. The results also show only limited influence of the space charges on the breakdown voltage. Research limitations/implications The study is restricted to one-dimensional problems, using radial symmetry of the cable, and does not include any aging or long-term effect of space charges. Such aging effect can locally increase the electric field, resulting in a reduced breakdown voltage. Originality/value A comparison of the breakdown voltage with and without space charges is novel. The chosen approach allows for the first time to assess the influence of space charges and field inversion on the thermal breakdown.

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

2021 ◽  
Author(s):  
Than Phyo Kyaw
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Breakdown Voltage ◽  
Carbon Doping ◽  
Avalanche Breakdown ◽  
Gate Length ◽  
20 Nm ◽  
Gan Buffer Layer ◽  
Effect Of Doping

The influence of the GaN buffer layer doped with carbon on the avalanche breakdown effect of normally open HEMT AlGaN / AlN / GaN transistors was studied. The avalanche breakdown was simulated in a structure where the gate length is LG = 0.3 mkm, the distance between the source and gate is LSG = 1.5 mkm, and the distance between the gate and drain is LGD = 2.2 mkm. For modeling, consider a layer doped with carbon, the thickness of which is 0.3 mkm, and the layer is located at a distance of 20 nm from the channel. The Simulation showed that with an increase in the concentration of carbon doping of the buffer, the breakdown voltage increases in the range UB = 225 – 360 (V). When the layer thickness changes to 0.4 mkm, the breakdown voltage increases in the range UB = 230 – 446 (V). For a structure where the gate length is LG = 0.8 mkm, the distance between the source and the gate is LSG = 1.0 mkm, the distance between the gate and drain is LGD = 3.0 mkm, the breakdown voltage increases in the range UB = 300 – 622 (V).

scholarly journals Assessment of Potential of the High-Voltage Anodic Plasma Source to Deposit Multilayer Structures Relevant to X-ray Mirror Applications

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 531
Author(s):  
Aurel-Mihai Vlaicu ◽  
Alexandru Anghel ◽  
Marius Badulescu ◽  
Cristina Surdu-Bob
Keyword(s):  
Film Thickness ◽  
Layer Thickness ◽  
Deposition Rate ◽  
High Voltage ◽  
Plasma Source ◽  
Multilayer Structures ◽  
Deposition Technique ◽  
X Ray ◽  
Coating Technique ◽  
Glass Substrates

(1) Background: The high-voltage anodic-plasma (HVAP) coating technique has a series of specificities that are not simultaneously met in other deposition methods. This paper aimed at assessing the potential of HVAP to synthesize quality multilayers for X-ray optics. (2) Methods: Nanolayers of W, Ta, B, and Si were deposited as mono-, bi-, and multilayers onto very smooth glass substrates by HVAP, and their thickness and density were analyzed by X-ray reflectometry. The minimal film thickness needed to obtain continuous nanolayers was also investigated. (3) Results: Nanolayer roughness did not increase with layer thickness, and could be lowered via deposition rate, with values as low as 0.6 for the W nanolayer. Minimal film thickness for continuous films for the studied metals was 4 nm (W), 6 nm (Ta), 2.5 nm (B), and 6 nm (Si). (4) Conclusions: The investigation revealed the range of parameters to be used for obtaining quality nanolayers and multilayers by HVAP. Advantages and possible improvements are discussed. This deposition technique can be tailored for demanding applications such as X-ray mirrors.

Sign in / Sign up

Export Citation Format

Share Document