An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature

2005 ◽  
Author(s):  
Gui-zhen Yan ◽  
P.C.H. Chan ◽  
J.K.O. Sin ◽  
I-Ming Hsing ◽  
Yang-yuan Wang
Keyword(s):  
Gas Sensor ◽  
Higher Temperature ◽  
Film Annealing

A novel process for SiGe Core-Shell JAM Transistors Fabrication and thermal annealing effect on its electrical performance

2020 ◽  
Vol 1 (2) ◽  
Author(s):  
Ashish Kumar ◽  
Wen-Hsi Lee
Keyword(s):  
Process Condition ◽  
Subthreshold Swing ◽  
Electrical Performance ◽  
Core Shell ◽  
Electrical Characteristics ◽  
Thermal Budget ◽  
New Process ◽  
Comparable Performance ◽  
Higher Temperature ◽  
Film Annealing

 In this study, we fabricate Si/SiGe core-shell Junctionless accumulation mode (JAM)FinFET devices through a rapid and novel process with four main steps, i.e. e-beam lithography definition, sputter deposition, alloy combination annealing, and chemical solution etching. The height of Si core is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm. After finishing the fabrication of devices, we widely studied the electrical characteristics of poly Si/SiGe core-shell JAM FinFET transistors from a view of different Lg and Wch. A poly-Si/SiGe core -shell JAMFETs was successfully demonstrated and it also exhibits  a superior subthreshold swing of 81mV/dec and high on/off ratio > 105 when annealing for 1hr at 600°C. The thermal diffusion process condition for this study are 1hr at 600°C and 6hr at 700°C for comparison. The annealing condition at 700oC for 6 hours shows undesired electrical characteristics against the other. Results suggests that from over thermal budget causes a plenty of Ge to precipitate against to form SiGe thin film. Annealing JAMFETs at low temperature shows outstanding Subthreshold swing and better swing condition when compared to its counterpart i.e. at higher temperature. This new process can still fabricate a comparable performance to classical planar FinFET in driving current. 

Optimization of a Novel Micro-Hotplate for Gas Sensor

2013 ◽  
Vol 423-426 ◽  
pp. 2317-2320
Author(s):  
Chang Chun Li ◽  
Xiao Bo Zhang ◽  
Li Liu
Keyword(s):  
Temperature Distribution ◽  
Gas Sensor ◽  
Uniform Temperature ◽  
Si Substrate ◽  
Uniform Temperature Distribution ◽  
Sensor Sensitivity ◽  
Electrode Space ◽  
Higher Temperature ◽  
Simulation Results ◽  
Novel Design

A novel design of micro-hotplate is proposed for micro-structural gas sensor. The simulation results of ANSYS reveal that higher temperature and more uniform temperature distribution was achieved in the micro-hotplate when the thickness of SiO2, thickness of Si substrate, electrode width and electrode space were designed to be 100, 200, 20 and 230 μm, respectively. The new micro-hotplate is benefit for the improvement of sensor sensitivity.

A Novel Micro-Hotplate Designed for Micro-Gas Sensor

2013 ◽  
Vol 411-414 ◽  
pp. 1569-1572
Author(s):  
Ji Li ◽  
Xiao Bo Zhang ◽  
Li Liu
Keyword(s):  
Temperature Distribution ◽  
Gas Sensor ◽  
Uniform Temperature ◽  
Si Substrate ◽  
Original Design ◽  
Uniform Temperature Distribution ◽  
Micro Gas Sensor ◽  
Electrode Space ◽  
Higher Temperature ◽  
Simulation Results

A original design of micro-hotplate is proposed for micro-structural gas sensor. The simulation results of ANSYS reveal that higher temperature and more uniform temperature distribution was achieved in the micro-hotplate when the thickness of SiO2, thickness of Si substrate, electrode width and electrode space were designed to be 100, 200, 20 and 250 μm, respectively. The new micro-hotplate is beneficial to improving the sensor sensitivity.

Design, Simulation and Optimization of a New Micro-Structural Gas Sensor

2013 ◽  
Vol 677 ◽  
pp. 125-129
Author(s):  
Xiao Bo Zhang ◽  
Chang Bai Liu ◽  
Li Liu ◽  
Hao Shan ◽  
Lian Yuan Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Gas Sensor ◽  
Signal Interference ◽  
Si Substrate ◽  
Simulation And Optimization ◽  
Sensor Performance ◽  
Electrode Space ◽  
Higher Temperature ◽  
Measuring Signal ◽  
The Magnetic Field

Micro-structural gas sensor with a new kind of electrode is designed. Platinum filament is selected as gold electrodes, and SiO2 is used as the thermal and electricity insulation layer. The simulation results of ANSYS reveal that when the thickness of SiO2, thickness of Si substrate, electrode with and electrode space are 50, 250, 15 and 60 µm, respectively, the sensors can own higher temperature and uniform temperature distributing in the center. The magnetic field distribution is also analyzed by ANSYS, and the results show that the new electrodes can eliminate magnetic field from the heater on the measuring signal interference, which is benefit for the improvement of sensor performance.

scholarly journals UV Illumination Room-Temperature ZnO Nanoparticle Ethanol Gas Sensors

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Sheng-Po Chang ◽  
Kuan-Yu Chen
Keyword(s):  
Gas Sensor ◽  
Gas Sensors ◽  
Room Temperature ◽  
Uv Light ◽  
Light Illumination ◽  
Zno Nanoparticle ◽  
Uv Illumination ◽  
Potential Applications ◽  
Film Annealing ◽  
Nanoparticle Film

Zinc oxide (ZnO) nanoparticle gas sensor was formed by spin coating. We annealed the film at 400, 600, and 800°C for 1 hour in air to make gas sensor. The responses of gas sensor to ethanol with UV light illumination were investigated. It could be observed that the ZnO nanoparticle film annealing at 800°C has the highest sensitivity. It can be attributed to the defects of ZnO nanoparticle film annealing at 800°C much more than other annealing temperatures. The study shows that the ZnO nanoparticles have potential applications as RT ethanol sensors.

Design and Optimization Analysis of a Novel MEMS Micro-Hotplate for Gas Sensor

2013 ◽  
Vol 791-793 ◽  
pp. 1014-1017
Author(s):  
Xiao Bo Zhang ◽  
Chang Bai Liu ◽  
Li Liu ◽  
Yue He ◽  
Lian Yuan Wang
Keyword(s):  
Magnetic Field ◽  
Gas Sensor ◽  
Si Substrate ◽  
Electrode Structure ◽  
Optimization Analysis ◽  
Design And Optimization ◽  
Sensor Performance ◽  
Measurement Signal ◽  
Electrode Space ◽  
Higher Temperature

The paper presents a novel Si-substrated micro-hotplate for gas sensor. Use platinum filament as heater, SiO2 as thermal and electricity insulation. Through optimizing analysis, in order to make the gas sensor obtain perfect properties of higher temperature and uniform temperature distribution, the thickness of SiO2, thickness of Si substrate, electrode width and electrode space are designed to be 50, 250, 20 and 500 μm, respectively. Via the analysis of magnetic field distribution of the new gas sensor, the new electrode structure can eliminate the interference on the measurement signal from magnetic field, which is benefit for the improvement of sensor performance.

Nucleation of Disorder in Fe3Al Alloys

1967 ◽  
Vol 25 ◽  
pp. 312-313
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Antiphase Domain ◽  
Effect Of Temperature ◽  
Domain Structures ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Higher Temperature ◽  
The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

Application Of Electron Probe Analyses Of Minerals In Discussing The Relationship Between Ductile Deformation And Metamorphism

1990 ◽  
Vol 48 (2) ◽  
pp. 250-251
Author(s):  
Fan Guochuan ◽  
Sun Zhongshi
Keyword(s):  
Chemical Composition ◽  
Shear Deformation ◽  
Electron Probe ◽  
General Rule ◽  
Granulite Facies ◽  
Ductile Deformation ◽  
Higher Temperature ◽  
Ductile Shear ◽  
The Relationship ◽  
Ductile Shear Deformation

Under influence of ductile shear deformation, granulite facies mineral paragenesis underwent metamorphism and changes in chemical composition. The present paper discusses some changes in chemical composition of garnet in hypers thene_absent felsic gnesiss and of hypersthene in rock in early and late granulite facies undergone increasing ductile shear deformation .In garnet fetsic geniss, band structures were formed because of partial melting and resulted in zoning from massive⟶transitional⟶melanocrate zones in increasing deformed sequence. The electron-probe analyses for garnet in these zones are listed in table 1 . The Table shows that Mno, Cao contents in garnet decrease swiftly from slightly to intensely deformed zones.In slightly and moderately deformed zones, Mgo contents keep unchanged and Feo is slightly lower. In intensely deformed zone, Mgo contents increase, indicating a higher temperature. This is in accord with the general rule that Mgo contents in garnet increase with rising temperature.

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