Charge build-up and its reduction in plasma cleaning process

To solve the problems of low efficiency and high void rate in the process of the MEMS filter (die) attach and increase the strength of wire bonding between the die and microwave circuit board, plasma cleaning process was introduced in the micro-assembly process of the MEMS filter switch module. The spreading area of the solder melted on the copper was analyzed before and after the plasma cleaning process. Process parameters including plasma flow, radio frequency time and radio frequency power were optimized by the orthogonal test. It is demonstrated that the plasma cleaning process is effective to decrease the void rates in die attach and enhance the wire bonding strength, thus improve the reliability of the MEMS filter module micro-assembly.

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Real-time Monitoring and Control of Silicon Epitaxy Using Emission Fourier Transform Infrared Spectroscopy

MRS Proceedings ◽

10.1557/proc-324-365 ◽

1993 ◽

Vol 324 ◽

Author(s):

Z.H. Zhou ◽

H. Kim ◽

Rafael Reif

Keyword(s):

Fourier Transform ◽

Real Time ◽

Film Growth ◽

Hydrogen Plasma ◽

Fourier Transform Infrared ◽

Plasma Cleaning ◽

Cleaning Process ◽

Monitoring And Control ◽

Ir Radiation ◽

Ft Ir

AbstractReal-time epi-film thickness is measured by an Emission Fourier Transform Infrared Spectrometer (E/FT-IR). The E/FT-IR takes advantage of the heated wafer as the source of IR radiation. In our experiments, wafers were cleaned using in-situ ECR hydrogen plasma followed by film growth. The cleaning and deposition processes were monitored in real-time using the E/FT-IR technique. We have demonstrated the application of E/FT-IR for observing real-time growth rates and incubation times. Based on these real-time observations, the predeposition plasma cleaning process and the deposition process can be effectively monitored and controlled in real-time. Application of E/FT-IR in optimizing the predeposition hydrogen plasma cleaning process was demonstrated.

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Influence of rf Plasma in Plasma Cleaning Process on Properties of Thin Superconducting Nb3Ge Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.40 ◽

1985 ◽

Vol 24 (Part 1, No. 1) ◽

pp. 40-44 ◽

Cited By ~ 5

Author(s):

Yujiro Kato ◽

Horst Rogalla ◽

Bernd David

Keyword(s):

Rf Plasma ◽

Plasma Cleaning ◽

Cleaning Process

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Cu CONTAMINANT REMOVAL USING UV/O3 AND REMOTE HYDROGEN PLASMA

Surface Review and Letters ◽

10.1142/s0218625x02002282 ◽

2002 ◽

Vol 09 (01) ◽

pp. 255-259 ◽

Cited By ~ 4

Author(s):

KYUNSUK CHOI ◽

KWANG PYO HONG ◽

CHONGMU LEE

Keyword(s):

Exposure Time ◽

Process Parameters ◽

Hydrogen Plasma ◽

Optimum Process ◽

Process Conditions ◽

Plasma Cleaning ◽

Contaminant Removal ◽

Cleaning Process ◽

Cleaning Efficiency ◽

X Ray

Removal of Cu contaminants from Si wafer was carried out using remote hydrogen plasma (RHP) and UV/O 3 cleaning techniques. The concentration of Cu impurities on the wafer surface was monitored by TXRF (total reflection X-ray fluorescence) and XPS (X-ray photoelectron spectroscopy). Our results show that Cu impurities can be effectively removed by hydrogen plasma and UV/O 3 cleaning techniques, if it is performed under optimum process conditions. The optimum process parameters for the remote hydrogen plasma cleaning are the rf power of 20 W and the exposure time of 5 min. The optimum exposure time of the UV/O 3 cleaning for Cu impurity removal is 1 min. A two-step cleaning process composed of remote hydrogen plasma cleaning first and UV/O 3 cleaning next has been found to be more effective than a single UV/O 3 cleaning process, a single remote hydrogen plasma cleaning process, or a two-step cleaning process composed of UV/O 3 cleaning first and remote hydrogen plasma cleaning next. Cleaning efficiency is maximized at optimum process conditions where Cu contaminant removal effect and recontamination effect are traded off. Increasing the process parameters higher than the optimum values would decrease the cleaning efficiency.

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