Real-time Monitoring and Control of Silicon Epitaxy Using Emission Fourier Transform Infrared Spectroscopy

Real-time epi-film thickness is measured by an Emission Fourier Transform Infrared Spectrometer (E/FT-IR). The E/FT-IR takes advantage of the heated wafer as the source of IR radiation. In our experiments, wafers were cleaned using in-situ ECR hydrogen plasma followed by film growth. The cleaning and deposition processes were monitored in real-time using the E/FT-IR technique. We have demonstrated the application of E/FT-IR for observing real-time growth rates and incubation times. Based on these real-time observations, the predeposition plasma cleaning process and the deposition process can be effectively monitored and controlled in real-time. Application of E/FT-IR in optimizing the predeposition hydrogen plasma cleaning process was demonstrated.