Resonance frequency of ferromagnetic thin film controlled by rectangle antidot arrays

2015 ◽  
Author(s):  
X. J. Luo ◽  
P. Zhou ◽  
X. Wang ◽  
N. Zhang ◽  
L. Deng
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Antidot Arrays

Resonance Frequency of Ferromagnetic Thin Film Controlled by Rectangle Antidot Arrays

2015 ◽  
Vol 51 (11) ◽  
pp. 1-4 ◽  
Author(s):  
X. J. Luo ◽  
P. H. Zhou ◽  
X. Wang ◽  
J. L. Xie ◽  
L. J. Deng
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Antidot Arrays

Reliability and stability of thin-film amorphous silicon MEMS on glass substrates

2011 ◽  
Vol 1299 ◽  
Author(s):  
P. M. Sousa ◽  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Frequency Shift ◽  
Amorphous Silicon ◽  
Structural Damage ◽  
Chemical Vapor ◽  
Stability Study ◽  
Glass Substrates ◽  
Resonance Frequency Shift ◽  
Mems Resonators

ABSTRACTIn this work, we present a reliability and stability study of doped hydrogenated amorphous silicon (n+-a-Si:H) thin-film silicon MEMS resonators. The n+-a-Si:H structural material was deposited using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and processed using surface micromachining at a maximum deposition temperature of 110 ºC. n+-a-Si:H resonant bridges can withstand the industry standard of 1011 cycles at high load with no structural damage. Tests performed up to 3x1011 cycles showed a negligible level of degradation in Q during the entire cycling period which in addition shows the high stability of the resonator. In measurements both in vacuum and in air a resonance frequency shift which is proportional to the number of cycles is established. This shift is between 0.1 and 0.4%/1x1011 cycles depending on the applied VDC. When following the resonance frequency in vacuum during cyclic loading, desorption of air molecules from the resonator surface is responsible for an initial higher resonance frequency shift before the linear dependence is established.

scholarly journals Fabrication and Characteristic of a Double Piezoelectric Layer Acceleration Sensor Based on Li-Doped ZnO Thin Film

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 331 ◽  
Author(s):  
Chunpeng Ai ◽  
Xiaofeng Zhao ◽  
Sen Li ◽  
Yi Li ◽  
Yinnan Bai ◽  
...  
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Piezoelectric Layer ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Test Results ◽  
Acceleration Sensor ◽  
Piezoelectric Layers ◽  
Mems Technology ◽  
Doped Zno

In this paper, a double piezoelectric layer acceleration sensor based on Li-doped ZnO (LZO) thin film is presented. It is constituted by Pt/LZO/Pt/LZO/Pt/Ti functional layers and a Si cantilever beam with a proof mass. The LZO thin films were prepared by radio frequency (RF) magnetron sputtering. The composition, chemical structure, surface morphology, and thickness of the LZO thin film were analyzed. In order to study the effect of double piezoelectric layers on the sensitivity of the acceleration sensor, we designed two structural models (single and double piezoelectric layers) and fabricated them by using micro-electro-mechanical system (MEMS) technology. The test results show that the resonance frequency of the acceleration sensor was 1363 Hz. The sensitivity of the double piezoelectric layer was 33.1 mV/g, which is higher than the 26.1 mV/g of single piezoelectric layer sensitivity, both at a resonance frequency of 1363 Hz.

An In Situ Measuring Method for Young's Modulus of a MEMS Film Base on Resonance Frequency

2012 ◽  
Vol 503 ◽  
pp. 308-311
Author(s):  
Han Chen ◽  
Hua Rong
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Young’S Modulus ◽  
Circular Plate ◽  
Material Property ◽  
Young's Modulus ◽  
Measuring Method ◽  
Test Structure ◽  
Film Research

Large-scale measurement of material property is not suit for the MEMS thin-film. Research the in-situ measuring method for material property of the MEMS thin-film is urgently. A center-anchored circular plate is adopted as the test structure here. The resonance frequency of the circular plate is measured to extract the Young’s modulus of a MEMS thin-film. The accuracy of this non-contact in-situ measuring method has been verified by CoventorWare. The inferences of the stress gradient have been analyzed. The advantages of the test structure and the measuring method present here also have been discussed.

Adsorption-Induced Failure Modes of Thin-Film Resonators

2001 ◽  
Vol 695 ◽  
Author(s):  
R. Kazinczi ◽  
J.R. Mollinger ◽  
A. Bossche
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Failure Modes ◽  
Surface Oxidation ◽  
Ambient Air ◽  
Mems Devices ◽  
Initial Drop ◽  
The Stability ◽  
Thin Film Resonators ◽  
Stiffening Effect

ABSTRACTThe mechanical and resonant properties of thin film resonators are influenced by the surrounding environment. Adsorption- and surface oxidation-induced stiffening effect was observed on silicon nitride and silicon carbide cantilever beams. The resonance frequency increased logarithmically in time upon exposure to ambient air. The variations of surface stress and spring constant of the SiNx cantilever beam were calculated. Further oxynitride formation on the surface increased the stability of the resonators. The shock response of the structures was studied in various environments. The resonance frequency abruptly dropped due to cracking of the absorbed surface layer, than recovered logarithmically. The initial drop and the recovery rate is environment dependant. Humidity increased, while argon and nitrogen rich environments mitigated the degrading effects. The SiCx is more inert to the environmental effects and proved to be a promising candidate as structural material in resonant MEMS devices.

scholarly journals Effect of Low-Frequency Alternative-Current Magnetic Susceptibility inNi80Fe20Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Yuan-Tsung Chen ◽  
S. H. Lin ◽  
Y. C. Lin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Susceptibility ◽  
Resonance Frequency ◽  
Low Frequency ◽  
Annealing Treatment ◽  
Face Centered Cubic ◽  
Low Frequencies ◽  
Post Annealing ◽  
Alternative Current

X-ray diffraction (XRD) results indicate that the NiFe thin films had a face-centered cubic (FCC) structure. Post-annealing treatment increased the crystallinity of NiFe films over those at room temperature (RT), suggesting that NiFe crystallization yields FCC (111) texturing. Post-annealing treatments increase crystallinity over that obtained at RT. This paper focuses on the maximum alternative-current magnetic susceptibility(χac)value of NiFe thin films with resonance frequency(fres)at low frequencies from 10 Hz to 25000 Hz. These results demonstrate that theχacof NiFe thin films increased with post-annealing treatment and increasing thickness. The NiFe (111) texture suggests that the relationship between magneto-crystalline anisotropy and the maximumχacvalue with optimal resonance frequency(fres)increased spin sensitivity at optimalfres. The results obtained under the three conditions revealed that the maximumχacvalue and optimalfresof a 1000 Å-thick NiFe thin film are 3.45 Hz and 500 Hz, respectively, following postannealing atTA=250°C for 1 h. This suggests that a 1000 Å NiFe thin film post-annealed atTA=250°C is suitable for gauge sensor and transformer applications at low frequencies.

Fabrication and Characterization of Annular-Shaped Piezoelectric Micromachined Ultrasonic Transducer Mounted with Pb(Zr,Ti)O3-Based Monocrystalline Thin Film

2021 ◽  
Author(s):  
Ziyi Liu ◽  
Shinya Yoshida ◽  
Shuji Tanaka
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
High Performance ◽  
Figure Of Merit ◽  
Ultrasonic Transducer ◽  
Device Fabrication ◽  
Static Displacement ◽  
Standard Design ◽  
Displacement Sensitivity

Abstract In this study, we propose an annular-shaped piezoelectric micromachined ultrasonic transducer (pMUT) based on a Pb(Zr,Ti)O3-based monocrystalline thin film. This pMUT is expected to increase the resonance frequency while maintaining displacement sensitivity, making it superior to an island-shaped pMUT, which is a conventional design. To demonstrate the validity of this assumption, annular- and island-shaped pMUTs with a 60-μm-diameter diaphragm were prototyped and characterized. As a result, the annular-shaped pMUT exhibited a resonance frequency of 11.9 MHz, a static displacement sensitivity of 2.35 nm/V and a transmitting figure-of-merit (FOM) of 28 nm∙MHz/V. On the other hand, the island-shaped pMUT exhibited a resonance frequency of 9.6 MHz and a static displacement of 2.5 nm/V and an FOM of 24 nm∙MHz/V. Therefore, the annular-shaped pMUT was experimentally demonstrated to provide a higher FOM compared to the island-shaped pMUT. In addition, the annular-shaped pMUT with the optimal dimensions is found to be able to keep a relatively large fabrication margin. This is an advantageous point for the practical device fabrication. We believe this design has a potential to become a standard design for high-performance pMUT devices.

Microtouch-Sensor Array Fabricated by Hydrothermal Method

2002 ◽  
Vol 14 (6) ◽  
pp. 633-639
Author(s):  
Guiryong Kwon ◽  
◽  
Fumihito Arai ◽  
Toshio Fukuda ◽  
Kouichi ltoigawa ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Resonance Frequency ◽  
Hydrothermal Method ◽  
Sensor Array ◽  
Impedance Change ◽  
Touch Sensor ◽  
Pzt Thin Film ◽  
Before And After ◽  
Basic Features

We propose a microtouch-sensor array applicable in high-temperature environments. PZT thin film was fabricated on a Ti substrate by a hydrothermal method and electrodes were deposited on it to form the sensor and actuator. The actuator is driven at a resonance frequency of 1.045 [kHz] and actuating voltage is low at ±5[V]. The sensor detects impedance change before and after contact. The sensor is simple and easy to miniaturize and works at temperature up to 82°C. This sensor can be used as an automobile control touch-sensor pad instead of conventional capacitive touch pads because it is robust against high temperature. We detail the sensor's basic features.

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