Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices

Author(s):  
A. Sarua ◽  
J. Pomeroy ◽  
M. Kuball ◽  
A. Falk ◽  
G. Albright ◽  
...  
Author(s):  
C. Monachon ◽  
M.S. Zielinski ◽  
D. Gachet ◽  
S. Sonderegger ◽  
S. Muckenhirn ◽  
...  

Abstract Quantitative cathodoluminescence (CL) microscopy is a new optical spectroscopy technique that measures electron beam-induced optical emission over large field of view with a spatial resolution close to that of a scanning electron microscope (SEM). Correlation of surface morphology (SE contrast) with spectrally resolved and highly material composition sensitive CL emission opens a new pathway in non-destructive failure and defect analysis at the nanometer scale. Here we present application of a modern CL microscope in defect and homogeneity metrology, as well as failure analysis in semiconducting electronic materials


2015 ◽  
Vol 28 (2) ◽  
pp. 205-212 ◽  
Author(s):  
Giovanni Breglio ◽  
Andrea Irace ◽  
Luca Maresca ◽  
Michele Riccio ◽  
Gianpaolo Romano ◽  
...  

The aim of this paper is to give a presentation of the principal applications of Infrared Thermography for analysis and testing of electrondevices. Even though experimental characterization could be carried out on almost any electronic devices and circuits, here IR Thermography for investigation of power semiconductor devices is presented. Different examples of functional and failure analysis in both transient and lock-in modes will be reported.


2016 ◽  
Vol 33 (2) ◽  
pp. 94-101
Author(s):  
Kamil Janeczek ◽  
Aneta Arazna ◽  
Konrad Futera ◽  
Grazyna Koziol

Purpose The aim of this paper is to present non-destructive and destructive methods of failure analysis of epoxy moulded IC packages on the example of power MOSFETs in SOT-227 package. Design/methodology/approach A power MOSFET in SOT-227 package was examined twice using X-ray inspection, at first as the whole component to check if it is damaged and then after removing the upper part of package by mechanical grinding. The purpose of the second X-ray inspection was to prepare images for estimation of the total number and approximate location of voids in soft solder layers. Finally, power MOSFETs were subjected to decapsulation process using a concentrated sulphuric acid to verify existence of damage areas noticed during X-ray analysis and to observe other possible failures such as cracks in aluminium metallization or wires deformation. Findings X-ray analysis was revealed to be adequate technique to detect damage (e.g. meltings) in power MOSFETs in SOT-227 package, but only when tested components were analysed in the side view. This type of analysis combined with a graphic software is also suitable for voids estimation in soft solder layers. Moreover, it was found that a single acid (concentrated sulphuric acid) at elevated temperature can be successfully used for decapsulation of power MOSFETs in SOT-227 package without damage of aluminium metallization and aluminium wires. Such decapsulation process enables analysis of defects in wire, die and package materials. Research limitations/implications Further investigations are required to examine if the presented methods of failures analysis can be used for other types of components (e.g. high power resistors) in similar packages. Practical/implications The described methods of failure analysis can find application in electronic industry to select components which are free of damage and in effect which allow to produce high reliable devices. Apart from it, the presented method is applicable to evaluate reasons of improper work of tested electronic devices and to identify faked components. Originality/value This paper contains valuable information for research and technical staff involved in the assessment of electronic devices who needs practical methods of failure analysis of epoxy moulded IC packages.


Author(s):  
Alex Davila-Frias ◽  
Val Marinov ◽  
Om Prakash Yadav ◽  
Yuriy Atanasov

Abstract Accelerated life testing (ALT) has been a common choice to study the effects of environmental stresses on flexible hybrid electronics (FHE), a promising technology to produce flexible electronic devices. Nevertheless, accelerated degradation testing (ADT) has proven to be a more effective approach, which does not require failure occurrences, allowing shorter testing times. Since FHE devices are expected to be highly reliable, ADT provides useful information in the form of degradation data for further analysis without actual failure data. In this paper, we present the design and experimental setup of ADT for FHE considering two stress factors simultaneously. We use daisy-chain resistance as a measurable degradation characteristic to periodically monitor the degradation of FHE products under accelerated stress conditions. Two stress factors, temperature and humidity, are considered and ADT was carried out considering four combinations of temperature and humidity simultaneously. Failure analysis was performed on failed units to investigate the failure process and location of the failure. The ADT data was used to fit in the appropriate mathematical degradation model representing the failure process. The data analysis showed faster degradation paths for higher stress combinations. Finally, we present insights and further research opportunities to expand the work.


1997 ◽  
Vol 468 ◽  
Author(s):  
C. Huang ◽  
S. Mitha ◽  
J. W. Erickson ◽  
R. Clark-Phelps ◽  
Jack Sheng ◽  
...  

ABSTRACTSIMS analysis was applied to the characterization of GaN, AlGaN/GaN and InGaN/GaN grown by MOCVD. Such characterization enables the control of purity and doping, and the determination of growth rate and alloy composition. The analysis can be performed on finished optoelectronic and electronic devices and this makes SIMS technique a powerful tool for failure analysis, reverse engineering, and concurrent engineering.


Author(s):  
Tyler Pendleton ◽  
Luke Hunter ◽  
S. H. Lau

Abstract Conventional microCTs or 3D x-ray upgrades from existing 2D x-ray systems have two major drawbacks when they are used for failure analysis of advanced packages: Insufficient resolution to image small (1 to 5 microns) materials and the lack of imaging contrast to visualize cracks, whiskers, and defects within low Z materials. This paper discusses some of the failure analysis (FA) case studies of wireless modules using a high resolution micro x-ray CT (XCT). These examples show the value of high resolution XCT as a novel approach to some common package level defects, including some interesting case examples, where failure mechanisms have been uncovered which could not have been done, using conventional means. The non-invasive FA technique for RF modules technique has been shown to dramatically improve the FA engineers' chances of identifying defects over conventional 2D x-rays and avoid the need for physical and tedious cross sectioning of these devices.


Author(s):  
Bill Cardoso

Abstract The drive towards miniaturization has created increasing challenges to the overall failure analysis and quality inspection of electronic devices. This trend has equally challenged the image quality of x-ray inspection systems – engineers need to see more details in each inspection. Image quality is paramount to the ability of making actionable decisions on the information acquired from an x-ray machine. Previous generations of x-ray technologies have focused on hardware improvements – better x-ray sources and better x-ray sensors. Although further improvements can still be achieved in hardware, our focus will be on the latest wave of technology breakthroughs and innovation in radiography systems: algorithms.


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