Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition

2009 ◽  
Author(s):  
Zhou Tao ◽  
Liu Hongxia ◽  
Kuang Qianwei ◽  
Cai Naiqiong ◽  
Hao Yue ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Structural Properties ◽  
Atomic Layer ◽  
Gate Stack ◽  
Layer Deposition ◽  
High K

scholarly journals Atomic Layer Deposition (ALD) of Metal Gates for CMOS

2019 ◽  
Vol 9 (11) ◽  
pp. 2388 ◽  
Author(s):  
Chao Zhao ◽  
Jinjuan Xiang
Keyword(s):  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Material Selection ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Gate Stack ◽  
Short Channel ◽  
Metal Gates ◽  
Layer Deposition

The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K

Growth conditions and structural properties as limiting factors of electrical parameters of ZnO thin films grown by Atomic Layer Deposition with diethylzinc and water precursors

2010 ◽  
Vol 7 (6) ◽  
pp. 1550-1552 ◽  
Author(s):  
Tomasz A. Krajewski ◽  
Grzegorz Łuka ◽  
Łukasz Wachnicki ◽  
Elżbieta Guziewicz ◽  
Marek Godlewski ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Structural Properties ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Limiting Factors ◽  
Zno Thin Films ◽  
Electrical Parameters ◽  
Layer Deposition

Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-k Dielectrics on Graphene

2013 ◽  
Vol 5 (22) ◽  
pp. 11515-11519 ◽  
Author(s):  
Woo Cheol Shin ◽  
Jae Hoon Bong ◽  
Sung-Yool Choi ◽  
Byung Jin Cho
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Functionalized Graphene ◽  
Layer Deposition ◽  
High K

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

2011 ◽  
Author(s):  
Y. Y. Fu ◽  
A. D. Li ◽  
X. J. Liu ◽  
X. F. Li ◽  
D. Wu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Flash Memory ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

High-k dielectrics grown by atomic layer deposition

2003 ◽  
pp. 327-348 ◽  
Author(s):  
M.D. Groner ◽  
S.M. George
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

High-k ZrO2 dielectric thin films on GaAs semiconductor with reduced regrowth of native oxides by atomic layer deposition

2013 ◽  
Vol 583 ◽  
pp. 74-79 ◽  
Author(s):  
R.B. Konda ◽  
C. White ◽  
J. Smak ◽  
R. Mundle ◽  
M. Bahoura ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Thin Films ◽  
Native Oxides ◽  
Layer Deposition ◽  
High K
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