Compact very high voltage CMOS compatible bipolar silicon-on-insulator transistor

2002 ◽  
Author(s):  
A. Litwin ◽  
T. Arnborg
Keyword(s):  
High Voltage ◽  
Silicon On Insulator ◽  
Cmos Compatible ◽  
Very High

scholarly journals Analysis of Charge Pump Topologies for High Voltage Mobile Microphone Applications

2021 ◽  
Vol 27 (2) ◽  
pp. 31-39
Author(s):  
Jakob K. Toft ◽  
Ivan H. H. Jorgensen
Keyword(s):  
Power Consumption ◽  
Mechanical System ◽  
High Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Micro Electro Mechanical System ◽  
Silicon On Insulator ◽  
High Bias ◽  
Low Supply Voltage ◽  
Very High

This paper presents a novel analysis of charge pump topologies for very high voltage capacitive drive micro electro-mechanical system microphones. For the application, the size and power consumption are sought to be minimized, and a voltage gain of 36 is achieved from a 5 V supply. The analysis compares known charge pump topologies, taking into consideration on resistance of transistors and parasitic capacitances of transistors and capacitors in a 180 nm silicon-on-insulator process. The analysis finds that the Pelliconi charge pump topology is optimal for generating very high bias voltages for micro electro-mechanical system microphones from a low supply voltage when the power consumption and area are limited by the application.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

scholarly journals Portable DC Supply Based on SiC Power Devices for High-Voltage Marx Generator

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 313
Author(s):  
Jacek Rąbkowski ◽  
Andrzej Łasica ◽  
Mariusz Zdanowski ◽  
Grzegorz Wrona ◽  
Jacek Starzyński
Keyword(s):  
High Voltage ◽  
Specific Area ◽  
Input Voltage ◽  
Marx Generator ◽  
Power Devices ◽  
Laboratory Setup ◽  
High Voltage Gain ◽  
Main Components ◽  
Two Stages ◽  
Very High

The paper describes major issues related to the design of a portable SiC-based DC supply developed for evaluation of a high-voltage Marx generator. This generator is developed to be a part of an electromagnetic cannon providing very high voltage and current pulses aiming at the destruction of electronics equipment in a specific area. The portable DC supply offers a very high voltage gain: input voltage is 24 V, while the generator requires supply voltages up to 50 kV. Thus, the system contains two stages designed on the basis of SiC power devices operating with frequencies up to 100 kHz. At first, the input voltage is boosted up to 400 V by a non-isolated double-boost converter, and then a resonant DC-DC converter with a special transformer elevates the voltage to the required level. In the paper, the main components of the laboratory setup are presented, and experimental results of the DC supply and whole system are also shown.

Proposal of New Interconnection Technique for Very High-Voltage IC's

1996 ◽  
Vol 35 (Part 1, No. 11) ◽  
pp. 5655-5663 ◽  
Author(s):  
Tatsuhiko Fujihira ◽  
Yukio Yano ◽  
Shigeyuki Obinata ◽  
Naoki Kumagai ◽  
Kenya Sakurai
Keyword(s):  
High Voltage ◽  
Very High

Defect Engineering for SIMOX Processing

2007 ◽  
Vol 131-133 ◽  
pp. 339-344 ◽  
Author(s):  
Reinhard Kögler ◽  
A. Mücklich ◽  
W. Anwand ◽  
F. Eichhorn ◽  
Wolfgang Skorupa
Keyword(s):  
Silicon On Insulator ◽  
Oxide Growth ◽  
Defect Engineering ◽  
Promising Technique ◽  
Crucial Point ◽  
Vacancy Defects ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
Very High ◽  
Established Technique

SIMOX (Separation-by-Implantation-of-Oxygen) is an established technique to fabricate silicon-on-insulator (SOI) structures by oxygen ion implantation into silicon. The main problem of SIMOX is the very high oxygen ion fluence and the related defects. It is demonstrated that vacancy defects promote and localize the oxide growth. The crucial point is to control the distribution of vacancies. Oxygen implantation generates excess vacancies around RP/2 which act as trapping sites for oxide growth outside the region at the maximum concentration of oxygen at RP. The introduction of a narrow cavity layer by He implantation and subsequent annealing is shown to be a promising technique of defect engineering. The additional He implant does not initiate oxide growth in the top-Si layer of SOI.

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

A Novel Latching Relay Fabricated Using an Oxide Molded Tungsten Process

2005 ◽  
Vol 872 ◽  
Author(s):  
J.G. Fleming ◽  
Michael Baker ◽  
David Luck
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Tensile Stress ◽  
Vapor Deposition ◽  
Chemical Mechanical Polishing ◽  
Chemical Vapor ◽  
Metal Contacts ◽  
Cmos Compatible ◽  
Mems Device ◽  
Very High

AbstractIn this paper we describe an oxide molded tungsten process applied to the fabrication of a novel latching relay. The steps in the process are: deposition of a sacrificial oxide, patterning of the oxide, filling of the resulting mold with a blanket film of tungsten using chemical vapor deposition (CVD), and then the removal and planarization of excess tungsten through chemical mechanical polishing (CMP). The process for the incorporation of dielectric isolation has also been developed. The resulting tungsten structures are under high tensile stress, which appears to be compensated in process by the compressive stress of the oxide mold. All the steps are low temperature and the entire process is backend CMOS compatible. This process has been used to fabricate a latching relay which relies on the internal stress of the tungsten and always generates force in a pulling mode. Parts have been successfully fabricated and tested, the devices generate very high forces for a MEMS device and give reasonable contact resistances even without noble metal contacts.

4H-SIC Dmosfets for High Frequency Power Switching Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
High Speed ◽  
High Performance ◽  
High Frequency Power ◽  
Power Devices ◽  
Power Switching ◽  
High Speed Switching ◽  
Unipolar Devices ◽  
Very High ◽  
Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

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