Characterization of silicon avalanche photodiode in term of breakdown voltage and leakage current

Being ready-to-detect over a certain portion of time makes the time-gated single-photon avalanche diode (SPAD) an attractive candidate for low-noise photon-counting applications. A careful SPAD noise and performance characterization, however, is critical to avoid time-consuming experimental optimization and redesign iterations for such applications. Here, we present an extensive empirical study of the breakdown voltage, as well as the dark-count and afterpulsing noise mechanisms for a fully integrated time-gated SPAD detector in 0.35-μm CMOS based on experimental data acquired in a dark condition. An “effective” SPAD breakdown voltage is introduced to enable efficient characterization and modeling of the dark-count and afterpulsing probabilities with respect to the excess bias voltage and the gating duration time. The presented breakdown and noise models will allow for accurate modeling and optimization of SPAD-based detector designs, where the SPAD noise can impose severe trade-offs with speed and sensitivity as is shown via an example.

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Research on the leakage current at sidewall of mesa Ge/Si avalanche photodiode

AIP Advances ◽

10.1063/5.0054242 ◽

2021 ◽

Vol 11 (7) ◽

pp. 075320

Author(s):

Junqin Zhang ◽

Hongmei Lin ◽

Meng Liu ◽

Yintang Yang

Keyword(s):

Leakage Current ◽

Avalanche Photodiode

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Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

MRS Proceedings ◽

10.1557/proc-742-k1.1 ◽

2002 ◽

Vol 742 ◽

Cited By ~ 1

Author(s):

T. Kimoto ◽

K. Hashimoto ◽

K. Fujihira ◽

K. Danno ◽

S. Nakamura ◽

...

Keyword(s):

Epitaxial Growth ◽

Schottky Barrier ◽

Breakdown Voltage ◽

Doping Concentration ◽

Schottky Barrier Diodes ◽

Homoepitaxial Growth ◽

Nitrogen Incorporation ◽

Impurity Doping ◽

Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

MRS Proceedings ◽

10.1557/proc-391-327 ◽

1995 ◽

Vol 391 ◽

Author(s):

W.F. Mcarthur ◽

K.M. Ring ◽

K.L. Kavanagh

Keyword(s):

Leakage Current ◽

Diffusion Barrier ◽

Depth Profiling ◽

Electrical Characterization ◽

Implantation Dose ◽

Cu Metallization ◽

Reverse Leakage Current ◽

Transmission Electron ◽

Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

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Microstructure and Electrical Properties of ZnO-Pr6O11-Dy2O3-Based Varistor Ceramics Doped with La2O3

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.336-338.680 ◽

2007 ◽

Vol 336-338 ◽

pp. 680-683

Author(s):

Jing Nan Cai ◽

Yuan Hua Lin ◽

Rong Juan Zhao ◽

Ce Wen Nan ◽

Jin Liang He

Keyword(s):

Rare Earth ◽

Phase Composition ◽

Electrical Properties ◽

Rare Earth Elements ◽

Leakage Current ◽

Breakdown Voltage ◽

Intergranular Phase ◽

Ceramic Method ◽

Sem Micrographs ◽

Ceramic Samples

ZnO-Pr6O11-Dy2O3-based varistor ceramics doped with 0~1.5 mol% La2O3 were fabricated by a conventional ceramic method. All the samples were sintered at 1350 oCfor 2 h. The phase composition and microstructure of the ceramic samples have been investigated by XRD, SEM and EDS. The results of SEM micrographs indicated that the La2O3 additives can promote ZnO grain’s growth, and the rare earth elements dispersed mainly in the intergranular phase observed by EDS. The electrical properties of the samples determined by the V-I curves revealed that the breakdown voltage of samples decreases from 508 V/mm to about 100 V/mm with the increase of La2O3, and the nonlinear exponent also decreases from 20.2 to 13.2. The typical leakage current is about 10.2 μA for the sample doped with 0.5 mol% La2O3.

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Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

IEEE Transactions on Electron Devices ◽

10.1109/16.824744 ◽

2000 ◽

Vol 47 (3) ◽

pp. 650-652 ◽

Cited By ~ 2

Author(s):

C.H. Ling ◽

C.H. Ang ◽

D.S. Ang

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

X Ray ◽

Thin Gate Oxide

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Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

MRS Proceedings ◽

10.1557/proc-1071-f03-05 ◽

2008 ◽

Vol 1071 ◽

Author(s):

Koji Aizawa

Keyword(s):

Leakage Current ◽

Vinylidene Fluoride ◽

Ferroelectric Properties ◽

Hysteresis Loops ◽

Tio2 Films ◽

Gate Leakage Current ◽

Poly Vinylidene Fluoride ◽

Doped Zno ◽

Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

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