An accelerated super resolve stood on manufactured edge component and an adaptive leclerc function

Author(s):  
Vorapoj Patanavijit ◽  
Kornkamol Thakulsukanant
Keyword(s):  
Author(s):  
Y. Ishida ◽  
H. Ishida ◽  
K. Kohra ◽  
H. Ichinose

IntroductionA simple and accurate technique to determine the Burgers vector of a dislocation has become feasible with the advent of HVEM. The conventional image vanishing technique(1) using Bragg conditions with the diffraction vector perpendicular to the Burgers vector suffers from various drawbacks; The dislocation image appears even when the g.b = 0 criterion is satisfied, if the edge component of the dislocation is large. On the other hand, the image disappears for certain high order diffractions even when g.b ≠ 0. Furthermore, the determination of the magnitude of the Burgers vector is not easy with the criterion. Recent image simulation technique is free from the ambiguities but require too many parameters for the computation. The weak-beam “fringe counting” technique investigated in the present study is immune from the problems. Even the magnitude of the Burgers vector is determined from the number of the terminating thickness fringes at the exit of the dislocation in wedge shaped foil surfaces.


2018 ◽  
Vol 51 (5) ◽  
pp. 1372-1377 ◽  
Author(s):  
Hirotaka Yamaguchi ◽  
Akito Kuramata

Planar defects in (\overline{2}01)-oriented β-Ga2O3 wafers were studied using X-ray topography. These planar defects were rectangular with dimensions of 50–150 µm, and the X-ray topography analysis revealed that they were stacking faults (SFs) enclosed by a single partial dislocation loop on the (\overline{2}01) plane. The SF formation was found to be supported by a unique structural feature of the (\overline{2}01) plane as a slip plane; the (\overline{2}01) plane consists of close-packed octahedral Ga and O layers, allowing slips to form SFs. Vacancy arrays along the b axis in the octahedral Ga layer reduce the self-energy of the edge component in the partial dislocation extending along the b axis. It is speculated that the SFs occur during the crystal growth process for unknown reasons and then recover owing to elastic instability after initially increasing in size as crystal growth proceeds. Based on this analysis, a structural model for the SFs is proposed.


2014 ◽  
Vol 40 (3) ◽  
pp. 273-276
Author(s):  
熊上导 XIONG Shangdao ◽  
易凡 YI Fan ◽  
何超 HE Chao ◽  
严赵军 YAN Zhaojun

Sensors ◽  
2020 ◽  
Vol 20 (20) ◽  
pp. 5729 ◽  
Author(s):  
Ismail Butun ◽  
Alparslan Sari ◽  
Patrik Österberg

The proliferation of the Internet of Things (IoT) caused new application needs to emerge as rapid response ability is missing in the current IoT end-devices. Therefore, Fog Computing has been proposed to be an edge component for the IoT networks as a remedy to this problem. In recent times, cyber-attacks are on the rise, especially towards infrastructure-less networks, such as IoT. Many botnet attack variants (Mirai, Torii, etc.) have shown that the tiny microdevices at the lower spectrum of the network are becoming a valued participant of a botnet, for further executing more sophisticated attacks against infrastructural networks. As such, the fog devices also need to be secured against cyber-attacks, not only software-wise, but also from hardware alterations and manipulations. Hence, this article first highlights the importance and benefits of fog computing for IoT networks, then investigates the means of providing hardware security to these devices with an enriched literature review, including but not limited to Hardware Security Module, Physically Unclonable Function, System on a Chip, and Tamper Resistant Memory.


2018 ◽  
Vol 11 (6) ◽  
pp. 061002 ◽  
Author(s):  
Nobuhiko Kokubo ◽  
Yosuke Tsunooka ◽  
Fumihiro Fujie ◽  
Junji Ohara ◽  
Kazukuni Hara ◽  
...  

2008 ◽  
Vol 600-603 ◽  
pp. 357-360 ◽  
Author(s):  
Yi Chen ◽  
Xian Rong Huang ◽  
Ning Zhang ◽  
Michael Dudley ◽  
Joshua D. Caldwell ◽  
...  

Electron-hole recombination activated Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations have been studied in 4H-SiC epitaxial layers using synchrotron x-ray topography. The bounding partials appear as white stripes or narrow dark lines in back-reflection X-ray topographs recorded using the basal plane reflections. Such contrast variations are attributable to the defocusing/focusing of the diffracted X-rays due to the edge component of the partial dislocations, which creates a convex/concave distortion of the basal planes. Simulation results based on the ray-tracing principle confirm our argument. The sign of the partial dislocations can be subsequently determined.


1988 ◽  
Vol 133 ◽  
Author(s):  
G. Dirras ◽  
P. Beauchamp ◽  
P. Veyssière

ABSTRACTβ-brass single crystals oriented along <001> were deformed between room temperature and 300°C. The deformation microstructure and dissociation properties were studied by transmission electron microscopy under weak-beam imaging conditions.Whatever the deformation temperature, superdislocations with <111> Burgers vector and strong edge component dominate within the microstructure. In addition, below the temperature of the flow stress peak (≈ 250°C), the density of screw relative to mixed superdislocations decreases as straining temperature increases. Dissociation does not always occur on the slip plane neither does it proceed exclusively by glide, even in samples deformed at 100°C.


2019 ◽  
Vol 23 (4) ◽  
pp. 189-192
Author(s):  
Naw Jacklin Nyunt ◽  
Yosuke Sugiura ◽  
Tetsuya Shimamura

2007 ◽  
Vol 26-28 ◽  
pp. 1097-1100 ◽  
Author(s):  
Wei Zhang ◽  
Se Ahn Song ◽  
Hong Sik Jeong ◽  
Jin Gyu Kim ◽  
Youn Joong Kim

Characteristic 60° dislocations occurred in hexagonal phase of Ge2Sb2Te5 thin foil cooled from 500°C to room temperature in a high voltage transmission electron microscope. The Burgers vector of dislocation was identified as 1/ 24 < 9902 > which is the edge component of 1 3 < 2110 > projected on the (1120) lattice plane. The dislocation resulted from the cooling-induced stress/strain in the Ge2Sb2Te5 alloy.


1993 ◽  
Vol 308 ◽  
Author(s):  
Y. Chen ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
J.F. Klem ◽  
J.Y. Tsao

ABSTRACTTransmission electron microscopy is applied to investigate the effect of post-annealing on misfit dislocations in an In0.2Ga0.8As/GaAs(001) heterostructure. An orthogonal array of 60º dislocations along [110] and [110] directions was observed in the interfaces of the samples grown by MBE at 520 ºC. When the as-grown samples were annealed at temperatures ranging from 600 to 800 ºC, the 60º dislocations were gradually reoriented by dislocation reactions occurring at the 90º intersections followed by nonconservative motion driven by dislocation line tension and the residual elastic misfit strain. The final result of this process was a dislocation array lying along [100] and [010] directions. The reoriented u=<100> dislocation has a Burgers vector , which is the same as that of 60º dislocation, but the edge component of its Burgers vector in the (001) interfacial plane is larger than that of 60º dislocation by a factor of , resulting in a greater contribution to elastic strain relaxation. This nonconservative reorientation of 60º dislocations to form the u=<100> dislocations represents a new strain relaxation mechanism in diamond or zinc blende semiconductor heterostructures.


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