Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
2019 ◽
Vol 40
(8)
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pp. 1245-1248
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2020 ◽
Vol 21
(3)
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pp. 339-347
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2016 ◽
Vol 59
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pp. 30-36
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2012 ◽
Vol 229-231
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pp. 824-827
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2015 ◽
Vol 4
(9)
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pp. M69-M72
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Keyword(s):