New low-voltage low-power VM All-Pass Filter using Current Follower with non-unity gain

2014 ◽  
Author(s):  
Norbert Herencsar ◽  
Jaroslav Koton ◽  
Kamil Vrba ◽  
Shahram Minaei ◽  
Izzet Cem Goknar
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Pass Filter ◽  
Current Follower ◽  
Unity Gain

scholarly journals A Low-Power, High-Gain Amplifier with Rail-to-Rail Operating Capability: Applications to Biomedical Signal Processing

2021 ◽  
Vol 58 (1) ◽  
pp. 71-76
Author(s):  
Hassan Faraji Baghtash ◽  
Rasoul Pakdel
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Process Variations ◽  
High Gain ◽  
Biomedical Signal Processing ◽  
Noise Power ◽  
Well Performance ◽  
Subthreshold Region ◽  
Rail To Rail ◽  
Unity Gain

low-voltage, low-power, rail-to-rail, two-stage trans-conductance amplifier is presented. The structure exploits body-driven transistors, configured in folded-cascode structure. To reduce the power consumption, the transistors are biased in the subthreshold region. The Specter RF simulation results which are conducted in TSMC 180nm CMOS standard process proves the well-performance of the proposed structure. The performance of the proposed structure against process variations is checked through process corners and Monte Carlo simulations. The results prove the robustness of the proposed amplifier against process uncertainties. Some important specifications of the design derived from circuit simulations are 93.36 dB small-signal gain, 14.4 PV2/Hz input referred noise power, 26.5 kHz unity gain frequency, 20 V/ms slew rate. The proposed structure draws 260 nW power from 0.5 V power supply and is loaded with a 15 pF loading capacitor. The input common mode range of structure is from 0 to 0.5 V.

LOW VOLTAGE, LOW POWER CHEBYSHEV FILTER IN 0.18 μm CMOS TECHNOLOGY

2013 ◽  
Vol 22 (07) ◽  
pp. 1350053 ◽  
Author(s):  
S. REKHA ◽  
T. LAXMINIDHI
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Transconductance Amplifier ◽  
Low Pass ◽  
Unity Gain ◽  
Design Centering ◽  
Low Supply Voltage

This paper presents an active-RC continuous time filter in 0.18 μm standard CMOS technology intended to operate on a very low supply voltage of 0.5 V. The filter designed, has a 5th order Chebyshev low pass response with a bandwidth of 477 kHz and 1-dB passband ripple. A low-power operational transconductance amplifier (OTA) is designed which makes the filter realizable. The OTA uses bulk-driven input transistors and feed-forward compensation in order to increase the Dynamic Range and Unity Gain Bandwidth, respectively. The paper also presents an equivalent circuit of the OTA and explains how the filter can be modeled using descriptor state-space equations which will be used for design centering the filter in the presence of parasitics. The designed filter offers a dynamic range of 51.3 dB while consuming a power of 237 μW.

scholarly journals Low-power ASIC suitable for miniaturized wireless EMG systems

2019 ◽  
Vol 70 (5) ◽  
pp. 393-399 ◽  
Author(s):  
Vilem Kledrowetz ◽  
Roman Prokop ◽  
Lukas Fujcik ◽  
Michal Pavlik ◽  
Jiří Háze
Keyword(s):  
Low Power ◽  
Integrated Circuit ◽  
High Performance ◽  
Low Voltage ◽  
Cmos Technology ◽  
Instrumentation Amplifier ◽  
Pass Filter ◽  
Delta Sigma ◽  
Pulse Density ◽  
Wide Range

Abstract Nowadays, the technology advancements of signal processing, low-voltage low-power circuits and miniaturized circuits have enabled the design of compact, battery-powered, high performance solutions for a wide range of, particularly, biomedical applications. Novel sensors for human biomedical signals are creating new opportunities for low weight wearable devices which allow continuous monitoring together with freedom of movement of the users. This paper presents the design and implementation of a novel miniaturized low-power sensor in integrated circuit (IC) form suitable for wireless electromyogram (EMG) systems. Signal inputs (electrodes) are connected to this application-specific integrated circuit (ASIC). The ASIC consists of several consecutive parts. Signals from electrodes are fed to an instrumentation amplifier (INA) with fixed gain of 50 and filtered by two filters (a low-pass and high-pass filter), which remove useless signals and noise with frequencies below 20 Hz and above 500 Hz. Then signal is amplified by a variable gain amplifier. The INA together with the reconfigurable amplifier provide overall gain of 50, 200, 500 or 1250. The amplified signal is then converted to pulse density modulated (PDM) signal using a 12-bit delta-sigma modulator. The ASIC is fabricated in TSMC0.18 mixed-signal CMOS technology.

scholarly journals Design of Voltage Mode Electronically Tunable First Order All Pass Filter in ±0.7 V 16 nm CNFET Technology

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 95 ◽  
Author(s):  
Muhammad Masud ◽  
Abu A’ain ◽  
Iqbal Khan ◽  
Nasir Husin
Keyword(s):  
Low Voltage ◽  
Wide Frequency Range ◽  
Passive Components ◽  
Pass Filter ◽  
First Order ◽  
Voltage Mode ◽  
Tunable Range ◽  
Low Voltage Operation ◽  
Unity Gain ◽  
Electronically Tunable

A novel voltage mode first order active only tuneable all pass filter (AOTAPF) circuit configuration is presented. The AOTAPF has been designed using ±0.7 V, 16 nm carbon nanotube field effect transistor (CNFET) Technology. The circuit uses CNFET based varactor and unity gain inverting amplifier (UGIA). The presented AOTAPF is realized with three N-type CNFETs and without any external passive components. It is to be noted that the realized circuit uses only two CNFETs between its supply-rails and thus, suitable for low-voltage operation. The electronic tunability is achieved by varying the voltage controlled capacitance of the employed CNFET varactor. By altering the varactor tuning voltage, a wide tunable range of pole frequency between 34.2 GHz to 56.9 GHz is achieved. The proposed circuit does not need any matching constraint and is suitable for multi-GHz frequency applications. The presented AOTAPF performance is substantiated with HSPICE simulation program for 16 nm technology-node, using the well-known Stanford CNFET model. AOTAPF simulation results verify the theory for a wide frequency-range.

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