Synchrotron X-ray micro-analysis of epitaxial film grown on buffer layer boundary

2010 ◽  
Author(s):  
Chang-Yong Kim
Keyword(s):  
Buffer Layer ◽  
Epitaxial Film ◽  
Layer Boundary ◽  
X Ray ◽  
Micro Analysis

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Magnetic Anisotropy in Electrodeposited CO Films and spin-valves on Gaas Substrates

1999 ◽  
Vol 562 ◽  
Author(s):  
K. Attenborough ◽  
M. Cerisier ◽  
H. Boeve ◽  
J. De Boeck ◽  
G. Borghs ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Easy Axis ◽  
Spin Valve ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
Gaas Substrates ◽  
Unique Spin

ABSTRACTWe have studied the magnetic and structural properties of thin electrodeposited Co and Cu layers grown directly onto (100) n-GaAs and have investigated the influence of a buffer layer. A dominant fourfold anisotropy with a uniaxial contribution is observed in 10 nm Co electrodeposited films on GaAs. An easy axis is observed in the [001] GaAs direction with two hard axes of differing coercivities parallel to the [011] and [011] directions. For thicker films the easy axes in the [001] direction becomes less pronounced and the fourfold anisotropy becomes less dominant. Co films of similar thicknesses deposited onto an electrodeposited Cu buffer layer were nearly isotropic. From X-ray diffraction 21 nm Co layers on GaAs were found to be hcp with the c-axis tending to be in the plane of the film. The anisotropy is ascribed to the Co/GaAs interface and is held responsible for the unique spin-valve properties seen recently in electrodeposited Co/Cu films.

X-ray micro-analysis of cultured respiratory epithelial cells from patients with cystic fibrosis

1992 ◽  
Vol 146 (2) ◽  
pp. 213-220 ◽  
Author(s):  
S. SAGSTRÖM ◽  
G. M. ROOMANS ◽  
R. WROBLEWSKI ◽  
J. L. M. KEULEMANS ◽  
A. T. HOOGEVEEN ◽  
...  
Keyword(s):  
Cystic Fibrosis ◽  
Epithelial Cells ◽  
Respiratory Epithelial Cells ◽  
X Ray ◽  
Respiratory Epithelial ◽  
Micro Analysis

Effect of a MoO3 buffer layer between C8-BTBT and Co(100) single-crystal film

RSC Advances ◽  
2016 ◽  
Vol 6 (113) ◽  
pp. 112403-112408 ◽  
Author(s):  
Menglong Zhu ◽  
Lu Lyu ◽  
Dongmei Niu ◽  
Hong Zhang ◽  
Shitan Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Buffer Layer ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Single Crystal Film ◽  
Crystal Film ◽  
Ultraviolet Photoemission Spectroscopy

The effect of a MoO3 buffer layer inserted between 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) and Co single-crystal film has been investigated using X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS).

Preparation of InN by Means of AP-HCVD Using In Buffer Layers

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroaki Yokoo ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Electrical Property ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Indium Nitride ◽  
Buffer Layers ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quality Surface

AbstractWe have grown indium nitride (InN) films using In buffer layer on an a-plane sapphire substrate under atmospheric pressure by halide CVD (AP-HCVD). Growth was carried out by two steps: deposition In buffer layer at 900 °C and subsequent growth of InN layer at 650 °C. In order to compare, we also grown InN films on an a-plane sapphire. The InN films are investigated on crystal quality, surface morphology and electrical property using high-resolution X-ray diffraction (HR-XRD), X-ray pole figure, scanning electron microscope (SEM), Hall measurement. The results show that the crystal quality, surface morphology and electrical property of InN films are improved by using In buffer layer.

Intracellular Elemental Concentrations in Resting and Secreting Rat Parotid Glands

1987 ◽  
Vol 66 (2) ◽  
pp. 537-540 ◽  
Author(s):  
K.T. Izutsu ◽  
D.E. Johnson ◽  
M. Goddard
Keyword(s):  
Secretory Granules ◽  
Dry Weight ◽  
Parotid Glands ◽  
X Ray ◽  
Elemental Concentrations ◽  
Saliva Secretion ◽  
Concentration Changes ◽  
Rat Parotid ◽  
Micro Analysis

Electron probe x-ray micro-analysis was used to study the elemental concentration changes that occur during pilocarpine-stimulated saliva secretion. Quantitative x-ray micro-analysis of elemental concentrations in intracellular compartments of rat parotid glands stimulated in vivo with pilocarpine showed that Na concentration was significantly increased, while K concentration was significantly reduced. The magnitude of these changes was consistent with values obtained in other tissues with the x-ray micro-analysis method, and in the same tissue with other experimental methods. Comparisons with results from studies utilizing dispersed acini suggest that acinar dispersion procedures may affect intracellular elemental concentrations. Total electrolyte concentrations in cytoplasm and secretory granules were estimated to increase on a dry-weight basis following pilocarpine stimulation. The former change is consistent with the notion of a trans-cellular route of salivary fluid flow, while the latter change may be important in the exocytosis of secretory granules.

Hydrothermal Synthesis of Lead Titanate Epitaxial Film for Non-Volatile Memory Device Application

2013 ◽  
Vol 652-654 ◽  
pp. 1846-1850
Author(s):  
Thin Thin Thwe ◽  
Than Than Win ◽  
Yin Maung Maung ◽  
Ko Ko Kyaw Soe
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Lead Titanate ◽  
Conduction Mechanism ◽  
Epitaxial Film ◽  
Memory Device ◽  
X Ray Diffraction ◽  
X Ray ◽  
Non Volatile Memory ◽  
Scanning Electron

Hydrothermal synthesized lead titanate (PbTiO3¬) powder was prepared in a Teflon-lined stainless steel bomb at different bath temperatures. X-ray diffraction was performed to examine the phase assignment and crystallographic properties of hydrothermal synthesized lead titanate powder. Silicon dioxide (SiO2) was thermally deposited and adapted as intermediate layer on p-Si (100) substrates for MFIS (Metal/Ferroelectric/ Insulator/Semi-conductor) design. The microstructures of PbTiO3 film for both MFS and MFIS designs were observed by scanning electron microscopy (SEM). Charge conduction mechanism was also interpreted by C-2-V relationship. Polarization and electric field characteristics were measured by Sawyer-Tower circuit and good hysteresis nature was formed for both structures of the films. The loop of MFIS was wider than that of MFS cell. Also, the higher value of polarization (Ps=3.21E-03µC/cm2) for MFIS could be explained on the basis of higher dipole moment in this SiO2 buffer layer.

Sign in / Sign up

Export Citation Format

Share Document