Impact of Phosphorus Ion Implantation Dose on the Performance of PERC Solar Cell

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

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Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Journal of Micromanufacturing ◽

10.1177/2516598418785507 ◽

2018 ◽

Vol 1 (2) ◽

pp. 115-123 ◽

Cited By ~ 1

Author(s):

Zhongdu He ◽

Zongwei Xu ◽

Mathias Rommel ◽

Boteng Yao ◽

Tao Liu ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Focused Ion Beam ◽

Electron Backscatter Diffraction ◽

Ion Beam ◽

Implantation Dose ◽

Formation Mechanisms ◽

Schematic Model ◽

Dose Threshold ◽

Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

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A Simplified Ion Implantation System for Solar Cell Production

Photovoltaic Solar Energy Conference ◽

10.1007/978-94-009-8423-3_109 ◽

1981 ◽

pp. 698-702 ◽

Cited By ~ 1

Author(s):

L. D. Nielsen ◽

P. Balslev

Keyword(s):

Solar Cell ◽

Ion Implantation ◽

Cell Production

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Effect of argon ion implantation dose on silicon Schottky barrier characteristics

Applied Physics Letters ◽

10.1063/1.95247 ◽

1984 ◽

Vol 45 (4) ◽

pp. 431-433 ◽

Cited By ~ 38

Author(s):

S. Ashok ◽

H. Kräutle ◽

H. Beneking

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Implantation Dose ◽

Argon Ion

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Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

AIP Advances ◽

10.1063/1.5132881 ◽

2020 ◽

Vol 10 (1) ◽

pp. 015045

Author(s):

C.-M. Lim ◽

Z. Zhao ◽

K. Sumita ◽

K. Toprasertpong ◽

M. Takenaka ◽

...

Keyword(s):

Electrical Properties ◽

Ion Implantation ◽

Implantation Dose ◽

Hydrogen Ion ◽

Insulator Layers ◽

Hydrogen Ion Implantation

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High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.851 ◽

2006 ◽

Vol 527-529 ◽

pp. 851-854 ◽

Cited By ~ 1

Author(s):

Thomas Kups ◽

Petia Weih ◽

M. Voelskow ◽

Wolfgang Skorupa ◽

Jörg Pezoldt

Keyword(s):

High Temperature ◽

Ion Implantation ◽

Lattice Site ◽

Lattice Distortion ◽

Stacking Faults ◽

Implantation Dose ◽

Location Analysis ◽

High Dose ◽

Site Location ◽

Different Types

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

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Ion Implantation Monitoring of GaAs Using Thermal Waves

MRS Proceedings ◽

10.1557/proc-316-673 ◽

1993 ◽

Vol 316 ◽

Author(s):

R. Garcia ◽

E. J. Jaquez ◽

R.J. Culbertson ◽

C. D'Acosta ◽

C. Jasper

Keyword(s):

Activation Energy ◽

Thermal Properties ◽

Ion Implantation ◽

Diffusion Process ◽

Thermal Wave ◽

Room Temperature ◽

Implantation Dose ◽

Thermal Waves ◽

Crystal Imperfections ◽

Logarithmic Decay

ABSTRACTLaser modulated thermoreflectivity, also called thermal wave technology, has been used in recent years to monitor ion implantation dose by monitoring the damage due to implantation. The thermal properties which are affected by lattice perturbations and other crystal imperfections are tracked by this technique. A gauge capability study was performed on the Thermawave TP300 for monitoring ion implantation of GaAs wafers. The results are presented. In order to determine the sensitivity of the technique to changes in dose, a matrix of GaAs and Si wafers was measured. During this study a downward trend was observed in the repeatability of our results. It is shown that damage to a sample during implantation will relax to a certain degree at room temperature. This damage relaxation can take up to 80 hours at room temperature and can be observed using thermal waves. It is shown that “hot wafer decay” follows a logarithmic decay which is indicative of a diffusion process. At 180°C the decay lasts less than 1 minute which indicates that the defects causing this phenomenon have a low activation energy.

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Growth of Silica Nanowires Catalysed by Pd Ion Implantation into Si(100)

MRS Proceedings ◽

10.1557/proc-0900-o03-14 ◽

2005 ◽

Vol 900 ◽

Author(s):

Parveen Kumar Sekhar ◽

Dinesh Kumar Sood ◽

Shekhar Bhansali

Keyword(s):

Ion Implantation ◽

Rutherford Backscattering Spectrometry ◽

Heating Temperature ◽

Near Field ◽

Implantation Dose ◽

Growth Time ◽

Selective Synthesis ◽

Silica Nanowires ◽

Low Dimensional ◽

Future Technologies

ABSTRACTSelective synthesis of silica nanowires on silicon wafers catalyzed by Pd ion implantation is reported.Nanoclusters of palladium silicide acts as seeds for nucleation of wires following a Vapor-Liquid-Solid (VLS) growth model. The consumption of silicide towards nanowire growth is confirmed through Rutherford Backscattering Spectrometry (RBS).The influence of growth time, implantation dose and heating temperature on the structure and morphology of the wires is investigated. Optimization of the these tunable parameters would be needed to facilitate controlled and directed bottom-up growth of silica nanowires.Such selective synthesis may enable a large number of applications in wide areas of future technologies such as localization of light, low dimensional waveguides for functional microphotonics, scanning near field optical microscopy (SNOM), optical interconnects, sacrificial templates, optical transmission antennae and biosensors.

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