In the digital world, Static Random Access Memory (SRAM) is one of the efficient core component for electronics design, it consumes huge amount of power and die area. In this research, the SRAM design analysis in terms of read margin, write margin and Static Noise Margin (SNM) for low power application is considered. In SRAM memory, both read and write operation affect by noise margin. So, read and write noise margins are considered as the significant challenges in designing SRAM cell. In this research, robust 6T-SRAM cell is designed to decrease the power utilization. The Auto Awake Mode is developed to control the entire 6T-SRAM cell design. The proposed 6T-SRAM- Auto Awake Mode (6T-SRAM-AAM) was implemented to reduce power utilization of understand and write down operation inside the 20 nm FinFET library. The experimental results showed the proposed 6T-SRAM-AAM design reduced power consumption of read & write operation up to 25% to 33.33% compared to existing Static RAM cells design
A Low Power 6T-Auto Awake Mode-SRAM Design for high speed storage application
