Loss and recovery of hydrophobicity, surface energies, diffusion coefficients and activation energy of nylon

1999 ◽  
Vol 6 (5) ◽  
pp. 754-762
Author(s):  
T. Tokoro ◽  
R. Hackam
2012 ◽  
Vol 727-728 ◽  
pp. 163-168 ◽  
Author(s):  
Marcos Flavio de Campos

In the case of the modeling of sintering and heat treatments, the diffusion coefficients are an essential input. However, experimental data in the literature about diffusion coefficients for rare-earth transition metal intermetallics is scarce. In this study, the available data concerning diffusion coefficients relevant for rare-earth transition metal magnets are reviewed and commented. Some empirical rules are discussed, for example the activation energy is affected by the size of the diffusing impurity atom. Diffusion coefficients for Dy, Nd and Fe into Nd2Fe14B are given according an Arrhenius equation D=D0exp (-Q/RT). For Dy diffusion into Nd2Fe14B, Q 315 kJ/mol and D08 . 10-4m2/s.


Author(s):  
Maria F. de Morais ◽  
José R. O. dos Santos ◽  
Marisângela P. dos Santos ◽  
Dyego da C. Santos ◽  
Tiago N. da Costa ◽  
...  

ABSTRACT This study aimed to dry ‘bacaba’ (Oenocarpus bacaba Mart.) pulp under different thermal conditions, fit different mathematical models to the dehydration curves, and calculate the diffusion coefficients, activation energy and thermodynamic properties of the process. ‘Bacaba’ fruits were meshed to obtain the pulp, which was dried at temperatures of 40, 50 and 60 °C and with thickness of 1.0 cm. Increase in drying temperature reduced the dehydration times, as well as the equilibrium moisture contents, and drying rates of 0.65, 1.04 and 1.25 kg kg min-1 were recorded at the beginning of the process for temperatures of 40, 50 and 60 °C, respectively. The Midilli’s equation was selected as the most appropriate to predict the drying phenomenon, showing the highest R2, lowest values of mean square deviation (MSD) and χ2 under most thermal conditions, and random distribution of residuals under all experimental conditions. The effective diffusion coefficients increased with increasing temperature, with magnitudes of the order of 10-9 m2 s-1, being satisfactorily described by the Arrhenius equation, which showed activation energy (Ea) of 37.01 kJ mol-1. The drying process was characterized as endergonic, in which enthalpy (ΔH) and entropy (ΔS) reduced with the increment of temperature, while Gibbs free energy (ΔG) was increased.


2019 ◽  
Vol 2019 ◽  
pp. 1-9
Author(s):  
Johann Ewender ◽  
Frank Welle

Polyethylene naphthalate (PEN) is a polyester polymer with well-known good barrier properties. PEN had been used in the food packaging area till 2012 especially as refillable bottles for soft drinks, juices, and beer. Now, PEN is mainly used in technical applications, e.g., for data storage tapes and organic light-emitting diode (OLED) applications. The aim of the study was the determination of the diffusion coefficients of organic molecules (n-alkanes, 1-alcohols) in PEN. Diffusion and partition coefficients were determined from the lag times of the permeation process of the permeants through a commercial 12 μm biaxial-oriented PEN film. In addition, activation energies of diffusion EA were calculated according to the Arrhenius approach. The activation energy of diffusion EA follows a correlation with the molecular volume V of the investigated permeants. In addition, the preexponential factor D0 follows a correlation with the activation energy of diffusion EA. The results of this study for PEN (e.g., EA, DP) were compared to literature data on PET.


2019 ◽  
Vol 21 (8) ◽  
pp. 4268-4275 ◽  
Author(s):  
Alexandra von der Heiden ◽  
Manuel Bornhöfft ◽  
Joachim Mayer ◽  
Manfred Martin

We established a TTT diagram of crystallisation of gallium oxide. Determination of oxygen tracer diffusion coefficients by IEDP/ToF-SIMS allowed us to access the activation energy for amorphous GaO1.5 at low temperatures.


2001 ◽  
Vol 669 ◽  
Author(s):  
J. S. Christensen ◽  
A. Yu. Kuznetsov ◽  
H. H. Radamson ◽  
B. G. Svensson

ABSTRACTPhosphorus diffusion has been studied in both pure epitaxially grown silicon and Cz silicon, with a substantial amount of impurities like oxygen and carbon. Anneals have been performed in different atmospheres, N2 and dry O2, as well as in vacuum, at temperatures between 810 – 1100°C. Diffusion coefficients extracted from these anneals show no difference for the P diffusion in the epitaxially grown or the Cz silicon. The diffusion coefficients follow an Arrhenius dependence with the activation energy Ea=2.74±0.07 eV and a prefactor D0 = (8±5)×10−4 cm2/s. These parameters differ considerably from the previously reported and widely accepted values (3.66 eV and 3.84 cm2/s, respectively). However, vacuum anneals of the same samplesresult in values close to this 3.6 eV diffusion mode. Furthermore, control anneals of boron doped samples, with similar design as the phosphorus samples, suggest the same trend for boron diffusion in silicon – lower versus higher values of activation energies for nitrogen and vacuum anneals, respectively. These results are discussed in terms of the concentration of Si self-interstitials mediating the diffusion of phosphorus and boron.


2004 ◽  
Vol 809 ◽  
Author(s):  
Suresh Uppal ◽  
A. F. W. Willoughby ◽  
J. M. Bonar ◽  
N. E. B. cowern ◽  
R. J. H. Morris ◽  
...  

ABSTRACTThe diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800–900 °C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diRusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(±0.3) eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750–875 °C are in agreement with previous work. The activation energy of 3.2(±0.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion.


2017 ◽  
Vol 375 ◽  
pp. 84-90 ◽  
Author(s):  
Masashi Watanabe ◽  
Takeo Sunaoshi ◽  
Masato Kato

The oxygen chemical diffusion coefficient in (U, Pu)O2-x was determined by thermo-gravimetry as functions of the Pu content, oxygen-to-metal ratio and temperature. The surface reaction was considered in the diffusion coefficient determination. The activation energy for the chemical diffusion coefficient was 60 kJ/mol and 65 kJ/mol, respectively, in (U0.8Pu0.2)O2-x and (U0.7Pu0.3)O2-x.


Although the existence as well as some of the properties of adsorbed films of alkali and alkali earth metals on metals of higher work function have long been known, it is only recently that these films have been shown to be capable of migrating over the surface of the adsorbent, and that attempts have been made to measure diffusion coefficients and the activation energy associated with the diffusion. Langmuir and Taylor, investigating the properties of cæsium films, found it necessary to postulate that the cæsium was mobile in order to account for the high value (α ≅ 1.0) for the condensation coefficient on quite concentrated films. Later they were able to make a direct measurement of the diffusion coefficient. They obtained a value of D at 812° K of 3.4 x 10 -5 cm 2 secs -1 , and an activation energy of 0.61 volt. Langmuir has also shown that cæsium films exist in two phases and has measured the diffusion coefficient by following the movement of the boundary between these two phases.


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