Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation

AbstractTwo different Si(100) substrates, the 4°off-axis and the on-axis Si(100), were prepared. Ti thin films were deposited in an e-beam evaporation system and the amorphous layers of Ti-silicide were formed at different annealing temperatures. The Si(100) substrates before Ti film deposition were examined with AFM to verify the atomic scale roughness of the initial Si substrates. The amorphous layer was observed by HRTEM and TEM. And the chemical analysis and phase identification were examined by AES and XRD. The Si(100) substrate after HF clean shows the atomic scale microroughness such as atomic steps and pits on the Si surface. The on-axis Si(100) substrate exhibits much rougher surface morphologies than those of the off-axis Si(100). These differences of atomic scale roughnesses of Si substrates result in the difference of the thicknesses of amorphous Ti-silicide layers. The amorphous layer thicknesses on the on-axis exhibit thicker than those of the off-axis Si(100) and these differences inamorphous layer thicknesses became decreased as annealing temperatures increased. These indicate that the role of the atomic scale roughness on the amorphous layer thickness is much significant at low temperatures. In this study, the correlation between the atomic scale roughness and the amorphous layer thickness is discussed in terms of the atomic steps and pits based on the observation with using analysis tools such as AFM, TEM and HRTEM.

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Al composition and AlxInyGazN layer thickness dependent new analytical model for I-V characteristics of AlxInyGazN/GaN HEMTs

Materials Today Proceedings ◽

10.1016/j.matpr.2019.06.700 ◽

2019 ◽

Vol 19 ◽

pp. 205-208

Author(s):

Kavita Thorat Upadhyay ◽

Manju K. Chattopadhyay

Keyword(s):

Layer Thickness ◽

Analytical Model ◽

Gan Hemts

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Transmission Electron Microscopy and Spectroscopic Ellipsometry Studies of Damage Layer Induced by Large Tilt Angle Ion Implantation

Journal of The Electrochemical Society ◽

10.1149/1.1837061 ◽

1996 ◽

Vol 143 (8) ◽

pp. 2636-2640

Author(s):

Zhiping He ◽

Filadelfo Cristiano ◽

Zuyao Zhou ◽

Youhua Qian ◽

Liangyao Chen ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Implantation ◽

Spectroscopic Ellipsometry ◽

Tilt Angle ◽

Damage Layer ◽

Transmission Electron

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A Modified Analytical Heat Source Model for Numerical Simulation of Temperature Field in Friction Stir Welding

Advances in Materials Science and Engineering ◽

10.1155/2020/4639382 ◽

2020 ◽

Vol 2020 ◽

pp. 1-16

Author(s):

Xiangqian Liu ◽

Yan Yu ◽

Shengli Yang ◽

Huijie Liu

Keyword(s):

Heat Flux ◽

Friction Stir Welding ◽

Analytical Model ◽

Heat Generation ◽

Tilt Angle ◽

Temperature Fields ◽

Analytical Models ◽

Maximum Temperature ◽

Thermal Cycles ◽

Friction Stir

In the conventional analytical model used for heat generation in friction stir welding (FSW), the heat generated at the pin/workpiece interface is assumed to distribute uniformly in the pin volume, and the heat flux is applied as volume heat. Besides, the tilt angle of the tool is assumed to be zero for simplicity. These assumptions bring about simulating deviation to some extent. To better understand the physical nature of heat generation, a modified analytical model, in which the nonuniform volumetric heat flux and the tilt angle of the tool were considered, was developed. Two analytical models are then implemented in the FEM software to analyze the temperature fields in the plunge and traverse stage during FSW of AA6005A-T6 aluminum hollow extrusions. The temperature distributions including the maximum temperature and heating rate between the two models are different. The thermal cycles in different zones further revealed that the peak temperature and temperature gradient are very different in the high-temperature region. Comparison shows that the modified analytical model is accurate enough for predicting the thermal cycles and peak temperatures, and the corresponding simulating precision is higher than that of the conventional analytical model.

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TEM Characterization of Arsenic and Phosphorus Implanted Silicon Devices

Microscopy and Microanalysis ◽

10.1017/s1431927600009223 ◽

1997 ◽

Vol 3 (S2) ◽

pp. 467-468

Author(s):

Lancy Tsung ◽

Hun-Lian Tsai ◽

Alwin Tsao ◽

Makoto Takemura

Keyword(s):

Ion Implantation ◽

Crystalline Silicon ◽

Source Region ◽

Amorphous Layer ◽

Common Source ◽

Silicon Devices ◽

Similar Region ◽

Before And After ◽

P Type ◽

Silicon Device

Ion implantation of arsenic and phosphorus is a common practice in silicon devices for the formation of transistor source/drain regions. We used a TEM equipped with EDX capabilities to investigate effects of ion implantation in actual devices before and after annealing. A 200 kev field emission gun TEM was used in this study. Two implant cases were studied here. Both samples are p-type, (100) Si wafers.Figure 1 shows the microstructure in a common source region of a silicon device after being implanted by phosphorus (4x1014 cm−2 at 30 kv, 0°), while Figure 2 shows a similar region for arsenic implantation (5x1015 cm−2 at 45 kv, 0°). No screen layer was used during implantation. The phosphorus implant results in a ˜0.05 μm amorphous layer sandwiched between heavily damaged crystalline silicon. High resolution images reveal a rough amorphous/damaged crystalline boundary and high density defects due to silicon lattice displacements.

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A Study of the Corrosion Resistance of M50NiL Bearing Steel by Ion Implantation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.936.1132 ◽

2014 ◽

Vol 936 ◽

pp. 1132-1137

Author(s):

J. Jin ◽

Y.B. Chen ◽

K.W. Gao ◽

X.l. Huang

Keyword(s):

Corrosion Resistance ◽

Ion Implantation ◽

Grain Boundaries ◽

Potentiodynamic Polarization ◽

Corrosion Potential ◽

Amorphous Layer ◽

Bearing Steel ◽

Detection Methods ◽

Corrosion Reaction ◽

Strengthening Phases

The corrosion resistance of metal-N double-element alternate implanted M50NiL bearing steel was investigated by potentiodynamic polarization and detection methods of SEM, XPS, AES and TEM. The results showed that ion implanted M50NiL can increase the corrosion potential of substrate, reduce the corrosion active points and inhibit the corrosion reaction induced at the grain boundaries. The formed amorphous layer and strengthening phases take main roles in improving the corrosion resistance of M50NiL bearing steel.

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Crystallization, Diffusion and Phase Separation in Sapphire Amorphised by Indium Ion Implantation

MRS Proceedings ◽

10.1557/proc-100-113 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 2

Author(s):

D. X. Cao ◽

D. K. Sood ◽

A. P. Pogany

Keyword(s):

Phase Separation ◽

Ion Implantation ◽

Isothermal Annealing ◽

Amorphous Layer ◽

Dose Dependence ◽

Rapid Diffusion ◽

Amorphous Surface ◽

Indium Ion

ABSTRACTIndium implantation into a-axis sapphire to peak concentrations of 8–45 mol % In produces amorphous surface layers.Migration of In during isothermal annealing at 600°C shows a strong ion dose dependence. For a dose of 6×1016In/cm2, two distinct types of In migration are seen - a) rapid diffusion of In within amorphous Al2O3 and b) diffusion of In into crystalline Al2O3 underlying the amorphous layer. For doses lower than 3×1016In/cm2 , no such migration of In is seen under identical anneal conditions. However, In undergoes phase separation into crystalline In2O3 particles embedded in amorphous Al2O3 at all doses.

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