An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer

2014 ◽  
Vol 61 (8) ◽  
pp. 2662-2667 ◽  
Author(s):  
Chung-Hao Fu ◽  
Kuei-Shu Chang-Liao ◽  
Li-Jung Liu ◽  
Chen-Chien Li ◽  
Ting-Ching Chen ◽  
...  
2020 ◽  
Vol 223 ◽  
pp. 111219 ◽  
Author(s):  
S. Siddiqui ◽  
R. Galatage ◽  
W. Zhao ◽  
G. Raja Muthinti ◽  
J. Fronheiser ◽  
...  

Vacuum ◽  
2020 ◽  
Vol 179 ◽  
pp. 109479
Author(s):  
Dun-Bao Ruan ◽  
Kuei-Shu Chang-Liao ◽  
Wen-Yen Hsu ◽  
Shih-Han Yi ◽  
Yao-Jen Lee

2003 ◽  
Vol 77 (5) ◽  
pp. 721-724 ◽  
Author(s):  
L. Yan ◽  
H.B. Lu ◽  
G.T. Tan ◽  
F. Chen ◽  
Y.L. Zhou ◽  
...  

2006 ◽  
Vol 153 (7) ◽  
pp. G636 ◽  
Author(s):  
Hirotaka Hamamura ◽  
Mieko Matsumura ◽  
Toshiyuki Mine ◽  
Kazuyoshi Torii

2006 ◽  
Vol 966 ◽  
Author(s):  
C.Y. Liu ◽  
Tseung-Yuen Tseng

ABSTRACTAmong various possible candidates of high-k gate dielectrics, SrTiO3 plays an important role because it has high dielectric constant and it can be epitaxially grown on silicon substrate. The fabrication process and properties of SrTiO3 gate dielectrics are reported. The effect of the addition of SiO2 on the microstructure and electrical properties of SrTiO3 gate dielectric is also presented. The minimization of the effect of interfacial layer between SrTiO3 and Si is the most important issue for obtaining high quality high-k gate dielectrics. The possible methods to improve the interfacial properties and the measurement techniques to characterize the interfacial layer are discussed.


1996 ◽  
Vol 10 (12) ◽  
pp. 567-571 ◽  
Author(s):  
YAN CHEN ◽  
E.G. WANG ◽  
FENG CHEN ◽  
LIPING GUO

High quality crystalline C–N films have been synthesized via hot filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy images show that a high density of crystalline clusters has been achieved. The clusters are composed of small columnar crystals (20–200 nm across) with hexagonal facets. Energy dispersive X ray analysis indicates a relative nitrogen:carbon composition of 1.30–2.5. X ray diffraction results indicate the films composed of β- and α- C 3 N 4 phases. Together with transmission electron microscopy analyses, we suggest that an interfacial layer C 3−x Si x N 4 is formed between the silicon substrate and the crystalline carbonnitride films.


2004 ◽  
Vol 25 (2) ◽  
pp. 70-72 ◽  
Author(s):  
H.Y. Yu ◽  
J.F. Kang ◽  
C. Ren ◽  
J.D. Chen ◽  
Y.T. Hou ◽  
...  

1966 ◽  
Vol 24 ◽  
pp. 51-52
Author(s):  
E. K. Kharadze ◽  
R. A. Bartaya

The unique 70-cm meniscus-type telescope of the Abastumani Astrophysical Observatory supplied with two objective prisms and the seeing conditions characteristic at Mount Kanobili (Abastumani) permit us to obtain stellar spectra of a high quality. No additional design to improve the “climate” immediately around the telescope itself is being applied. The dispersions and photographic magnitude limits are 160 and 660Å/mm, and 12–13, respectively. The short-wave end of spectra reaches 3500–3400Å.


Author(s):  
R. L. Lyles ◽  
S. J. Rothman ◽  
W. Jäger

Standard techniques of electropolishing silver and silver alloys for electron microscopy in most instances have relied on various CN recipes. These methods have been characteristically unsatisfactory due to difficulties in obtaining large electron transparent areas, reproducible results, adequate solution lifetimes, and contamination free sample surfaces. In addition, there are the inherent health hazards associated with the use of CN solutions. Various attempts to develop noncyanic methods of electropolishing specimens for electron microscopy have not been successful in that the specimen quality problems encountered with the CN solutions have also existed in the previously proposed non-cyanic methods.The technique we describe allows us to jet polish high quality silver and silver alloy microscope specimens with consistant reproducibility and without the use of CN salts.The solution is similar to that suggested by Myschoyaev et al. It consists, in order of mixing, 115ml glacial actic acid (CH3CO2H, specific wt 1.04 g/ml), 43ml sulphuric acid (H2SO4, specific wt. g/ml), 350 ml anhydrous methyl alcohol, and 77 g thiourea (NH2CSNH2).


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