Characterization of a PiezoMUMPs Microsensor for Contactless Measurements of DC Electrical Current

2020 ◽  
Vol 69 (4) ◽  
pp. 1387-1396
Author(s):  
Carlo Trigona ◽  
Valentina Sinatra ◽  
Giuseppa Crea ◽  
Bruno Ando ◽  
Salvatore Baglio
Keyword(s):  
Electrical Current ◽  
Contactless Measurements

Improvement of RSM Prediction and Optimization by Using Box-Cox Transformation

2018 ◽  
pp. 156-191
Author(s):  
Mustafa Çırak
Keyword(s):  
Electrical Current ◽  
Physicochemical Process ◽  
Quadratic Model ◽  
Operational Parameters ◽  
New Model ◽  
Engineering Technique ◽  
Perfect Normality ◽  
Mineral Industries ◽  
Box Cox Transformation

Electrocoagulation can be effectively used in the elimination of the colloids from the tailings of the mineral industries. Owing to the numerous operational parameters of this physicochemical process, the best engineering technique for the characterization of the process is RSM. In this chapter, a non-transformed quadratic model is firstly formed considering the supernatant turbidity of the electrocoagulation experiments as a function of temperature, pH, and electrical current. Then, the non-normality and the heteroscedasticity of this initial model was indicated. These drawbacks were improved by using the Box-Cox transformation with λ of -0.32 and a new model with a perfect normality and homoscedasticity was obtained. The R2 value increased from 81.60% to 99.48% and adjusted R2 increased from 48.48% to 99.22% upon the transformation. According to the confirmed optimization results of the Box-Cox transformed model, the maximum desirability was obtained at pH of 5, temperature of 85°C, and electrical current of 0.25A, and the supernatant turbidity decreased down to 2.25 NTU.

Measurement and Characterization Techniques for Thermoelectric Materials

1997 ◽  
Vol 478 ◽  
Author(s):  
Terry M. Tritt
Keyword(s):  
Temperature Difference ◽  
Thermoelectric Materials ◽  
Electrical Current ◽  
Systematic Errors ◽  
Peltier Effect ◽  
Characterization Techniques

AbstractCharacterization of thermoelectric materials can pose many problems. A temperature difference can be established across these materials as an electrical current is passed due to the Peltier effect. The thermopower of these materials is quite large and thus large thermal voltages can contribute to many of the measurements necessary to investigate these materials. This paper will discuss the characterization techniques necessary to investigate these materials and provide an overview of some of the potential systematic errors which can arise. It will also discuss some of the corrections one needs to consider. This should provide an introduction to the characterization and measurement of thermoelectric materials and provide references for a more in depth discussion of the concepts. It should also serve as an indication of the care that must be taken while working with thermoelectric materials.

Interface Characterization of Al–Cu Microlaminates Fabricated By Electrically Assisted Roll Bonding

2017 ◽  
Vol 5 (3) ◽  
Author(s):  
Marzyeh Moradi ◽  
Man-Kwan Ng ◽  
Taekyung Lee ◽  
Jian Cao ◽  
Yoosuf N. Picard
Keyword(s):  
High Current Density ◽  
Strong Dependence ◽  
Electrical Current ◽  
Applied Current ◽  
Simultaneous Application ◽  
Roll Bonding ◽  
Electrically Assisted ◽  
Interface Characteristics ◽  
Peel Tests

Interface characteristics of Al/Cu microlaminates fabricated by an electrically assisted roll bonding (EARB) process were studied to understand the underlying physical/chemical phenomena that lead to bond strength enhancement when applying electrical current during deformation. Peel tests were conducted for the Al/Cu roll-bonded laminates produced under 0 A, 50 A, and 150 A applied current. After peel tests using a microtensile machine, the fractured surfaces of both the Al and Cu–sides were examined using scanning electron microscopy (SEM) for fractography and SEM-based energy dispersive (EDS) analysis. Results revealed the strong dependence of the fracture path and its morphology on the strength of the bond, which is influenced by various phenomena occurring at the interface during EARB, such as microextrusion through surface microcracks, possible formation of intermetallic components and thermal softening during simultaneous application of strain and high current density.

Electrochemical Characterization of Graphite-Zero-Valent Iron for 3-Monochloropropane-1,2-Diol (3-MCPD) Detection

2021 ◽  
Vol 1025 ◽  
pp. 20-25
Author(s):  
Farrah Aida Arris ◽  
Wan Nabilah Manan ◽  
Hatika Kaco ◽  
Ahmad Hakimi Shaffie ◽  
Mohd Shaiful Sajab
Keyword(s):  
Graphite Electrode ◽  
Electrical Current ◽  
Dip Coating ◽  
Zero Valent Iron ◽  
Ex Situ ◽  
Potential Range ◽  
Formation Method ◽  
The Impact

This study aims to investigate the feasibility of modifying graphite electrode with zero-valent iron (ZVI) to electrochemically detect the presence of 3-MCPD using two (2) deposition methods, namely dip coating and drop casting. Both methods were tested against in situ and ex situ ZVI formation method. Results showed that ex situ ZVI formation using drop casting method onto graphite electrode showed highest peak current when tested using cyclic voltammetry (CV). Results also showed that the 3-MCPD presence was detected at potential range of-25 mV to 45 mV due to the sudden spike in electrical current when tested using CV mode. The impact of this study is to provide a basis for further investigation of 3-MCPD detection in palm oil using electrochemical method due to its simplicity for the development of a portable, fast and reliable 3-MCPD sensor.

In-situ electrical characterization of Si during nanoindentation

2002 ◽  
Vol 750 ◽  
Author(s):  
J. E. Bradby ◽  
J. S. Williams ◽  
M. V. Swain
Keyword(s):  
Schottky Contact ◽  
Electrical Characterization ◽  
Electrical Current ◽  
Metallic Phase ◽  
High Resistivity ◽  
Previous Suggestion ◽  
Amorphous Si ◽  
Insight Into

ABSTRACTA novel in-situ electrical characterization technique is used to study the deformation behavior of silicon during nanoindentation. The method involved the formation of a Schottky contact on high resistivity epitaxial Si that is converted to an ohmic contact when Si transforms from the familiar semiconducting Si-I to a metallic Si-II phase. This behavior leads to substantial changes in the current measured across the sample. The Si conductivity used (epitaxial 5 Ωcm on 6 × 10-3 Ωcm) provides particular sensitivity to the onset of a phase transformation directly under the indenter. On unloading, a reverse transformation from ohmic to Schottky contact was observed. This configuration was used to correlate the observed changes in the electronic properties with features in nanoindentation load-unload curves. The onset of the transformation to the metallic phase was observed to occur during loading using both spherical and Berkovich indenters. Interestingly, the onset of the transformation was detected before the observed discontinuity on loading (the so-called ‘pop-in’ event). This observation is consistent with our previous suggestion that the pop-in event is a result of the onset of flow of the ductile metallic phase beyond the constraint of the indenter. These changes were consistently observed after repeated indentation on the same position in the sample, indicating that small volumes of Si-III and Si-XII crystalline phases as well as amorphous Si (a-Si), which form on unloading, can transform back to the metallic Si-II phase on reloading. A strong decrease in the measured electrical current across the sample occurred as soon as the unloading cycle commenced and prior to the observation of the pop-out event. Overall, these in-situ measurements have provided much insight into pressure-induced transformation in Si under nanoindentation.

Analysis of SiO2 Thin Film Deposited by Reactive Sputtering

2006 ◽  
Vol 518 ◽  
pp. 149-154
Author(s):  
I. Radović ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Olivier Jaoul ◽  
N.Ž Romčević ◽  
...  
Keyword(s):  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Electrical Current ◽  
Reactive Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Target ◽  
High Purity Silicon

SiO2 layers were deposited by reactive d.c ion sputtering (using 1keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7·10-9mbar, and the substrate temperature was held at 550 °C. The argon partial pressure during ion gun operation was 1·10-3mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2·10-4mbar and an electrical current on the target of 5.5mA.

scholarly journals I-V characteristic behavior of BSCCO-2223 superconductor under low intensity DC magnetic fields a Home-Made Experiment

2018 ◽  
Vol 1 (2) ◽  
Author(s):  
Guilherme Botega Torsoni ◽  
Gustavo Quereza Freitas ◽  
Claudio Luis Carvalho
Keyword(s):  
Magnetic Field ◽  
Electrical Resistance ◽  
Electrical Characterization ◽  
Electrical Current ◽  
Double Step ◽  
Dc Magnetic Field ◽  
Low Intensity ◽  
Current Voltage ◽  
Copper Coil

Electrical characterization of superconductor materials exposed to external magnetic field play a important role for many technological applications. In this paper, the electrical characterization of Bi-2223 pellet prepared by conventional route was performed. The electrical resistance temperaturedependence (RxT), showed a superconductor transition at around 105 K. The current-voltage (I-V) behavior under magnetic field and temperature has been investigated, the results point to a powerlaw dependence between the electrical current (I) and applied voltage (V), at different conditions, as described by the literature. The external DC magnetic field, was produced by a simple home-made apparatus, where a simple copper coil was used to produce an external DC magnetic field between 2,0 mT and 8,0 mT. Then, the dependence of the critical current (Ic) on magnetic field and temperature has been studied, revealing a double step behavior DOI:http://dx.doi.org/10.30609/JETI.2018-2.5682

Characterization of Al2O3 Thin Films Deposited by PLD

2014 ◽  
Vol 895 ◽  
pp. 25-28 ◽  
Author(s):  
Nurhanna Badar ◽  
Norlida Kamarulzaman
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Electrical Current ◽  
Grazing Incidence ◽  
Laser Deposition ◽  
High Quality ◽  
Grazing Incidence Diffraction ◽  
Current Voltage ◽  
Dense Films

Aluminium Oxide (Al2O3) thin films have been widely used in many kinds of applications due to their excellent properties such as good mechanical strength, high abrasive and insulating characteristics. In this work, Al2O3 thin films are deposited on silicon (100) substrates using pulsed laser deposition (PLD). The deposition is done using different chamber environments. The crystal structure of the thin films is investigated using Grazing Incidence Diffraction (GID). The surface morphology and thicknesses of the thin films are studied by Field Emission Scanning Electron Microscopy (FESEM). The electrical current-voltage (I-V) characteristics of the thin films are measured using Signaton H150 Probe Station with Keithly 302 source measurement. It was found that the different process parameters greatly influenced the characteristics of the thin films obtained. FESEM images show high quality, smooth and dense films obtained using the PLD method. Generally, all films show rectifying behaviour.

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