Microstructural Characterization of Structural Ceramics Using Image Processing and Analysis

1993 ◽  
Vol 76 (6) ◽  
pp. 1551-1557 ◽  
Author(s):  
Jesse Hefter ◽  
Arlene Hecker ◽  
F. Michael Mahoney ◽  
Jody E. Harris
Lab on a Chip ◽  
2017 ◽  
Vol 17 (2) ◽  
pp. 256-266 ◽  
Author(s):  
Sven Kochmann ◽  
Sergey N. Krylov

An image processing and analysis system facilitates quantitative characterization of performance of free-flow-electrophoresis chips.


Author(s):  
J. Hefter ◽  
J.L. Harris ◽  
B.M. Ditchek

Image processing and analysis provides a variety of powerful tools for characterizing morphological features of material microstructure including determination of object size and shape. Feature analysis of the rod structures present in Si-TaSi2 semiconductor-metal eutectic composites has been important since any non-circularity or nonhomogeneous distribution of these rods can affect leakage currents in devices. In addition, device yield and reproducibility can be affected by nonuniformities in rod size, shape, and spacing in a given wafer.Determination of rod density variations in Si-TaSi2 eutectic composites have been carried out using a scanning electron microscopy-image processing and analysis methodology. SEM data (Fig. 1) were collected using a JEOL 840 instrument (including computer-controlled x-y stage automation) coupled with a Tracor Northern 8502 high-performance image analyzer. Digital backscattered electron images were collected (512×512×8) since this imaging mode provided excellent contrast between the Ta-containing rods and the Si matrix. Gray-scale images were converted to binary images by suitable thresholding and then processed to determine the morphometries of interest. Programmed schedules allowed for computer acquisition of line profiles of data including control of specimen position. Typical line profiles across the widest portion of the wafer generally required 150-200 frames (at a magnification of 1000×) and occupied the instrument for ≈3 h.


Materials ◽  
2020 ◽  
Vol 13 (20) ◽  
pp. 4517
Author(s):  
John D. Yeager ◽  
Lindsey A. Kuettner ◽  
Amanda L. Duque ◽  
Larry G. Hill ◽  
Brian M. Patterson

Microstructural characterization of composite high explosives (HEs) has become increasingly important over the last several decades in association with the development of high fidelity mesoscale modeling and an improved understanding of ignition and detonation processes. HE microstructure influences not only typical material properties (e.g., thermal, mechanical) but also reactive behavior (e.g., shock sensitivity, detonation wave shape). A detailed nondestructive 3D examination of the microstructure has generally been limited to custom-engineered samples or surrogates due to poor contrast between the composite constituents. Highly loaded (>90 wt%) HE composites such as plastic-bonded explosives (PBX) are especially difficult. Here, we present efforts to improve measurement quality by using single and dual-energy microcomputed X-ray tomography and state-of-the-art image processing techniques to study a broad set of HE materials. Some materials, such as PBX 9502, exhibit suitable contrast and resolution for an automatic segmentation of the HE from the polymer binder and the voids. Other composite HEs had varying levels of success in segmentation. Post-processing techniques that used commercially available algorithms to improve the segmentation quality of PBX 9501 as well as zero-density defects such as cracks and voids could be easily segmented for all samples. Aspects of the materials that lend themselves well to this type of measurement are discussed.


2020 ◽  
Author(s):  
A. Yacout ◽  
A. Robinson ◽  
B. Ye ◽  
D. Keiser ◽  
G. Hofman ◽  
...  

Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.


Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.


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