Preferred‐oriented polycrystalline Y 3 Fe 5 O 12 films grown on quartz with low microwave loss

Author(s):  
Biswanath Bhoi ◽  
Mangesh S. Diware
Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 38
Author(s):  
Francisco Rey-García ◽  
Rafael Ibáñez ◽  
Luis Alberto Angurel ◽  
Florinda M. Costa ◽  
Germán F. de la Fuente

The Laser Floating Zone (LFZ) technique, also known as Laser-Heated Pedestal Growth (LHPG), has been developed throughout the last several decades as a simple, fast, and crucible-free method for growing high-crystalline-quality materials, particularly when compared to the more conventional Verneuil, Bridgman–Stockbarger, and Czochralski methods. Multiple worldwide efforts have, over the years, enabled the growth of highly oriented polycrystalline and single-crystal high-melting materials. This work attempted to critically review the most representative advancements in LFZ apparatus and experimental parameters that enable the growth of high-quality polycrystalline materials and single crystals, along with the most commonly produced materials and their relevant physical properties. Emphasis will be given to materials for photonics and optics, as well as for electrical applications, particularly superconducting and thermoelectric materials, and to the growth of metastable phases. Concomitantly, an analysis was carried out on how LFZ may contribute to further understanding equilibrium vs. non-equilibrium phase selectivity, as well as its potential to achieve or contribute to future developments in the growth of crystals for emerging applications.


IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Richard Gumbleton ◽  
Robert Batson ◽  
Kenneth Nai ◽  
Adrian Porch

Author(s):  
Alexander Konetschny ◽  
Marcel Weinhold ◽  
Christian Heiliger ◽  
Matthias Thomas Elm ◽  
Peter J. Klar

Square-shaped Ce0.8Gd0.2O2 (GDC) membranes are prepared by microstructuring techniques from (111)-oriented, polycrystalline GDC thin films. The strain state of the membranes is investigated by micro-Raman mapping using polarized excitation light....


1992 ◽  
Vol 276 ◽  
Author(s):  
D-G. Oei ◽  
S. L. McCarthy

ABSTRACTMeasurements of the residual stress in polysilicon films made by Low Pressure Chemical Vapor Deposition (LPCVD) at different deposition pressures and temperatures are reported. The stress behavior of phosphorus (P)-ion implanted/annealed polysilicon films is also reported. Within the temperature range of deposition, 580 °C to 650 °C, the stress vs deposition temperature plot exhibits a transition region in which the stress of the film changes from highly compressive to highly tensile and back to highly compressive as the deposition temperature increases. This behavior was observed in films that were made by the LPCVD process at reduced pressures of 210 and 320 mTORR. At deposition temperatures below 590 °C the deposit is predominantly amorphous, and the film is highly compressive; at temperatures above 610 °C (110) oriented polycrystalline silicon is formed exhibiting high compressive residual stress.


2012 ◽  
Vol 345 ◽  
pp. 012046 ◽  
Author(s):  
A Abduev ◽  
A Akhmedov ◽  
A Asvarov ◽  
A Omaev
Keyword(s):  

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