Study of Concentration-depth Profiles of the Titanium and Nitrogen Ions by SRIM/TRIM Simulation

In this research, the concentration-depth profiles reached by titanium and nitrogen particles, on the surface of AISI/SAE 1020 carbon steel substrates, by using of ion implantation technique, are studied. The ions are surface deposited by means of high voltage pulsed discharges and electric arc discharge under high vacuum conditions. The concentration and position distribution of the metallic and non-metallic species are obtained by simulation of the interaction of ions with the matter, stopping and ranges of ions in the matter, by the computer program transport of ions in matter. The implantation dose is calculated from the discharge data and the previously established study parameters in this work. From the simulation results, the depth profiles demonstrated that titanium and nitrogen ions may reach up to 300 Å and 600 Å and concentrations of 1.478 x 1016 ions⁄cm2 and 2.127 x 1016 ions⁄cm2, respectively. The formation of titanium microdroplets upon the surface of the substrates is identified from the micrographs obtained by the scanning electron microscopy technique; furthermore, the presence of titanium and nitrogen implanted on the surface of the substrate is verified through the elemental composition analysis by the energy dispersive spectroscopy, validating the effect of ion implantation on ferrous alloys.

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Applied-Information Technology in Concentration Depth Profile of Multi-Charged Mo Ion Implantation

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.662.115 ◽

2014 ◽

Vol 662 ◽

pp. 115-118

Author(s):

Jian Hua Yang ◽

Xing Jian Ma

Keyword(s):

Monte Carlo ◽

Ion Implantation ◽

Depth Profile ◽

High Dose ◽

H13 Steel ◽

Depth Profiles ◽

Concentration Depth Profile ◽

Charged Ions ◽

Concentration Depth Profiles ◽

Better Than

Monte Carlo computer simulations based on the binary collision approximation, TRIDYN program, have been applied to calculate the concentration depth profiles of implanted multi-charged molybdenum ions in H13 steel. The sputtering effect of a high dose ion implantation and influence of multi-charged ions on the concentration depth profile of implanted molybdenum ions can both be considered in the TRIDYN simulation. For the Monte Carlo computer simulation, the chosen pseudo-projectiles are 500000. The chosen extraction voltages are 48kV and 25kV, respectively, and an implantation doses of 5×1017cm-2 to compare the results which have been published related to molybdenum ion implantation. TRIDYN program is better than SRIM program in the calculation of the concentration depth profiles of implanted multi-charged ions. And the calculation result of the TRIDYN program is different from the experiment result. The other factors of affecting the concentration depth profile have also been discussed finally.

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Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

Laser and Particle Beams ◽

10.1017/s0263034616000860 ◽

2016 ◽

Vol 35 (1) ◽

pp. 72-80 ◽

Cited By ~ 4

Author(s):

M. Cutroneo ◽

A. Mackova ◽

L. Torrisi ◽

V. Lavrentiev

Keyword(s):

Ion Implantation ◽

Nuclear Physics ◽

Physics Institute ◽

Laser Repetition Rate ◽

Depth Profiles ◽

The University ◽

Ion Species ◽

Concentration Depth Profiles ◽

Nuclear Physics Institute

AbstractThis work reports a comparative study of laser ion implantation mainly performed at the Nuclear Physics Institute in Rez (Czech Republic), National Institute of Nuclear Physics (Italy), and the Plasma Physics Laboratory at the University of Messina (Italy) using different approaches. Thick metallic targets were irradiated in vacuum by a focused laser beam to generate plasma-producing multi-energy and multi-species ions. A post-acceleration system was employed in order to increase the energy of the produced ions and to generate ion beams suitable to be implanted in different substrates. The ion dose was controlled by the laser repetition rate and the time of irradiation. Rutherford backscattering analysis was carried out to evaluate the integral amount of implanted ion species, the concentration–depth profiles, the ion penetration depth, and the uniformity of depth profiles for ions laser implanted into monocrystalline substrates. The laser implantation under normal conditions and in post-acceleration configuration will be discussed on the basis of the characterization of the implanted substrates.

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Effect of oxygen on nanoscale indentation-induced phase transformations in amorphous silicon

MRS Proceedings ◽

10.1557/proc-1185-ii02-07 ◽

2009 ◽

Vol 1185 ◽

Cited By ~ 1

Author(s):

Simon Ruffell ◽

Jim Williams

Keyword(s):

High Pressure ◽

Ion Implantation ◽

Phase Transformations ◽

Amorphous Silicon ◽

Solid Phase ◽

Solid Phase Crystallization ◽

Crystalline Phases ◽

Depth Profiles ◽

Effect Of Oxygen ◽

Concentration Depth Profiles

AbstractIon-implantation has been used to introduce oxygen concentration-depth profiles into nominally oxygen-free amorphous silicon (a-Si). The effect of O concentrations in excess of 1018 cm−3 on the formation of high pressure crystalline phases (Si-III and Si-XII) during indentation unloading has been studied. By examination of unloading curves and post-indent Raman micro-spectroscopy O is found to inhibit the so-called pop-out event during unloading and, therefore, the formation of the crystalline phases. Furthermore, at high O concentrations (> 1021 cm−3) the formation of these phases is reduced significantly such that under indentation conditions used here the probability of forming the phases is reduced to almost zero. We suggest that the bonding of O with Si reduces the formation of Si-III/XII during unloading through a similar mechanism to that of oxygen-retarded solid phase crystallization of a-Si.

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Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

MRS Proceedings ◽

10.1557/proc-90-397 ◽

1986 ◽

Vol 90 ◽

Cited By ~ 6

Author(s):

Debra L. Kaiser ◽

Piotr Becla

Keyword(s):

Carrier Concentration ◽

Vapor Phase ◽

Infrared Detector ◽

Vapor Phase Epitaxy ◽

Diffusion Method ◽

Depth Profiles ◽

Growth Properties ◽

Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

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Concentration Depth Profiles of Microplastic Particles in River Flow and Implications for Surface Sampling

Environmental Science & Technology ◽

10.1021/acs.est.1c01768 ◽

2021 ◽

Vol 55 (9) ◽

pp. 6032-6041

Author(s):

Win Cowger ◽

Andrew B. Gray ◽

James J. Guilinger ◽

Brandon Fong ◽

Kryss Waldschläger

Keyword(s):

River Flow ◽

Surface Sampling ◽

Depth Profiles ◽

Concentration Depth Profiles

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Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.565 ◽

2009 ◽

Vol 615-617 ◽

pp. 565-568 ◽

Cited By ~ 1

Author(s):

Alexander A. Lebedev ◽

A.E. Belyaev ◽

N.S. Boltovets ◽

V.N. Ivanov ◽

Raisa V. Konakova ◽

...

Keyword(s):

Silicon Carbide ◽

Phase Composition ◽

Heat Resistance ◽

Contact Structure ◽

Schottky Barriers ◽

Electrophysical Properties ◽

Depth Profiles ◽

Contact Metallization ◽

Before And After ◽

Concentration Depth Profiles

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

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Assessment of biofilm changes and concentration-depth profiles during arsenopyrite oxidation by Acidithiobacillus thiooxidans

Environmental Science and Pollution Research ◽

10.1007/s11356-017-9619-8 ◽

2017 ◽

Vol 24 (24) ◽

pp. 20082-20092 ◽

Cited By ~ 6

Author(s):

Hugo Ramírez-Aldaba ◽

Jorge Vazquez-Arenas ◽

Fabiola S. Sosa-Rodríguez ◽

Donato Valdez-Pérez ◽

Estela Ruiz-Baca ◽

...

Keyword(s):

Acidithiobacillus Thiooxidans ◽

Depth Profiles ◽

Concentration Depth Profiles

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Optical properties of surface modified polypropylene by plasma immersion ion implantation technique

Applied Physics Letters ◽

10.1063/1.3481417 ◽

2010 ◽

Vol 97 (8) ◽

pp. 081908 ◽

Cited By ~ 12

Author(s):

Sk. Faruque Ahmed ◽

Myoung-Woon Moon ◽

Chansoo Kim ◽

Yong-Jun Jang ◽

Seonghee Han ◽

...

Keyword(s):

Optical Properties ◽

Ion Implantation ◽

Implantation Technique ◽

Plasma Immersion Ion Implantation ◽

Surface Modified

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Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

MRS Proceedings ◽

10.1557/proc-716-b7.5 ◽

2002 ◽

Vol 716 ◽

Cited By ~ 4

Author(s):

Takaaki Amada ◽

Nobuhide Maeda ◽

Kentaro Shibahara

Keyword(s):

Ion Implantation ◽

Work Function ◽

Nitrogen Concentration ◽

Implantation Dose ◽

Control Technique ◽

High Dose ◽

Implantation Energy ◽

20 Nm ◽

Large Work ◽

Gate Work Function

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

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Parameters for Nitrogen Diffusion in Ni, Ti, and Al Obtained from Implanted Bilayers

MRS Proceedings ◽

10.1557/proc-279-485 ◽

1992 ◽

Vol 279 ◽

Author(s):

K. K. Bourdelle ◽

D. O. Boerma

Keyword(s):

Nuclear Reaction ◽

Room Temperature ◽

Vacuum Annealing ◽

Nitride Layer ◽

Nuclear Reaction Analysis ◽

Nitrogen Diffusion ◽

Depth Profiles ◽

Solid Interface ◽

Before And After ◽

Concentration Depth Profiles

ABSTRACTNi foils and samples consisting of bilayers of Ni or Fe on Al, Ti or Si were implanted at room temperature with 15N+ ions to fluences of around 1×l017 N/cm2. The concentration depth profiles of 15N were determined with nuclear reaction analysis before and after vacuum annealing. It was found that the penetrability for N atoms of the surface and the solid/solid interface plays an important role in the N redistribution during implantation or annealing. The formation of a nitride layer or nitride clusters in Ni and Fe was deduced. Parameters for N migration determined for the metals under investigation are discussed in terms of models.

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