Study on Laser-Induced Oxidation of Ti6Al4V Alloy Under Two Different Reactive Atmospheres

2020 ◽  
Vol 8 (1) ◽  
Author(s):  
Wei Zhao ◽  
Guolong Zhao ◽  
Ning He ◽  
Liang Li ◽  
Asif Iqbal
Keyword(s):  
Laser Irradiation ◽  
Oxide Layer ◽  
Laser Fluence ◽  
Oxidation Behavior ◽  
Phase Identification ◽  
Oxidation Reactions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Subsurface Layers

Abstract The oxidation behavior of Ti6Al4V titanium alloy under laser irradiation in atmospheric and oxygen-assisted conditions was studied. A nanosecond-pulsed Yb: glass fiber laser was used. The thickness of oxide layer, microstructure, and phase composition of the material after laser irradiation were investigated. The characterization of the surface and subsurface microstructure, as well as the cross-sectional morphology were performed using scanning electron microscopy (SEM). The phase identification was performed using X-ray diffraction (XRD). The combined effects of accumulated laser fluence and reactive atmosphere on the oxidation behavior of Ti6Al4V were also studied in detail. With an increase in accumulated laser fluence, a porous and easily removable oxide layer gradually formed on the surface, whereas a compact oxide layer was also formed. At high accumulated laser fluence, the thickness of the porous oxide layer increased dramatically, while the change of thickness of compact oxide layer was not obvious. The reactive atmosphere also had a significant influence on the microstructure of the surface and subsurface layers. SEM and XRD results revealed existence of strong oxidation reactions that underwent in the condition of assisted oxygen delivery at a fixed accumulated laser fluence. The oxide layer was composed mainly of anatase and rutile titanium oxides.

scholarly journals Preparation and characterization of polyani-line/polyvinyl alcohol nanocomposite by laser irradiation

2017 ◽  
Vol 6 (4) ◽  
pp. 77
Author(s):  
N A M Shahin ◽  
S Abd El Mongy ◽  
R Kamal ◽  
A B El- Bially ◽  
A A Shabaka ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Relaxation Time ◽  
Polyvinyl Alcohol ◽  
Laser Irradiation ◽  
Imaginary Part ◽  
Electronic Transition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Amorphous Nature

Polyaniline (PANI) - Polyvinyl alcohol (PVA) nanocomposite were prepared using laser irradiation method. X-ray diffraction results showed that, (PANI/PVA) nanocomposite exhibited amorphous nature of polymer. The electronic transition will be studied using Ultraviolet-Visible spectrometer (UV-Vis). The real part of dielectric constant (έ) and imaginary part (ε") were studied. Also, the relaxation time was calculated.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Glass-Forming Ability and Crystallization Kinetics of Hf-Ti-Cu-Ni-Al Bulk Metallic Glass

2012 ◽  
Vol 479-481 ◽  
pp. 1786-1789 ◽  
Author(s):  
Tie Jun Chen
Keyword(s):  
Thermal Stability ◽  
Crystallization Kinetics ◽  
Glass Formation ◽  
Glass Forming Ability ◽  
Ideal Condition ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Cross Sectional ◽  
Glass Forming

Multi-component Hf45.6Cu27.8Ni9.3Ti5Al12.4bulk metallic glasses (BMGs) were prepared successfully by casted into the water-cooled Cu mold. Characterization of the casted Hf45.6Cu27.8Ni9.3Ti5Al12.4rods was carried out by X-ray diffraction. The thermal stability and crystallization kinetics were followed by differential scanning calorimetry. The results show that the alloy Hf45.6Cu27.8Ni9.3Ti5Al12.4had a critical cylindrical rod diameter for glass formation, Dc, of 7 mm and the largest cross-sectional diameter (about 12.4mm) can be obtained in the ideal condition. The critical cooling rate for glass formation is 6.48K/s. The Hf45.6Cu27.8Ni9.3Ti5Al12.4BMG has larger glass forming ability and higher thermal stability.

EM of hot-dip zinc-iron (galvannealed) coatings

1990 ◽  
Vol 48 (4) ◽  
pp. 1036-1037
Author(s):  
J.D.L 'Ecuyer ◽  
M. Gagné ◽  
C.C. Cheng ◽  
G.L. 'Espérance
Keyword(s):  
Automotive Industry ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
Steel Product ◽  
X Ray ◽  
Steel Sheets ◽  
Coating Microstructure ◽  
The Individual ◽  
Zinc Coatings

Galvannealed coatings have superior weldability and paintability characteristics than conventional zinc coatings. As a result, the market for galvannealed steel sheets is steadily increasing especially in the automotive industry. The formation of the brittle intermetallic Zn-Fe phases, Γ, Γ1, δ, and Z also affects the for- mability properties of the coated steel product. In order to minimize powdering and flaking, the microstructure of the coating must be closely controlled.The characterization of the galvannealed coating microstructure is essential but has proven to be quite difficult. The individual phases cannot be resolved using optical microscopy. X-ray diffraction appears promising, however some of the intermetallic phases are too thin to produce a detectable signal. Electrochemical stripping has been used, but phase identification is ambiguous. Direct observation of the phases using electron microscopy appears to be the best method for characterizing these coatings.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

Single Crystal Gallium Nitride on Silicon Using SiC as an Intermediate Layer

1997 ◽  
Vol 482 ◽  
Author(s):  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Rocking Curve ◽  
Intermediate Layers ◽  
Transmission Electron ◽  
Single Source Precursor ◽  
Supersonic Jet Epitaxy

AbstractGaN films have been grown atop SiC intermediate layers on Si(001) and Si(111) substrates using supersonic jet epitaxy (SJE). GaN growth temperatures ranged between 600 °C and 775 °C. Methylsilane (H3SiCH3) was used as the single source precursor for SiC growth and triethylgallium (TEG) and ammonia (NH 3) were the sources for GaN epitaxy. The GaN growth rate was found to depend strongly on substrate orientation, growth temperature, and flux. Structural characterization of the films was done by transmission electron diffraction (TED) and x-ray diffraction (XRD). Growth of GaN on SiC(002) produces a cubic or mixed phase of cubic and wurtzite depending on growth conditions. Growth on SiC(111) produces predominantly wurtzite GaN(0002). Minimum rocking curve widths for GaN(0002) on SiC/Si(111) and GaN(002) on SiC/Si(001) are 0.6° and 1.5°, respectively. Cross Sectional Transmission Electron Microscopy (XTEM) was also performed.

Preparation and Characterization of Kenaf and Oil Palm Nanocellulose by Acid Hydrolysis Method

2020 ◽  
Vol 1010 ◽  
pp. 495-500
Author(s):  
Nurfarah Aini Mocktar ◽  
Mohammad Khairul Azhar Abdul Razab ◽  
An'amt Mohamed Noor ◽  
Nor Hakimin Abdullah
Keyword(s):  
Surface Morphology ◽  
Acid Hydrolysis ◽  
Oil Palm ◽  
Crystallinity Index ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hydrolysis Method ◽  
High Degree

Acid hydrolysis method become one of the attention among researcher to produce high degree nanocellulose. Integration of sonication process was used to stir and mix particles in an element for different stages. This paper revealed the surface morphology and crystallinity index of two organic plant that were kenaf and oil palm nanocellulose. Characterization of the nanocellulose were identified by 2 techniques; (1) field emission scanning electron microscope (FESEM) that provides surface morphology and elemental information of the element, (2) x-ray diffraction (XRD) for phase identification of materials crystallinity. The result showed that the properties of nanocellulose increase after sonication method have been integrated.

EBSD Analysis of SmCoFeCuZr Alloys

2016 ◽  
Vol 869 ◽  
pp. 608-613
Author(s):  
Sergio Antonio Romero ◽  
Christien G. Hauegen ◽  
Fernando J.G. Landgraf ◽  
Marcos Flavio de Campos
Keyword(s):  
Texture Analysis ◽  
Crystalline Structure ◽  
Ebsd Analysis ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
Complementary Technique ◽  
X Ray ◽  
Kikuchi Lines

In the present study, EBSD was used for the characterization of alloys used for production of SmFeCoCuZr magnets. EBSD is adequate for texture analysis, but may give misleading results for phase identification. EBSD is not suitable for identifying phases with very similar crystalline structure, especially when the phases are crystallographically coherent, due to the superposition of Kikuchi lines. As consequence, for phase identification EBSD should be considered a complementary technique to other methods, as for example x-ray diffraction (XRD).

Preparation and characterization of a novel solid solution of aluminum in tungsten carbide by mechanically activated high-temperature reaction

2006 ◽  
Vol 21 (7) ◽  
pp. 1700-1703 ◽  
Author(s):  
Junmin Yan ◽  
Xianfeng Ma ◽  
Wei Zhao ◽  
Huaguo Tang ◽  
Changjun Zhu ◽  
...  
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Substitutional Solid Solution ◽  
Phase Identification ◽  
Temperature Reaction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Parameters ◽  
High Temperature Reaction

In this work, a novel substitutional solid solution (W0.8Al0.2)C was synthesized by mechanically activated high-temperature reaction. X-ray diffraction was used for phase identification during the whole reaction process. Environment scanning electronic microscopy–field emission gun and energy dispersive x-ray were used to investigate the microstructure and the quantitative material composition of the specimen. (W0.8Al0.2)C was found to crystallize in the WC-type, and the cell parameters were a = 2.907(1) Å and c = 2.837(1) Å. The hardness of (W0.8Al0.2)C was tested to be 19.3 ± 1 GPa, and the density was 13.19 ± 0.05 g cm−3.

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