Single Crystal Gallium Nitride on Silicon Using SiC as an Intermediate Layer

1997 ◽  
Vol 482 ◽  
Author(s):  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Rocking Curve ◽  
Intermediate Layers ◽  
Transmission Electron ◽  
Single Source Precursor ◽  
Supersonic Jet Epitaxy

AbstractGaN films have been grown atop SiC intermediate layers on Si(001) and Si(111) substrates using supersonic jet epitaxy (SJE). GaN growth temperatures ranged between 600 °C and 775 °C. Methylsilane (H3SiCH3) was used as the single source precursor for SiC growth and triethylgallium (TEG) and ammonia (NH 3) were the sources for GaN epitaxy. The GaN growth rate was found to depend strongly on substrate orientation, growth temperature, and flux. Structural characterization of the films was done by transmission electron diffraction (TED) and x-ray diffraction (XRD). Growth of GaN on SiC(002) produces a cubic or mixed phase of cubic and wurtzite depending on growth conditions. Growth on SiC(111) produces predominantly wurtzite GaN(0002). Minimum rocking curve widths for GaN(0002) on SiC/Si(111) and GaN(002) on SiC/Si(001) are 0.6° and 1.5°, respectively. Cross Sectional Transmission Electron Microscopy (XTEM) was also performed.

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 43-49 ◽  
Author(s):  
Peter Zaumseil ◽  
Yuji Yamamoto ◽  
Joachim Bauer ◽  
Markus Andreas Schubert ◽  
Jana Matejova ◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Growth Conditions ◽  
Structural Defects ◽  
Misfit Dislocations ◽  
Strain Partitioning ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
Periodic Arrays ◽  
Transmission Electron

Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.

New Pathways to Heteroepitaxial GaN by Inorganic CVD Synthesis and Characterization of Related Ga-C-N Novel Systems

1996 ◽  
Vol 449 ◽  
Author(s):  
J. Kouvetakis ◽  
M. O’Keeffe ◽  
Louis Brouseau ◽  
J. McMurran ◽  
Darrick Williams ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Columnar Growth ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Single Source Precursor ◽  
Cvd Synthesis ◽  
Oriented Films ◽  
Cubic Structure

ABSTRACTWe describe the development of a new deposition method for thin oriented films of GaN on basal plane sapphire using an exclusively inorganic single-source precursor free of carbon and hydrogen, Cl2GaN3. The films have been characterized by Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (TEM) for composition morphology and structure. RBS analysis confirmed stoichiometric GaN and TEM observations of the highly conformal films revealed heteroepitaxial columnar growth of crystalline wurrtzite material on sapphire. Auger and RBS oxygen and carbon resonance profiles indicated that the films were pure and highly homogeneous. We also report the reactions of Cl2GaN3 with organometallic nitriles to yield a crystalline, novel gallium carbon nitride of composition GaC3N3. Quantitative X-ray powder diffraction has been used to refine the cubic structure of this material which consists of Ga atoms octahedrally surrounded by on the average three C and three N atoms. The structurally analogous LiGaC4N4 phase has also been prepared and characterized.

Synthesis and Characterization of A Metastable (SiC)aN4 Phase

1994 ◽  
Vol 354 ◽  
Author(s):  
C. Uslu ◽  
B. Park ◽  
D. B. Poker
Keyword(s):  
Cubic Phase ◽  
High Dose ◽  
Sensitive Detector ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Position Sensitive ◽  
New Phase

AbstractA metastable C-Si-N compound has been synthesized by high dose N+ implantation into polycrystalline /8-SiC (cubic phase). The thin films formed upon 100 keV implantations were characterized with respect to various ion doses and target temperatures. X-ray diffraction with a position-sensitive detector and cross-sectional transmission electron microscopy revealed that the as-implanted surfaces contained ∼0.15 jttm thick continuously-buried amorphous layers. Rutherford backscattering spectroscopy showed that the peak concentration of nitrogen saturated up to approximately 54 at. % with increasing doses, suggesting a new phase formation.

Deposition and characterization of crystalline conductive RuO2 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2401-2403 ◽  
Author(s):  
Q.X. Jia ◽  
S.G. Song ◽  
S.R. Foltyn ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Residual Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity

Highly conductive metal-oxide RuO2 thin films have been successfully grown on yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. Epitaxial growth of RuO2 thin films on YSZ and the atomically sharp interface between the RuO2 and the YSZ substrate are clearly evident from cross-sectional transmission electron microscopy. A diagonal-type epitaxy of RuO2 on YSZ is confirmed from x-ray diffraction measurements. The crystalline RuO2 thin films, deposited at temperatures in the range of 500 °C to 700 °C, have a room-temperature resistivity of 35 ± 2 μω-cm, and the residual resistance ratio (R300 k/R4.2 k) is around 5 for the crystalline RuO2 thin films.

Growth of Cubic SiC Thin Films on Silicon from Single Source Precursors by Supersonic Jet Epitaxy

1996 ◽  
Vol 441 ◽  
Author(s):  
Jin-Hyo Boo ◽  
Scott A. Ustin ◽  
Wilson Ho ◽  
H. Paul Maruska ◽  
Peter E. Norris ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Supersonic Jet ◽  
Silicon On Insulator ◽  
X Ray Diffraction ◽  
Molecular Precursors ◽  
Transmission Electron ◽  
Supersonic Jet Epitaxy ◽  
Soi Substrates

AbstractCubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780 - 1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates

1991 ◽  
Vol 220 ◽  
Author(s):  
P. M. Adams ◽  
R. C. Bowman ◽  
V. Arbet-Engols ◽  
K. L. Wang ◽  
C. C. Ahn
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Substrate Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

Orientation Dependence of CdTe/Si Grown by MBE

1995 ◽  
Vol 399 ◽  
Author(s):  
L. A. Almeida ◽  
Y. P. Chen ◽  
J. P. Faurie ◽  
David J. Smith ◽  
S.-C. Y. Tsen ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Orientation Dependence ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Substrate Preparation ◽  
Double Crystal ◽  
Interface Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Transmission Electron

ABSTRACTIn this study CdTe (111)B was grown by molecular beam epitaxy on vicinal Si(001) substrates, with a variety of substrate tilt angles (θ), and tilt directions (φ) relative to [110]. Layer quality, and content of double-domain and microtwin defects were evaluated by double crystal rocking curve (DCRC) full width at half maximum (FWHM) and x-ray diffraction, respectively. Transmission electron microscopy (TEM) was used to study interface quality and the nature of structural defects as a function of epilayer thickness. In the present investigation, substrate preparation and growth conditions, particularly initiation conditions, are correlated with Si (001) tilt. It has been found that oxide desorption processes can depend strongly on θ, especially for larger values of θ (> 4°). Currently, we routinely produce single domain, twin-free CdTe(111)B epilayers on vicinal Si (001) substrates.

KINETICS, MICROSTRUCTURE AND STRAIN IN GaN THIN FILMS GROWN VIA PENDEO-EPITAXY

2004 ◽  
Vol 14 (01) ◽  
pp. 21-37
Author(s):  
A. M. ROSKOWSKI ◽  
E. A. PREBLE ◽  
S. EINFELDT ◽  
P. M. MIRAGLIA ◽  
J. SCHUCK ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Growth Conditions ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Microelectronic Devices ◽  
Atomic Force ◽  
Transmission Electron ◽  
Thermal Stability Of

Maskless pendeo-epitaxy involves the lateral and vertical growth of cantilevered "wings" of material from the sidewalls of unmasked etched forms. Gallium Nitride films grown at 1020°C via metalorganic vapor phase epitaxy on GaN / AlN /6 H - SiC (0001) substrates previously etched to form [Formula: see text]-oriented stripes exhibited similar vertical [0001] and lateral [Formula: see text] growth rates, as shown by cross-sectional scanning electron microscopy. Increasing the temperature increased the growth rate in the latter direction due to the higher thermal stability of the [Formula: see text] surface. The [Formula: see text] surface was atomically smooth under all growth conditions with a root mean square (RMS)=0.17 nm. High resolution X-ray diffraction and atomic force microscopy of the pendeo-epitaxial films confirmed transmission electron microscopy results regarding the significant reduction in dislocation density in the wings. This result is important for the properties of both optoelectronic and microelectronic devices fabricated in III-Nitride structures. Measurement of strain indicated that the wing material is crystallographically relaxed as evidenced by the increase in the c-axis lattice parameter and the upward shift of the E2 Raman line frequency. A strong D°X peak at 3.466 eV was also measured in the wing material. However, tilting of the wings of ≤0.15° occurred due to the tensile stresses in the stripes induced by the mismatch in the coefficients of thermal expansion between the GaN and the underlying substrate.

A Study of Low-Temperature Grown Gap by Gas-Source Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
W. G. Bi ◽  
X. B. Mei ◽  
K. L. Kavanagh ◽  
C. W. Tu ◽  
E. A. Stach ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Cross Sectional ◽  
Rocking Curve ◽  
Gas Source ◽  
Transmission Electron ◽  
Lt Gaas

AbstractWe report the effects of growth conditions on the strain and crystalline quality of lowtemperature (LT) grown GaP films by gas-source molecular beam epitaxy. At temperatures below 160 °C, poly-crystalline GaP films are always obtained, regardless of the PH3 low rate used, while at temperatures above 160 °C, the material quality is affected by the PH3 flow rate. Contrary to compressively strained LT GaAs, high-resolution X-ray rocking curve measurement indicates a tensile strain of the LT GaP films, which is considered to be due to PGa antisite defects. The strain is found to be affected by the PH3 flow rate, the growth temperature, and post-growth annealing. Contrary to LT GaAs, no P precipitates are observed in cross-sectional transmission electron microscopy.

Sign in / Sign up

Export Citation Format

Share Document